髙木　信一 (タカギ　シンイチ)

研究者情報

所属

• 先端総合研究機構 特任教授

URL

https://jglobal.jst.go.jp/detail?JGLOBAL_ID=202001014641086727

科研費研究者番号

• 30372402

ORCID ID

•  https://orcid.org/0000-0002-5601-2604

J-Global ID

• 202001014641086727

研究キーワード

• 半導体デバイス   

研究分野

• ナノテク・材料 / ナノ構造物理 / 半導体物性工学
• ものづくり技術（機械・電気電子・化学工学） / 電気電子材料工学 / 半導体材料
• ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 / 半導体デバイス

経歴

• 2025年06月 - 現在  東京大学名誉教授
• 2025年04月 - 現在  帝京大学先端総合研究機構特任教授
• 2007年04月 - 2025年03月  東京大学大学院工学系研究科 電気系工学専攻教授
• 2001年08月 - 2008年03月  半導体MIRAIプロジェクト新構造トランジスタ及び計測解析グループグループリーダー
• 2004年04月 - 2007年03月  東京大学大学院 新領域創成科学研究科 基盤科学研究系 基盤情報学専攻教授
• 2003年10月 - 2004年03月  東京大学大学院 工学系研究科 電子工学専攻教授
• 2003年04月 - 2003年09月  東芝研究開発センター LSI基盤技術ラボラトリー研究主幹
• 1998年07月 - 2003年03月  東芝研究開発センター 先端半導体デバイス研究所主任研究員
• 1991年07月 - 1998年06月  東芝研究開発センター ULSI研究所研究主務
• 1993年08月 - 1995年03月  Stanford大学訪問研究員
• 1987年04月 - 1991年06月  東芝総合研究所 超LSI研究所研究員

学歴

• 1984年04月 - 1987年03月   東京大学   大学院工学系研究科   電子工学専門課程 博士課程
• 1982年04月 - 1984年03月   東京大学   大学院工学系研究科   電子工学専門課程 修士課程
• 1978年04月 - 1982年03月   東京大学   工学部   電子工学科

所属学協会

• 電子情報通信学会   IEEE   応用物理学会   

研究活動情報

論文

• Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing

  Yu Ukezeki; Sota Inoue; Norifumi Fujimura; Tokuji Yokomatsu; Kensuke Kanda; Kazusuke Maenaka; Kasidit Toprasertpong; Shinichi Takagi; Takeshi Yoshimura

  Applied Physics Express 18 8 081001 - 081001 2025年08月 [査読有り]
  
• Low-loss Sb2S3 optical phase shifter enabled by optimizing sputtering conditions

  Yuto Miyatake; Tomohiro Anda; Yosuke Wakita; Kotaro Makino; Shogo Hatayama; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express 15 8 1972 - 1986 2025年07月 [査読有り]
  
• Waveguide-multiplexed photonic matrix–vector multiplication processor using multiport photodetectors

  Rui Tang; Makoto Okano; Chao Zhang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optica 12 6 812 - 820 2025年06月 [査読有り]
  
• Voltage-mode reservoir computing with ferroelectric CMOS inverters

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Express 18 6 061002 - 061002 2025年06月 [査読有り]
  
• Scalable intensity-based photonic matrix-vector multiplication processor using single-wavelength time-division-multiplexed signals

  Chengli Chai; Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Letters 50 11 3656 - 3656 2025年05月 [査読有り]
  
• Prospects and challenges of HfO2-based ferroelectric devices

  Shinichi Takagi; Mitsuru Takenaka; Kasidit Toprasertpong

  Science China Information Sciences 68 6 160407 - 160407 2025年05月 [査読有り][招待有り]
  
• Ultra-low-power cryogenic complementary metal oxide semiconductor technology

  Qing-Tai Zhao; Yi Han; Hung-Chi Han; Lars R. Schreiber; Tsung-En Lee; Hung-Li Chiang; Iuliana Radu; Christian Enz; Detlev Grützmacher; Christoph Stampfer; Shinichi Takagi; Joachim Knoch

  Nature Reviews Electrical Engineering 2 4 277 - 290 2025年04月 [査読有り]
  
• Polarization current-based reservoir computing utilizing an anti-ferroelectric-like HfZrO2 capacitor

  Shin-Yi Min; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  APL Machine Learning 3 1 2025年03月 [査読有り]
  
• Accurate evaluation of effective mobility in Si MOSFETs at cryogenic temperatures using the quasi-static C–V method

  Yutong Chen; Zhao Jin; Xueyang Han; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 64 3 03SP29 - 03SP29 2025年03月 [査読有り]
  
• Voltage-operating reservoir computing utilizing ferroelectric-FET source follower configurations

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 64 2 02SP40 - 02SP40 2025年02月 [査読有り]
  
• Unipolar polarization switching and high-endurance memory operation of HZO/Si anti-ferroelectric FETs

  Shin-Yi Min; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 64 2 02SP36 - 02SP36 2025年02月 [査読有り]
  
• A novel measurement method to evaluate relationship between threshold voltage and polarization for understanding memory operation of ferroelectric field-effect transistors

  Seong-Kun Cho; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 64 2 02SP12 - 02SP12 2025年02月 [査読有り]
  
• A correction method of split C–V characteristics based on transmission line model for accurate evaluation of surface carrier concentration and effective mobility in MOSFETs

  Zhao Jin; Yutong Chen; Xueyang Han; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 64 1 01SP16 - 01SP16 2025年01月 [査読有り]
  
• Recovery Strategy of Fatigue-Limited Endurance in Si FeFETs With Thin HfZrO₂ Films

  Zuocheng Cai; Zhenhong Liu; Yan-Kui Liang; Xueyang Han; Shin-Yi Min; Eishin Nako; Seong-Kun Cho; Chia-Tsong Chen; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  IEEE Transactions on Electron Devices 72 1 467 - 473 2025年01月 [査読有り]
  
• Compact, low-loss, and broadband 2 × 2 Si optical coupler designed by covariance matrix adaptation evolution strategy

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics 63 12 12SP16 - 12SP16 2024年12月 [査読有り]
  
• Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures

  Min-Soo Kang; Kasidit Toprasertpong; Hiroshi Oka; Takahiro Mori; Mitsuru Takenaka; Shinichi Takagi

  Journal of Applied Physics 136 19 195702 - 195702 2024年11月 [査読有り]
  
• Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

  Tomohiro Akazawa; Stéphane Monfray; Frédéric Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics letters 49 20 5882 - 5885 2024年10月 [査読有り]
  
• (Invited) Mobility Enhancement Technology of Extremely-Thin Body Ge-on-Insulator Channel Mosfets

  Shinichi Takagi; Xueyang Han; Chia-Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions 114 2 3 - 14 2024年09月 [査読有り][招待有り]
  
• Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer

  Yan-Kui Liang; Wei-Li Li; Yu-Lon Lin; Dong-Ru Hsieh; Tsung-Ying Yang; Tsung-Te Chou; Chi-Chung Kei; Huai-Ying Huang; Yu-Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun-Hsiung Lin

  IEEE Transactions on Electron Devices 71 9 5788 - 5791 2024年09月 [査読有り]
  
• Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film

  Zhenhong Liu; Kasidit Toprasertpong; Zuocheng Cai; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Letters 125 7 072904(1) - 072904(6) 2024年08月 [査読有り]
  
• Symmetric silicon microring resonator optical crossbar array for accelerated inference and training in deep learning

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Photonics Research 12 8 1681 - 1688 2024年08月 [査読有り]
  
• Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel

  Yan-Kui Liang; Jun-Yang Zheng; Yu-Lon Lin; Yu-Cheng Lu; Dong-Ru Hsieh; Tsung-Te Chou; Chi-Chung Kei; Huai-Ying Huang; Yu-Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun-Hsiung Lin

  IEEE Transactions on Electron Devices 71 6 3671 - 3677 2024年06月 [査読有り]
  
• Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping

  Zuocheng Cai; Kasidit Toprasertpong; Zhenhong Liu; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 71 6 3633 - 3639 2024年06月 [査読有り]
  
• Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide.

  Kazuma Taki; Naoki Sekine; Kouhei Watanabe; Yuto Miyatake; Tomohiro Akazawa; Hiroya Sakumoto; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Nature communications 15 1 3549 - 3549 2024年05月 [査読有り]
  
• Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

  Hiromi Sawai; Motomu Kurata; Tsutomu Murakawa; Yoshinori Ando; Kunihiro Fukushima; Ryota Eto; Shinya Sasagawa; Kentaro Sugaya; Ryota Hodo; Toshiki Mizuguchi; Yusuke Komura; Hitoshi Kunitake; Shinichi Takagi; Shunpei Yamazaki

  Japanese Journal of Applied Physics 63 5 051003 - 051003 2024年05月 [査読有り]
  
• Co-design of SLC/MLC FeFET-based highly error-tolerant low-power CiM and strong lottery ticket hypothesis-based algorithm

  Kenshin Yamauchi; Ayumu Yamada; Naoko Misawa; Seong-Kun Cho; Kasidit Toprasertpong; Shinichi Takagi; Chihiro Matsui; Ken Takeuchi

  Japanese Journal of Applied Physics 63 4 04SP06 - 04SP06 2024年03月 [査読有り]
  
• Performance improvement in reservoir computing by using HfZrO2 FeFETs through operating voltage optimization

  Shin Yi Min; Kasidit Toprasertpong; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 63 3 03SP19 - 03SP19 2024年03月 [査読有り]
  
• FeFET Local Multiply and Global Accumulate Voltage-Sensing Computation-In-Memory Circuit Design for Neuromorphic Computing

  Chihiro Matsui; Kasidit Toprasertpong; Shinichi Takagi; Ken Takeuchi

  IEEE Transactions on Very Large Scale Integration (VLSI) Systems 32 3 468 - 479 2024年03月 [査読有り]
  
• Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 63 2 02SP47 - 02SP47 2024年02月 [査読有り]
  
• Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

  Hiroya Sakumoto; Taketoshi Nakayama; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics 63 2 02SP52 - 02SP52 2024年02月 [査読有り]
  
• Add-Drop Microring Resonator Switch with Positive/Negative Phase Tuning Using InGaAsP/Si Hybrid MOS Phase Shifter

  Yosuke Wakita; Rui Tang; Hanzhi Tang; Shuhei Ohno; Tomohiro Akazawa; Yuto Miyatake; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 12 4289 - 4295 2024年 [査読有り]
  
• Transparent In-Line Optical Power Monitoring Using InP/Si Hybrid Waveguide Phototransistor

  Tomohiro Akazawa; Kei Sumita; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 12 4281 - 4288 2024年 [査読有り]
  
• Demonstration of Wake-Up Free 6 nm Ultrathin ZrO-HfO Superlattice Ferroelectric Capacitors with High Endurance Against Fatigue

  Yan Kui Liang; Zhenhong Liu; Zuocheng Cai; Xueyang Han; Huai Ying Huang; Yu Ming Lin; Edward Yi Chang; Chun Hsiung Lin; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  IEEE Electron Device Letters 45 8 1468 - 1471 2024年 [査読有り]
  
• Photonic Matrix-Vector Multiplication with Low-Insertion-Loss and Non-Volatile Ge2Sb2Te3S2 Intensity Modulators

  Yuto Miyatake; Rui Tang; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 12 4347 - 4354 2024年 [査読有り]
  
• Reservoir Computing Utilizing a Complementary Combination of n- and p-Channel FeFETs

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  IEEE Electron Device Letters 45 10 1768 - 1771 2024年 [査読有り]
  
• Electron Mobility Enhancement of (111)-Oriented Extremely Thin Body Ge-on-Insulator nMOSFETs by Flipped Smart-Cut Substrates

  Xueyang Han; Chia Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 71 9 5198 - 5204 2024年 [査読有り]
  
• Design of compact and low-loss S-bends by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 31 26 43850 - 43863 2023年12月 [査読有り]
  
• Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode

  Tipat Piyapatarakul; Hanzhi Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics 62 SC sc1008 - sc1008 2023年12月 [査読有り]
  
• Reservoir Computing System With HZO/Si FeFETs in Parallel Configuration: Experimental Demonstration of Speech Classification

  Eishin Nako; Kasidit Toprasertpong; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 70 11 5657 - 5664 2023年11月 [査読有り]
  
• Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

  Rui Tang; Kouhei Watanabe; Masahiro Fujita; Hanzhi Tang; Tomohiro Akazawa; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Laser & Photonics Reviews 17 11 2300279(1) - 2300279(9) 2023年10月 [査読有り]
  
• (Invited) Physical Understanding of HfZrO2/Si FeFET Memory and Its AI Applications

  Shinichi Takagi; Kasidit Toprasertpong; Zuocheng Cai; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka

  ECS Transactions 112 1 65 - 74 2023年09月 [査読有り][招待有り]
  
• Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon-Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy

  Yuiha Maeda; Ryo Yokogawa; Sho Sugawa; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi; Atsushi Ogura

  ECS Transactions 112 1 37 - 43 2023年09月 [査読有り]
  
• Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory

  Kasidit Toprasertpong; Chihiro Matsui; Mitsuru Takenaka; Ken Takeuchi; Shinichi Takagi

  Journal of Physics D: Applied Physics 56 46 465103 - 465103 2023年08月 [査読有り]
  
• The future transistors

  Wei Cao; Huiming Bu; Maud Vinet; Min Cao; Shinichi Takagi; Sungwoo Hwang; Tahir Ghani; Kaustav Banerjee

  Nature 620 7974 501 - 515 2023年08月 [査読有り]
  
• Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on- Insulator (SGOI) pMOSFETs

  Chia Tsong Chen; Xueyang Han; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 70 7 3963 - 3969 2023年07月 [査読有り]
  
• Write Variation & Reliability Error Compensation by Layer-wise Tunable Retraining of Edge FeFET LM-GA CiM

  Shinsei Yoshikiyo; Naoko Misawa; Kasidit Toprasertpong; Shinichi Takagi; Chihiro Matsui; Ken Takeuchi

  IEICE Transactions on Electronics 106-c 7 352 - 364 2023年07月 [査読有り]
  
• Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM

  Kei Sumita; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  AIP Advances 13 5 055310(1) - 055310(6) 2023年05月 [査読有り]
  
• Interpretation of mobility universality against effective electric field of Si nMOSFETs based on nonlinear model of surface roughness scattering

  Kei Sumita; Kasidit Toprasertpong; Mitsuru TAKENAKA; Shinichi TAKAGI

  Applied Physics Express 16 6 064001 - 064001 2023年05月 [査読有り]
  
• Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge₂Sb₂Te₃S₂

  Yuto Miyatake; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE Transactions on Electron Devices 70 4 2106 - 2112 2023年04月 [査読有り]
  
• Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al₂O₃/plasma oxidation GeO _x /(111) and (100) n-Ge MOS structures

  Xueyang Han; Chia-Tsong Chen; Mengnan Ke; Ziqiang Zhao; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 62 {SC} sc1089 - sc1089 2023年03月 [査読有り]
  
• Effect of Hf _x Zr_1−x O₂/Ge metal–ferroelectrics–insulator–semiconductor interfaces on polarization reversal behavior

  Koichiro Iwashige; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 62 {SC} sc1093 - sc1093 2023年03月 [査読有り]
  
• Influence of substrate impurity concentration on sub-threshold swing of Si n-channel MOSFETs at cryogenic temperatures down to 4 K

  Min-Soo Kang; Kei Sumita; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 62 {SC} sc1062 - sc1062 2023年02月 [査読有り]
  
• Accurate evaluation of interface trap density at InAs MOS interfaces by using C-V curves at low temperatures

  Ryohei Yoshizu; Kei Sumita; Kasidit Toprasertpong; Mitsuru TAKENAKA; Shinichi TAKAGI

  Japanese Journal of Applied Physics 62 sc sc1055 - sc1055 2023年01月 [査読有り]
  
• Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs

  Kei Sumita; Min-Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Journal of the Electron Devices Society 11 216 - 229 2023年 [査読有り]
  
• Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths.

  Takaya Ochiai; Tomohiro Akazawa; Yuto Miyatake; Kei Sumita; Shuhei Ohno; Stéphane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Nature communications 13 1 7443(1) - 7443(8) 2022年12月 [査読有り]
  
• Low-Capacitance Ultrathin InGaAs Membrane Photodetector on Si Slot Waveguide Toward Receiverless System

  Tomohiro Akazawa; Dongrui Wu; Kei Sumita; Naoki Sekine; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE Transactions on Electron Devices 69 12 7184 - 7189 2022年12月 [査読有り]
  
• Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 69 12 7113 - 7119 2022年12月 [査読有り]
  
• Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Frontiers in Electronics 3 1 - 11 2022年12月 [査読有り]
  
• Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

  Kasidit Toprasertpong; Kento Tahara; Yukinobu Hikosaka; Ko Nakamura; Hitoshi Saito; Mitsuru Takenaka; Shinichi Takagi

  ACS Applied Materials & Interfaces 14 45 51137 - 51148 2022年11月 [査読有り]
  
• Non-volatile compact optical phase shifter based on Ge₂Sb₂Te₅ operating at 2.3 µm

  Yuto Miyatake; Chong Pei Ho; Prakash Pitchappa; Ranjan Singh; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express 12 12 4582 - 4593 2022年11月 [査読有り]
  
• On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics A 128 12 1114 - 1114 2022年11月 [査読有り][招待有り]
  
• (Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era

  Shinichi Takagi; Chia-Tsong Chen; Xueyang Han; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions 109 4 59 - 71 2022年09月 [査読有り][招待有り]
  
• Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits

  Mitsuru Takenaka; Ziqiang Zhao; Chong Pei Ho; Takumi Fujigaki; Tipat Piyapatarakul; Yuto Miyatake; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  ECS Transactions 109 4 47 - 58 2022年09月 [査読有り][招待有り]
  
• Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy

  Ryo Yokogawa; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi; Atsushi Ogura

  ECS Transactions 109 4 351 - 357 2022年09月 [査読有り]
  
• Two-layer integrated photonic architectures with multiport photodetectors for high-fidelity and energy-efficient matrix multiplications

  Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Dirk Englund; Mitsuru Takenaka

  Optics Express 30 19 33940 - 33954 2022年09月 [査読有り]
  
• Reservoir computing on a silicon platform with a ferroelectric field-effect transistor

  Kasidit Toprasertpong; Eishin Nako; Zeyu Wang; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  Communications Engineering 1 1 21 - 21 2022年08月 [査読有り]
  
• Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

  Shuhei Ohno; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  ACS Photonics 9 8 2614 - 2622 2022年07月 [査読有り]
  
• Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance

  Hanzhi Tang; Qiang Li; Chong Pei Ho; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 30 13 22848 - 22859 2022年06月 [査読有り]
  
• Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

  Naoki Sekine; Kei Sumita; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 30 13 23318 - 23329 2022年06月 [査読有り]
  
• Characterization of interface properties of Al₂O₃/n-GaSb and Al₂O₃/InAs/n-GaSb metal-oxide-semiconductor structures

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 61 6 061010(1) - 061010(12) 2022年05月 [査読有り]
  
• Numerical analysis of optical phase modulator operating at 2 μm wavelength using graphene/III–V hybrid metal-oxide-semiconductor capacitor

  Tipat Piyapatarakul; Hanzhi Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics 61 SC sc1031 - sc1031 2022年05月 [査読有り]
  
• Introduction of high tensile strain into Ge-on-Insulator structures by oxidation and annealing at high temperature

  Xueyang Han; Chia-Tsong Chen; Cheol-Min Lim; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 61 SC sc1027 - sc1027 2022年05月 [査読有り]
  
• Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4–300 K

  Min-Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Hiroshi Oka; Takahiro Mori; Shinichi Takagi

  Japanese Journal of Applied Physics 61 SC sc1032 - sc1032 2022年05月 [査読有り]
  
• Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness Scattering

  Kei Sumita; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 69 4 2115 - 2121 2022年04月 [査読有り]
  
• Effective Mobility Enhancement Through Asymmetric Strain Channels on Extremely Thin Body (100) GOI pMOSFETs

  Chia-Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 69 1 25 - 30 2022年01月
• A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

  Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

  Nanoscale 14 5 2013 - 2022 2022年
• Low-loss Ge waveguide at the 2-µm band on an n-type Ge-on-insulator wafer

  Ziqiang Zhao; Cheol-Min Lim; Chongpei Ho; Kei Sumita; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express 11 12 4097 - 4097 2021年11月
• (Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

  Shinichi Takagi; Kasidit Toprasertpong; Kent Tahara; Eishin Nako; Ryosho Nakane; Zeyu Wang; Xuan Luo; Tsung-En Lee; Mitsuru Takenaka

  ECS Transactions 104 4 17 - 26 2021年10月
• Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

  K. Sumita; K. Toprasertpong; M. Takenaka; S. Takagi

  Applied Physics Letters 119 10 103501 - 103501 2021年09月
• Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces

  Tsung-En Lee; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  AIP Advances 11 8 085021 - 085021 2021年08月
• Antiferroelectric properties of ZrO₂ ultra-thin films prepared by atomic layer deposition

  Xuan Luo; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Letters 118 23 232904 - 232904 2021年06月
• Si Microring Resonator Optical Switch based on Optical Phase Shifter with Ultrathin-InP/Si Hybrid Metal-Oxide-Semiconductor Capacitor

  Shuhei Ohno; Qiang Li; Naoki Sekine; Hanzhi Tang; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 2021年05月
• Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates

  M. Mitsuhara; T. Gotow; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  Journal of Crystal Growth 555 125970 - 125970 2021年02月
• Mobility enhancement techniques for Ge and GeSn MOSFETs

  Ran Cheng; Zhuo Chen; Sicong Yuan; Mitsuru Takenaka; Shinichi Takagi; Genquan Han; Rui Zhang

  Journal of Semiconductors 42 2 2021年02月 [査読有り]
  
• Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Journal of the Electron Devices Society 9 612 - 617 2021年
• Impacts of Equivalent Oxide Thickness Scaling of TiN/Y2O3 Gate Stacks with Trimethylaluminum Treatment on SiGe MOS Interface Properties

  Tsung-En Lee; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Electron Device Letters 1 - 1 2021年
• Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction

  Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 1 - 7 2021年
• High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

  Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

  Communications Materials 1 1 2020年12月
• Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 28 24 35663 - 35673 2020年11月
• Reduction of MOS Interface Defects in TiN/Y2O3/Si0.78Ge0.22 Structures by Trimethylaluminum Treatment

  Tsung-En Lee; Mengnan Ke; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 10 4067 - 4072 2020年10月
• Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

  Kasidit Toprasertpong; Kento Tahara; Taichiro Fukui; Zaoyang Lin; Kouhei Watanabe; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 10 1588 - 1591 2020年10月
• Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

  Kimihiko Kato; Tetsufumi Tanamoto; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 9 3876 - 3882 2020年09月
• Numerical analyses of optical loss and modulation bandwidth of an InP organic hybrid optical modulator

  Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 28 20 29730 - 29739 2020年09月
• Efficient Mid-Infrared Germanium Variable Optical Attenuator Fabricated by Spin-on-Glass Doping

  Ziqiang Zhao; Chong Pei Ho; Qiang Li; Zaoyang Lin; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JOURNAL OF LIGHTWAVE TECHNOLOGY 38 17 4808 - 4816 2020年09月
• Operation of (111) Ge-on-Insulator n-channel MOSFET Fabricated by Smart-Cut Technology (vol 41, pg 985, 2020)

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 8 1266 - 1266 2020年08月
• Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films

  K. Sumita; J. Takeyasu; K. Toprasertpong; M. Takenaka; S. Takagi

  Journal of Applied Physics 128 1 015705 - 015705 2020年07月
• Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration

  Kimihiko Kato; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 13 7 2020年07月
• Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 7 985 - 988 2020年07月
• Diffusion properties of n-type dopants diffused from spin on glass into Ge

  Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 128 1 2020年07月
• Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

  Kasidit Toprasertpong; Kento Tahara; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 116 24 2020年06月
• Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

  Masafumi Yokoyama; Taketsugu Yamamoto; Dae-Hwan Ahn; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 127 22 2020年06月
• Metal-oxide-semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

  Tsung-En Lee; Mengnan Ke; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 127 18 2020年05月
• Tunable Germanium-on-Insulator Band-Stop Optical Filter Using Thermo-Optic Effect

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS JOURNAL 12 2 2020年04月
• p-Channel TFET Operation of Bilayer Structures With Type-II Heterotunneling Junction of Oxide- and Group-IV Semiconductors

  Kimihiko Kato; Kwang-Won Jo; Hiroaki Matsui; Hitoshi Tabata; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 4 1880 - 1886 2020年04月
• Computational design of efficient grating couplers using artificial intelligence

  Yuto Miyatake; Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 2020年04月
• Si microring resonator crossbar arrays for deep learning accelerator

  Shuhei Ohno; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 2020年04月
• Accurate evaluation of specific contact resistivity between InAs/Ni-InAs alloy using a multi-sidewall transmission line method

  Kei Sumita; Kimihiko Kato; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 2020年04月
• Optical Phase Modulators Based on Reverse-Biased III-V/Si Hybrid Metal-Oxide-Semiconductor Capacitors

  Qiang Li; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS TECHNOLOGY LETTERS 32 6 345 - 348 2020年03月
• Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

  Lim, C.-M.; Zhao, Z.; Sumita, K.; Toprasertpong, K.; Takenaka, M.; Takagi, S.

  AIP Advances 10 1 2020年 [査読有り]
  
• Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al2O3 Gate Stack

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 8 1 341 - 345 2020年
• III-V/Si hybrid optical modulators based on MOS capacitor

  Mitsuru Takenaka; Qiang Li; Shuhei Ohno; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi

  INTEGRATED PHOTONICS PLATFORMS: FUNDAMENTAL RESEARCH, MANUFACTURING AND APPLICATIONS 11364 2020年
• SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET

  Tetsufumi Tanamoto; Chika Tanaka; Shinichi Takagi

  IEICE ELECTRONICS EXPRESS 17 6 2020年
• Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 126 21 2019年12月
• Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 66 12 5060 - 5064 2019年12月
• Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

  S.-H. Yoon; K. Kato; C. Yokoyama; D.-H. Ahn; M. Takenaka; S. Takagi

  Journal of Applied Physics 126 18 184501 - 184501 2019年11月
• Group IV Based Bi-Layer Tunneling Field Effect Transistor

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  ECS Transactions 93 1 23 - 27 2019年10月
• (Invited) Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits

  Shinichi Takagi; Kimihiko Kato; Dae-Hwan Ahn; Takahiro Gotow; Ryotaro Takaguchi; Tae-Eon Bae; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions 92 4 59 - 69 2019年07月
• Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks

  T.-E. Lee; K. Kato; M. Ke; K. Toprasertpong; M. Takenaka; S. Takagi

  Microelectronic Engineering 214 87 - 92 2019年06月
• Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 21 2019年06月
• Mid-infrared tunable Vernier filter on a germanium-on-insulator photonic platform

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  OPTICS LETTERS 44 11 2779 - 2782 2019年06月
• Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  AIP ADVANCES 9 5 2019年05月
• ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 19 2019年05月
• Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET

  Dae-Hwan Ahn; Sang-Hee Yoon; Kimihiko Kato; Taiichirou Fukui; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 66 4 1862 - 1867 2019年04月
• Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis

  Kiyoshi Endo; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 2019年04月
• Thermal properties of III-V on a SiC platform for photonic integrated circuits

  Takaaki Sanjoh; Naoki Sekine; Kimihiko Kato; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 2019年04月
• Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature

  Kei Sumita; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 2019年04月
• Numerical analysis of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelength

  Yoshitaka Taguchi; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 2019年04月
• Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators

  Masashi Yamaguchi; Takahiro Gotow; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 2019年04月
• Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  ACS APPLIED ELECTRONIC MATERIALS 1 3 311 - + 2019年03月
• III-V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits

  Mitsuru Takenaka; Jae-Hoon Han; Frederic Boeuf; Jin-Kwon Park; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  JOURNAL OF LIGHTWAVE TECHNOLOGY 37 5 1474 - 1483 2019年03月
• InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 11 2019年03月
• Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

  Kwang-Won Jo; Wu-Kang Kim; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 114 6 2019年02月
• High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform

  Takumi Fujigaki; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 27 5 6451 - 6458 2019年
• Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 1 1201 - 1208 2019年
• Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET

  Po-Chin Huang; Tetsufumi Tanamoto; Masakazu Goto; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 65 12 5511 - 5517 2018年12月
• Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate

  Jian Kang; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 26 23 30546 - 30555 2018年11月
• Tunable Grating Coupler by Thermal Actuation and Thermo-Optic Effect

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS TECHNOLOGY LETTERS 30 17 1503 - 1506 2018年09月
• Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

  Tae-Eon Bae; Kimihiko Kato; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 113 6 2018年08月
• Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

  S. H. Yoon; D. H. Ahn; M. Takenaka; S. Takagi

  Journal of Applied Physics 123 23 2018年06月 [査読有り]
  
• Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

  Tae-Eon Bae; Yuki Wakabayashi; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics

  Jian Kang; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 112 16 2018年04月
• Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

  Takumi Katoh; Ryo Matsumura; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3V operation

  Kentaro Kukita; Tadayoshi Uechi; Junji Shimokawa; Masakazu Goto; Yoshinori Yokota; Shigeru Kawanaka; Tetsufumi Tanamoto; Hiroyoshi Tanimoto; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

  Ryo Matsumura; Takumi Katoh; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• Ge p-channel tunneling FETs with steep phosphorus profile source junctions

  Ryotaro Takaguchi; Ryo Matsumura; Takumi Katoh; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength

  Yuki Yamaguchi; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 2018年04月
• InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform

  Jin-Kown Park; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 26 4 4842 - 4852 2018年02月
• Ultra-low power III-V-based MOSFETs and Tunneling FETs

  Shinichi Takagi; Dae-Hwan Ahn; Takahiro Gotow; Chiaki Yokoyama; Chih-Yu Chang; Kiyoshi Endo; Kimihiko Kato; Mitsuru Takenaka

  ECS Transactions 85 8 27 - 37 2018年
• A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

  Stefan Glass; Kimihiko Kato; Lidia Kibkalo; Jean-Michel Hartmann; Shinichi Takagi; Dan Buca; Siegfried Mantl; Zhao Qing-Tai

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 1 1070 - 1076 2018年
• Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 1 950 - 955 2018年
• Pretreatment Effects on High-k/InxGa1-xAs MOS Interface Properties and Their Physical Model

  Chiaki Yokoyama; Chi-Yu Chang; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 1 487 - 493 2018年
• Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 122 17 2017年11月
• InP-based photonic integrated circuit platform on SiC wafer Mitsuru Takenaka and Shinichi Takagi

  Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 25 24 29993 - 30000 2017年11月
• Preface

  Katsuyoshi Washio; Toshimichi Ito; Roger Loo; Seiichi Miyazaki; Shinichi Takagi

  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 1 - 2 2017年11月
• Design and properties of planar-type tunnel FETs using In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As quantum well

  D. H. Ahn; S. M. Ji; M. Takenaka; S. Takagi

  Journal of Applied Physics 122 13 2017年10月 [査読有り]
  
• Low power Tunneling FET technologies using Ge/III-V materials

  S. Takagi; D.-H. Ahn; M. Noguchi; S.-H. Yoon; T. Gotow; K. Nishi; M. Kim; T.-E. Bae; T. Katoh; R. Matsumura; R. Takaguchi; M. Takenaka

  ECS Transactions 80 4 115 - 124 2017年10月 [査読有り][招待有り]
  
• Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics

  C. -Y. Chang; K. Endo; K. Kato; M. Takenaka; S. Takagi

  AIP ADVANCES 7 9 2017年09月 [査読有り]
  
• Benchmarking Si, SiGe, and III-V/Si Hybrid SIS Optical Modulators for Datacenter Applications

  Frederic Boeuf; Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  JOURNAL OF LIGHTWAVE TECHNOLOGY 35 18 4047 - 4055 2017年09月
• Effects of HfO2/Al2O3 gate stacks on electrical performance of planar InxGa1-xAs tunneling field-effect transistors

  Dae-Hwan Ahn; Sang-Hee Yoon; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 10 8 2017年08月
• Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

  Jae-Hoon Han; Frederic Boeuf; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi; Mitsuru Takenaka

  NATURE PHOTONICS 11 8 486 - + 2017年08月
• Effects of HfO

  Ahn Dae-Hwan; Yoon Sang-Hee; Takenaka Mitsuru; Takagi Shinichi

  Appl. Phys. Express 10 8 84201 - 84201 Institute of Physics 2017年07月
• Interface state generation of Al2O3/InGaAs MOS structures by electrical stress

  S. H. Yoon; C. Y. Chang; D. H. Ahn; M. Takenaka; S. Takagi

  Microelectronic Engineering 178 313 - 317 2017年06月 [査読有り]
  
• Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers

  M. Ke; M. Takenaka; S. Takagi

  Microelectronic Engineering 178 132 - 136 2017年06月 [査読有り]
  
• Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs

  C. -Y. Chang; Chiaki Yokoyama; M. Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 64 6 2519 - 2525 2017年06月
• Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III-V-on-insulator wafer

  Naoki Sekine; Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 56 4 2017年04月
• Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation

  Xiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 64 4 1418 - 1425 2017年04月
• MOS interface defect control in Ge/III-V gate stacks

  S. Takagi; M. Ke; C. Y. Chang; C. Yokoyama; M. Yokoyama; T. Gotow; K. Nishi; S. H. Yoon; M. Takenaka

  ECS Transactions 80 1 109 - 118 2017年
• III-V/Ge MOS device technologies for low power integrated systems

  S. Takagi; M. Noguchi; M. Kim; S. -H. Kim; C. -Y. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; M. Takenaka

  SOLID-STATE ELECTRONICS 125 82 - 102 2016年11月 [査読有り]
  
• Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Ryo Iida; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 9 11 2016年11月
• InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 109 21 2016年11月
• Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Rena Suzuki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 109 18 2016年10月
• Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 120 12 2016年09月
• Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

  M. Ke; X. Yu; C. Chang; M. Takenaka; S. Takagi

  Applied Physics Letters 109 3 2016年07月
• Novel Ge waveguide platform on Ge-oninsulator wafer for mid-infrared photonic integrated circuits

  Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 24 11 1855 - 1864 2016年05月
• Low-dark-current waveguide InGaAs metal-semiconductor-metal photodetector monolithically integrated with InP grating coupler on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 4 2016年04月
• Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 4 2016年04月
• Low resistivity lateral P-I-N junction formed by Ni-InGaAsP alloy for carrier injection InGaAsP photonic devices

  Jin-Kwon Park; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 4 2016年04月
• Effect of III-V on insulator structure on quantum well intermixing

  Seiya Takashima; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 4 2016年04月
• Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  SOLID-STATE ELECTRONICS 117 77 - 87 2016年03月
• Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

  J. Kang; X. Yu; M. Takenaka; S. Takagi

  Materials Science in Semiconductor Processing 42 259 - 263 2016年02月 [査読有り]
  
• Low temperature formation of higher- k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

  R. Zhang; P. C. Huang; N. Taoka; M. Yokoyama; M. Takenaka; S. Takagi

  Applied Physics Letters 108 5 2016年02月 [査読有り]
  
• First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 24 3 1979 - 1985 2016年02月
• Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 63 2 558 - 564 2016年02月
• Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge

  M. Takenaka; Y. Kim; J. Han; J. Kang; S. Takagi

  ECS Transactions 75 8 447 - 459 2016年 [査読有り]
  
• InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

  Jin-Kwon Park; Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  MRS ADVANCES 1 48 3295 - 3300 2016年
• Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut (TM) GeOI substrates

  Xiao Yu; Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  SOLID-STATE ELECTRONICS 115 120 - 125 2016年01月
• Fabrication and MOS interface properties of ALD AlYO<inf>3</inf>/GeO<inf>x</inf>/Ge gate stacks with plasma post oxidation

  M. Ke; X. Yu; R. Zhang; J. Kang; C. Chang; M. Takenaka; S. Takagi

  Microelectronic Engineering 147 244 - 248 2015年11月 [査読有り]
  
• Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOSFETs

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 36 11 1183 - 1185 2015年11月
• Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

  Xiao Yu; Jian Kang; Rui Zhang; Wei-Li Cai; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 147 196 - 200 2015年11月
• Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

  C. -Y. Chang; O. Ichikawa; T. Osada; M. Hata; H. Yamada; M. Takenaka; S. Takagi

  JOURNAL OF APPLIED PHYSICS 118 8 2015年08月 [査読有り]
  
• Surface Leakage Reduction in MSM InGaAs Photodetector on III-V CMOS Photonics Platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  IEEE PHOTONICS TECHNOLOGY LETTERS 27 14 1569 - 1572 2015年07月
• High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

  Munetaka Noguchi; SangHyeon Kim; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 118 4 2015年07月
• Suppression of dark current in GeOx-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

  Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 23 13 16967 - 16976 2015年06月
• Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures

  Koichi Nishi; Masafumi Yokoyama; Haruki Yokoyama; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 8 6 2015年06月
• III-V/Ge channel MOS device technologies in nano CMOS era

  Shinichi Takagi; Rui Zhang; Junkyo Suh; Sang-Hyeon Kim; Masafumi Yokoyama; Koichi Nishi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 6 2015年06月
• Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 23 9 12354 - 12361 2015年05月
• Improvement of S-factor method for evaluation of MOS interface state density

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 4 2015年04月
• Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation

  Wu-Kang Kim; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 4 2015年04月
• Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators With Vertical p-n Junction

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF QUANTUM ELECTRONICS 51 4 2015年04月
• Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

  Katsuhisa Tanaka; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 4 2015年04月
• Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 106 12 2015年03月
• Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 106 7 2015年02月
• MOS interface control technologies for advanced III-V/Ge devices

  S. Takagi; C. Y. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; J. H. Han; M. Takenaka

  ECS Transactions 69 5 37 - 51 2015年 [査読有り]
  
• Tunneling FET technologies using III-V and Ge materials

  S. Takagi; M. Kim; M. Noguchi; K. Nishi; M. Takenaka

  ECS Transactions 69 10 99 - 108 2015年 [査読有り]
  
• High performance III-V-on-insulator MOSFETs on Si realized by direct wafer bonding applicable to large wafer size

  S. Takagi; S. H. Kim; Y. Ikku; M. Yokoyama; R. Nakane; J. Li; Y. C. Kao; M. Takenaka

  ECS Transactions 66 5 27 - 35 2015年 [査読有り]
  
• Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect

  Minsoo Kim; Yuki K. Wakabayashi; Masafumi Yokoyama; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 62 1 9 - 15 2015年01月
• Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates

  Xiao Yu; Rui Zhang; Jian Kang; Tatsuro Maeda; Taro Itatani; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  ECS SOLID STATE LETTERS 4 2 P15 - P18 2015年
• Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111) A surfaces

  K. Nishi; M. Yokoyama; H. Yokoyama; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 105 23 233503  2014年12月 [査読有り]
  
• A Ge Ultrathin-Body n-Channel Tunnel FET: Effects of Surface Orientation

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 11 3594 - 3600 2014年11月
• Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 11 3668 - 3675 2014年11月
• Sb-Doped S/D Ultrathin Body Ge-on Insulator nMOSFET Fabricated by Improved Ge Condensation Process

  W. -K. Kim; Kouichi Kuroda; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 10 3379 - 3385 2014年10月
• Dielectric Thin Films for Future Electron Devices: Science and Technology FOREWORD

  Hiroyuki Kageshima; Shinichi Takagi; Renichi Yamada

  JAPANESE JOURNAL OF APPLIED PHYSICS 53 8 3 - 3 2014年08月
• Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

  SangHyeon Kim; Yuki Ikku; Masafumi Yokoyama; Ryosho Nakane; Jian Li; Yung-Chung Kao; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 105 4 2014年07月
• Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 7 2316 - 2323 2014年07月
• Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 26 2014年06月
• Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

  Masafumi Yokoyama; Yuji Asakura; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 26 2014年06月
• Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 5 1335 - 1340 2014年05月
• High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability

  Sang-Hyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 5 1354 - 1360 2014年05月
• Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

  Minsoo Kim; Younghyun Kim; Masafumi Yokoyama; Ryosho Nakane; SangHyeon Kim; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 557 298 - 301 2014年04月
• Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator

  Younghyun Kim; Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 22 7 7458 - 7464 2014年04月
• Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  SCIENTIFIC REPORTS 4 2014年04月
• Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  THIN SOLID FILMS 557 342 - 345 2014年04月
• Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures

  Nozomi Yoshida; Eiji Waki; Manabu Arai; Kimiyoshi Yamasaki; Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 557 237 - 240 2014年04月
• Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 115 9 2014年03月
• Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

  SangHyeon Kim; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 11 2014年03月
• Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

  Masafumi Yokoyama; Koichi Nishi; Sanghyeon Kim; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 9 2014年03月
• Impact of Plasma Postoxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs

  Rui Zhang; Ju-Chin Lin; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 2 416 - 422 2014年02月
• III-V/Ge device engineering for CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  Materials Science Forum 783-786 2028 - 2033 2014年
• Material challenges and opportunities in Ge/III-V channel MOSFETs

  S. Takagi; S. H. Kim; M. Yokoyama; K. Nishi; R. Zhang; M. Takenaka

  ECS Transactions 64 11 99 - 110 2014年 [査読有り]
  
• InGaAs Msm photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  IEICE ELECTRONICS EXPRESS 11 16 2014年
• Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

  Koichi Nishi; Masafumi Yokoyama; Sanghyeon Kim; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 115 3 2014年01月
• Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 12 4213 - 4218 2013年12月
• Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 13 4 456 - 462 2013年12月
• High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 10 3342 - 3350 2013年10月
• Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 114 16 2013年10月
• Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

  Shinichi Takagi; Rui Zhang; Mitsuru Takenaka

  MICROELECTRONIC ENGINEERING 109 389 - 395 2013年09月
• Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 103 14 2013年09月
• Formation of III-V-on-insulator structures on Si by direct wafer bonding

  Masafumi Yokoyama; Ryo Iida; Yuki Ikku; Sanghyeon Kim; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28 9 2013年09月
• Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

  Sanghyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 8 2512 - 2517 2013年08月
• Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth

  Younghyun Kim; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 21 17 19615 - 19623 2013年08月
• Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sung-Hoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON NANOTECHNOLOGY 12 4 621 - 628 2013年07月
• Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

  Jaehoon Han; Rui Zhang; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 6 5 2013年05月
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si

  Sung-Ho Jeon; Noriyuki Taoka; Hiroaki Matsumoto; Kiyotaka Nakano; Susumu Koyama; Hiroshi Kakibayasi; Koji Araki; Moriya Miyashita; Koji Izunome; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 52 4 2013年04月
• InGaAsP Grating Couplers Fabricated Using Complementary-Metal-Oxide-Semiconductor-Compatible III-V-on-Insulator on Si

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 6 4 2013年04月
• High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 3 927 - 934 2013年03月
• Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 102 8 2013年02月
• Performance enhancement technologies in III-V/Ge MOSFETs

  S. Takagi; R. Zhang; S. H. Kim; M. Yokoyama; M. Takenaka

  ECS Transactions 58 9 137 - 148 2013年 [査読有り]
  
• III-V/Ge MOS transistor technologies for future ULSI

  S. Takagi; M. Takenaka

  ECS Transactions 54 1 39 - 54 2013年 [査読有り]
  
• III-V/Ge CMOS device technologies for high performance logic applications

  S. Takagi; M. Yokoyama; S. H. Kim; R. Zhang; R. Suzuki; N. Taoka; M. Takenaka

  ECS Transactions 53 3 85 - 96 2013年 [査読有り]
  
• Limiting factors of channel mobility in III-V/Ge MOSFETs

  S. Takagi; S. H. Kim; R. Zhang; N. Taoka; M. Yokoyama; M. Takenaka

  ECS Transactions 53 3 107 - 122 2013年 [査読有り]
  
• Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

  R. Zhang; J. C. Lin; X. Yu; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 97 - 100 2013年 [査読有り]
  
• Impact of plasma post-nitridation on HfO2/Al2O 3/SiGe gate stacks toward EOT scaling

  J. H. Han; R. Zhang; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 266 - 269 2013年 [査読有り]
  
• Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

  C. Y. Chang; M. Yokoyama; S. H. Kim; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 28 - 30 2013年 [査読有り]
  
• Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

  Yuki Ikku; Masafumi Yokoyama; Osamu Ichikawa; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 20 26 B357 - B364 2012年12月
• Formation of Thin Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 12 2012年12月
• Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

  Takuya Hoshii; Sunghoon Lee; Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; Hishashi Yamada; Masahiko Hata; Tetsuji Yasuda; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 112 7 2012年10月
• Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

  Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; Sang-Hyeon Kim; Takuya Hoshii; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 112 8 2012年10月
• Uniformity improvement of selectively-grown InGaAs micro-discs on Si

  Masakazu Sugiyama; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano

  JOURNAL OF CRYSTAL GROWTH 352 1 229 - 234 2012年08月
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

  Masafumi Yokoyama; Sanghyeon Kim; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tatsuro Maeda; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 7 2012年07月
• Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb

  Cezar B. Zota; Sang-Hyeon Kim; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 7 2012年07月
• Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing

  Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Akihiro Ohtake; Hisashi Yamada; Masahiko Hata; Sunghoon Lee; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 6 2012年06月
• Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 100 19 2012年05月
• High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  APPLIED PHYSICS LETTERS 100 21 2012年05月
• Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping

  Mitsuru Takenaka; Kiyohito Morii; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  OPTICS EXPRESS 20 8 8718 - 8725 2012年04月
• 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

  R. Suzuki; N. Taoka; M. Yokoyama; S. Lee; S. H. Kim; T. Hoshii; T. Yasuda; W. Jevasuwan; T. Maeda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 100 13 3  2012年03月 [査読有り]
  
• Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

  Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Masahiko Hata; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  MATERIALS 5 3 404 - 414 2012年03月
• In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 100 7 2012年02月
• High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation

  Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 59 2 335 - 341 2012年02月
• MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

  S. Takagi; R. Zhang; R. Suzuki; N. Taoka; M. Yokoyama; M. Takenaka

  ECS Transactions 50 4 107 - 122 2012年 [査読有り]
  
• Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3

  R. Zhang; P. C. Huang; J. C. Lin; M. Takenaka; S. Takagi

  ECS Transactions 50 9 699 - 706 2012年 [査読有り]
  
• Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 1 2012年01月
• Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

  Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF QUANTUM ELECTRONICS 48 1 8 - 16 2012年01月
• Effect of Sample Thickness on SiO2/Si Interface Roughness Characterization through Transmission Electron Microscope Measurements in Strained-Si MOSFETs

  Yi Zhao; Hirosaki Matsumoto; Susumu Koyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159 1 H57 - H60 2012年
• Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

  Ryo Iida; Sang-Hyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Sang-Hoon Lee; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 110 12 2011年12月
• Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

  Noriyuki Miyata; Hiroyuki Ishii; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 88 12 3459 - 3461 2011年12月
• High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 11 2011年11月
• Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 99 14 2011年10月
• Accurate evaluation of Ge metal-insulator-semiconductor interface properties

  Noriyuki Taoka; Keiji Ikeda; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 110 6 2011年09月
• Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers

  Masafumi Yokoyama; Ryo Iida; Sanghyeon Kim; Noriyuki Taoka; Yuji Urabe; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 32 9 1218 - 1220 2011年09月
• Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile Strain

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 32 8 1005 - 1007 2011年08月
• Impact of GeOx interfacial layer thickness on Al 2O3/Ge MOS interface properties

  R. Zhang; T. Iwasaki; N. Taoka; M. Takenaka; S. Takagi

  Microelectronic Engineering 88 7 1533 - 1536 2011年07月 [査読有り]
  
• On the mechanisms limiting mobility in InP/InGaAs buried channel nMISFETs

  Y. Urabe; T. Yasuda; H. Ishii; T. Itatani; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  MICROELECTRONIC ENGINEERING 88 7 1076 - 1078 2011年07月 [査読有り]
  
• AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Takuya Hoshii; Ryo Iida; Sunghoon Lee; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 88 7 1087 - 1090 2011年07月
• Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 98 24 2011年06月
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

  Masafumi Yokoyama; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 5 2011年05月
• High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy

  Momoko Deura; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yukihiro Shimogaki; Yoshiaki Nakano; Masakazu Sugiyama

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 4 2011年04月
• Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 109 8 2011年04月
• Al2 O3 / GeOx /Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

  R. Zhang; T. Iwasaki; N. Taoka; M. Takenaka; S. Takagi

  Applied Physics Letters 98 11 2011年03月 [査読有り]
  
• Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

  Sanjeewa Dissanayake; Yi Zhao; S. Sugahara; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 109 3 2011年02月
• Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 2 2011年02月
• Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature

  Mizuno Tomohisa; Moriyama Yoshihiko; Tezuka Tsutomu; Sugiyama Naoharu; Takagi Shin-ichi

  Jpn J Appl Phys 50 1 10107 - 010107-8 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2011年01月
• Device and integration technologies of III-V/Ge channel CMOS

  S. Takagi; M. Yokoyama; S. H. Kim; R. Zhang; M. Takenaka

  ECS Transactions 41 7 203 - 218 2011年 [査読有り]
  
• Prospective and critical issues of III-V/Ge CMOS on Si platform

  S. Takagi; M. Takenaka

  ECS Transactions 35 3 279 - 298 2011年 [査読有り]
  
• MOS Interface Control Technologies for III-V/Ge Channel MOSFETs

  S. Takagi; R. Zhang; T. Hoshii; N. Taoka; M. Takenaka

  PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 41 3 3 - 20 2011年 [査読有り]
  
• Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers

  Yosuke Nakakita; Ryosho Nakakne; Takashi Sasada; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 1 2011年01月
• Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Full Ballistic Transport

  Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 1 2011年01月
• High Mobility Ge-based CMOS Device Technologies

  Shinichi Takagi; Sanjeewa Dissanayake; Mitsuru Takenaka

  TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS 470 1 - 7 2011年
• Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal-Organic Source

  Mitsuru Takenaka; Kiyohito Morii; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 1 2011年01月
• Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

  Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY 158 8 G178 - G184 2011年
• Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

  Yuji Urabe; Masafumi Yokoyama; Hideki Takagi; Tetsuji Yasuda; Noriyuki Miyata; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 97 25 2010年12月
• Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 108 10 2010年11月
• A Novel Characterization Scheme of Si/SiO2 Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

  Yi Zhao; Hirosaki Matsumoto; Takeshi Sato; Susumu Koyama; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 57 9 2057 - 2066 2010年09月
• Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors

  Weber Olivier; Takenaka Mitsuru; Takagi Shin-ichi

  Jpn J Appl Phys 49 7 74101 - 074101-5 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2010年07月
• Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

  Momoko Deura; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 312 8 1353 - 1358 2010年04月
• Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si

  Yoshiyuki Kondo; Momoko Deura; Yuki Terada; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 312 8 1348 - 1352 2010年04月
• III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 96 14 2010年04月
• High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping

  Morii, K.; Iwasaki, T.; Nakane, R.; Takenaka, M.; Takagi, S.

  IEEE Electron Device Letters 31 10 2010年
• III-V-On-Insulator MOSFETs on Si Substrates Fabricated by Direct Bonding Technique

  S. Takagi; M. Yokoyama; H. Takagi; Y. Urabe; T. Yasuda; H. Yamada; M. Hata; M. Takenaka

  SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE 33 4 359 - 370 2010年 [査読有り]
  
• Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

  Hoshii T; Yokoyama M; Yamada H; Hata M; Yasuda T; Takenaka M; Takagi S

  Applied Physics Letters 97 13 3  2010年 [査読有り]
  
• Critical factors for enhancement of compressive strain in SGOI layers fabricated by Ge condensation technique

  S. Takagi; K. Tomiyama; S. Dissanayake; M. Takenaka

  ECS Transactions 33 6 501 - 509 2010年 [査読有り]
  
• Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

  T. Haimoto; T. Hoshii; S. Nakagawa; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 96 1 2010年01月 [査読有り]
  
• High quality thin body III-V-on-insulator channel layer transfer on Si wafer using direct wafer bonding

  M. Yokoyama; T. Yasuda; H. Takagi; H. Yamada; Y. Urabe; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  ECS Transactions 33 4 391 - 401 2010年
• High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

  Sanjeewa Dissanayake; Kentaro Tomiyama; Satoshi Sugahara; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 3 4 2010年
• Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal-Organic Vapor Phase Epitaxy

  Yoshiyuki Kondo; Momoko Deura; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 12 2010年
• High Electron Mobility Ge n-Channel Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

  Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 3 6 2010年
• Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal-Oxide-Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

  Yukio Nakabayashi; Takamitsu Ishihara; Toshinori Numata; Ken Uchida; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 4 2010年
• Effect of Ge Metal-Insulator-Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 4 2010年
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

  Hiroyuki Ishii; Noriyuki Miyata; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 12 2009年12月
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 12 2009年12月
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 12 2009年12月
• Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

  Yoshihiko Moriyama; Norio Hirashita; Koji Usuda; Shu Nakaharai; Naoharu Sugiyama; Eiji Toyoda; Shin-ichi Takagi

  Applied Surface Science 256 3 823 - 829 2009年11月
• Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

  Takashi Sasada; Yosuke Nakakita; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 106 7 2009年10月
• On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 30 9 987 - 989 2009年09月
• Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

  Toshifumi Irisawa; Kimitoshi Okano; Takuya Horiuchi; Hiroshi Itokawa; Ichiro Mizushima; Koji Usuda; Tsutomu Tezuka; Naoharu Sugiyama; Shin-ichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 8 1651 - 1658 2009年08月
• Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

  Noriyuki Taoka; Toyoji Yamamoto; Masatomi Harada; Yoshimi Yamashita; Naoharu Sugiyama; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 106 4 2009年08月
• Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 5 1152 - 1156 2009年05月
• Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

  Kunihiro Suzuki; Keiji Ikeda; Yoshimi Yamashita; Masaomi Harada; Noriyuki Taoka; Osamu Kiso; Toyoji Yamamoto; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 4 627 - 633 2009年04月
• Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

  Kiyohito Morii; Sanjeewa Dissanayake; Satoshi Tanabe; Ryosho Nakane; Mitsuru Takenaka; Satoshi Sugahara; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 4 2009年04月
• Investigation of InAlAs Oxide/InP Metal-Oxide-Semiconductor Structures Formed by Wet Thermal Oxidation

  Shota Nakagawa; Masafumi Yokoyama; Osamu Ichikawa; Masahiko Hata; Masaaki Tanaka; Mituru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 4 2009年04月
• Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes

  Tsutomu Tezuka; Eiji Toyoda; Toshifumi Irisawa; Norio Hirashita; Yoshihiko Moriyama; Naoharu Sugiyama; Koji Usuda; Shin-Ichi Takagi

  Applied Physics Letters 94 8 2009年
• Interfacial control and electrical properties of Ge MOS structures

  S. Takagi; N. Taoka; M. Takenaka

  ECS Transactions 19 2 67 - 85 2009年 [査読有り]
  
• Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Journal of Applied Physics 105 2 2009年
• In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

  M. Deura; Y. Kondo; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

  ECS Transactions 25 8 PART 1 521 - 524 2009年
• Ge/III-V channel engineering for future CMOS

  S. Takagi; M. Sugiyama; T. Yasuda; M. Takenaka

  ECS Transactions 19 5 9 - 20 2009年
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

  Momoko Deura; Takuya Hoshii; Takahisa Yamamoto; Yuichi Ikuhara; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  APPLIED PHYSICS EXPRESS 2 1 2009年01月
• Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique

  T. Irisawa; T. Numata; N. Hirashita; Y. Moriyama; S. Nakaharai; T. Tezuka; N. Sugiyama; S. Takagi

  Thin Solid Films 517 1 167 - 169 2008年11月
• Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si

  Momoko Deura; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 310 23 4768 - 4771 2008年11月
• (110) Ultrathin GOI layers fabricated by Ge condensation method

  Sanjeewa Dissanayake; Yusuke Shuto; Satoshi Sugahara; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 517 1 178 - 180 2008年11月
• Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process

  Hirashita Norio; Moriyama Yoshihiko; Nakaharai Shu; Irisawa Toshifumi; Sugiyama Naoharu; Takagi Shin-ichi

  Applied physics express 1 10 101401 - 101401-3 Japan Society of Applied Physics 2008年10月
• Influence of elastic and inelastic phonon scattering on the drive current of quasi-ballistic MOSFETs

  Tsuchiya Hideaki; Takagi Shin-ichi

  IEEE Transactions on Electron Devices 55 9 2397 - 2402 Institute of Electrical and Electronics Engineers (IEEE) 2008年09月
• NMR study on the formation mechanism of beta-SiAlON from zeolite by nitridation using ammonia gas

  Toru Wakihara; Yuri Saito; Junichi Tatami; Katsutoshi Komeya; Takeshi Meguro; Kenneth J. D. Mackenzie; Shinichi Takagi; Masahiro Yokouchi

  JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 116 1357 980 - 983 2008年09月
• Experimental examination and physical understanding of the Coulomb scattering mobility in strained-Si nMOSFETs

  Olivier Weber; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 9 2386 - 2396 2008年09月
• Evidence of low interface trap density in GeO(2)/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

  Hiroshi Matsubara; Takashi Sasada; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 93 3 2008年07月
• Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

  Sugiyama Naoharu; Numata Toshinori; Hirashita Norio; Irisawa Toshifumi; Takagi Shin-ichi

  Jpn J Appl Phys 47 6 4403 - 4407 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2008年06月
• Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

  Noriyuki Taoka; Masatomi Harada; Yoshimi Yamashita; Toyoji Yamamoto; Naoharu Sugiyama; Shin-Ichi Takagi

  APPLIED PHYSICS LETTERS 92 11 2008年03月
• Device design and electron transport properties of uniaxially strained-SOI tri-gate nMOSFETs

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 55 2 649 - 654 2008年02月
• Physical understanding of strain-induced modulation of gate oxide reliability in MOSFETs

  Toshifumi Irisawa; Toshinori Numata; Eiji Toyoda; Norio Hirashita; Tsutomu Tezuka; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 55 11 3159 - 3166 2008年
• Uniaxially strained Si/SiGe wire-channel transistors

  T. Tezuka; T. Irisawa; E. Toyoda; N. Sugiyama; S. Takagi

  ECS Transactions 13 1 263 - 274 2008年
• Uniaxially strained SGOI and SSOI channels for high performance multi-gate CMOS

  T. Irisawa; T. Numata; T. Tezuka; K. Usuda; N. Hirashita; Y. Moriyama; N. Sugiyama; S. Takagi

  ECS Transactions 16 10 367 - 379 2008年
• Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas

  Takuya Hoshii; Momoko Deura; Masakazu Sugiyama; Ryosho Nakane; Satoshi Sugahara; Mitsuru Takenaka; Yoshiaki Nakano; Shinichi Takagi

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 9 2733 - + 2008年
• Carrier-transport-enhanced channel CMOS for improved power consumption and performance

  Shinichi Takagi; Toshifurni Irisawa; Tsutomu Tezuka; Toshinori Numata; Shu Nakaharai; Norio Hirashita; Yoshihiko Moriyama; Koji Usuda; Eiji Toyoda; Sanjeewa Dissanayake; Masato Shichijo; Ryosho Nakane; Satoshi Sugahara; Mitsuru Takenaka; Naoharu Sugiyama

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 1 21 - 39 2008年01月
• Gate dielectric formation and MIS interface characterization on Ge

  S. Takagi; T. Maeda; N. Taoka; M. Nishizawa; Y. Morita; K. Ikeda; Y. Yamashita; M. Nishikawa; H. Kumagai; R. Nakane; S. Sugahara; N. Sugiyama

  MICROELECTRONIC ENGINEERING 84 9-10 2314 - 2319 2007年09月 [査読有り]
  
• Fabrication of III-V on insulator structures on si using microchannel epitaxy with a two-step growth technique

  Masato Shichijo; Ryosho Nakane; Satoshi Sugahara; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 9A 5930 - 5934 2007年09月
• Hole-mobility enhancement in Ge-rich strained SiGe-on-insulator pMOSFETs at high temperatures

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Naoharu Sugiyama; Akihito Tanabe; Koji Usuda; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 54 5 1249 - 1252 2007年05月
• Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

  Uehara Takashi; Matsubara Hiroshi; Nakane Ryosho; Sugahara Satoshi; Takagi Shin-ichi

  Jpn J Appl Phys 46 4 2117 - 2121 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2007年04月
• Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

  Hoshii Takuya; Sugahara Satoshi; Takagi Shin-ichi

  Jpn J Appl Phys 46 4 2122 - 2126 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2007年04月
• Device structures and carrier transport properties of advanced CMOS using high mobility channels

  S. Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Numata; K. Usuda; N. Sugiyama; M. Shichijo; R. Nakane; S. Sugahara

  Solid-State Electronics 51 4 SPEC. ISS. 526 - 536 2007年04月
• Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures

  Tatsuro Maeda; Masayasu Nishizawa; Yukinori Morita; Shinichi Takagi

  APPLIED PHYSICS LETTERS 90 7 2007年02月
• Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process

  Tsutomu Tezuka; Norio Hirashita; Yoshihiko Moriyama; Shu Nakaharai; Naoharu Sugiyama; Shin-Ichi Takagi

  Applied Physics Letters 90 18 2007年
• Strained SOI/SGOI dual-channel CMOS technology based on the Ge condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Toshinori Numata; Toshifumi Irisawa; Koji Usuda; Naoharu Sugiyama; Tomohisa Mizuno; Shin-Ichi Takagi

  Semiconductor Science and Technology 22 1 S93 - S98 2007年01月
• Effects of ambient conditions in thermal treatment for Ge(001) surfaces on Ge-MIS interface properties

  Noriyuki Taoka; Keiji Ikeda; Yoshimi Yamashita; Naoharu Sugiyama; Shin-ichi Takagi

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 1 S114 - S117 2007年01月
• The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Semiconductor Science and Technology 22 1 2007年01月
• The formation of SGOI structures with low dislocation density by a two-step oxidation and condensation method

  N. Sugiyama; S. Nakaharai; N. Hirashita; T. Tezuka; Y. Moriyama; K. Usuda; S. Takagi

  Semiconductor Science and Technology 22 1 2007年01月
• Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method

  K. Usuda; T. Irisawa; T. Numata; N. Hirashita; S. Takagi

  Semiconductor Science and Technology 22 1 2007年01月
• Mobility-enhanced device technologies using SiGe/Ge MOS channels

  S. Takagi; T. Irisawa; T. Tezuka; S. Nakaliarai; T. Numata; N. Hirashita; Y. Moriyama; K. Usuda; S. Dissanayake; M. Tekenaka; S. Sugahara; N. Sugiyama

  ECS Transactions 11 6 61 - 74 2007年
• Low-temperature mobilities and energy loss rates of two-dimensional electrons in Si inversion layers

  Kyung Hwa Park; Kazuhiko Hirakawa; Shinichi Takagi

  PHYSICS OF SEMICONDUCTORS, PTS A AND B 893 601 - + 2007年
• Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

  Shinichi Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Maeda; T. Numata; K. Ikeda; N. Sugiyama

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 135 3 250 - 255 2006年12月
• High-performance uniaxially strained SiGe-on-insulator pMOSFETs fabricated by lateral-strain-relaxation technique

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Norio Hirashita; Naoharu Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 53 11 2809 - 2815 2006年11月
• Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contact

  Tatsuro Maeda; Shinichi Takagi; Tsuyoshi Ohnishi; Mikk Lippmaa

  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9 4-5 706 - 710 2006年08月
• Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

  Tatsuro Maeda; Tetsuji Yasuda; Masayasu Nishizawa; Noriyuki Miyata; Yukinori Morita; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 100 1 2006年07月
• Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

  Tsutomu Tezuka; Yoshihiko Moriyama; Shu Nakaharai; Naoharu Sugiyama; Norio Hirashita; Eiji Toyoda; Yoshiji Miyamura; Shin-ichi Takagi

  Thin Solid Films 508 1-2 251 - 255 2006年06月
• Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

  Keiji Ikeda; Tatsuro Maeda; Shin-ichi Takagi

  THIN SOLID FILMS 508 1-2 359 - 362 2006年06月
• Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

  Tatsuro Maeda; Keiji Ikeda; Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shinichi Takagi

  THIN SOLID FILMS 508 1-2 346 - 350 2006年06月
• Performance enhancement of partially and fully depleted strained-SOI MOSFETs

  Toshinori Numata; Toshifumi Irisawa; Tsutomu Tezuka; Junji Koga; Norio Hirashita; Koji Usuda; Eiji Toyoda; Yoshiji Miyamura; Akihito Tanabe; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 53 5 1030 - 1038 2006年05月
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

  Ishihara Takamitsu; Uchida Ken; Koga Junji; Takagi Shin-ichi

  Jpn J Appl Phys 45 4 3125 - 3132 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2006年04月
• Effects of interfacial layers formed by plasma oxidation and nitridation on HfO2/Ge-MIS properties

  T. Maeda; Y. Morita; M. Nishizawa; S. Takagi

  ECS Transactions 3 7 551 - 558 2006年 [査読有り]
  
• Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

  Y. Moriyama; N. Hirashita; E. Toyoda; K. Usuda; S. Nakaharai; N. Sugiyama; S. Takagi

  ECS Transactions 3 7 1183 - 1190 2006年 [査読有り]
  
• Fabrication and electrical characterization of strained Si-on-insulator/Strained SiGe-on-insulator dual channel CMOS structures with high-mobility channels

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Naoharu Sugiyama; Tomohisa Mizuno; Shinichi Takagi

  IEEJ Transactions on Electronics, Information and Systems 126 11 1332 - 1338 2006年
• Prospects and critical issues on Ge MOS technologies

  S. Takagi; N. Taoka; S. Nakaharai; K. Ikeda; T. Tezuka; Y. Yamashita; Y. Moriyama; T. Maeda; N. Sugiyama

  ECS Transactions 3 7 823 - 829 2006年
• Ge condensation technologies for advanced MOSFETs on SGOI and GOI substrates

  N. Sugiyama; T. Tezuka; T. Irisawa; K. Usuda; Y. Moriyama; S. Nakaharai; N. Hirashita; S. Takagi

  ECS Transactions 3 7 1015 - 1022 2006年
• Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

  Koji Usuda; Toshinori Numata; Toshifumi Irisawa; Norio Hirashita; Shinichi Takagi

  Materials Science and Engineering B: Solid-State Materials for Advanced Technology 124-125 SUPPL. 143 - 147 2005年12月
• On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

  Toshifumi Irisawa; Toshinori Numata; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 52 5 993 - 998 2005年05月
• Sub-band structure engineering for advanced CMOS channels

  S Takagi; T Mizuno; T Tezuka; N Sugiyama; S Nakaharai; T Numata; J Koga; K Uchida

  SOLID-STATE ELECTRONICS 49 5 684 - 694 2005年05月 [査読有り]
  
• High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Electron Device Letters 26 4 243 - 245 2005年04月
• High-performance (1 1 0)-surface strained-SOI MOSFETs

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Materials Science in Semiconductor Processing 8 1-3 SPEC. ISS. 327 - 336 2005年02月
• High mobility Ge-on-Insulator p-channel MOSFETs using Pt Germanide Schottky source/drain

  Tatsuro Maeda; Keiji Ikeda; Shu Nakaharai; Tsutomu Tezuka; Naoham Sugiyama; Yoshihiko Moriyama; Shinichi Takagi

  IEEE Electron Device Letters 26 2 102 - 104 2005年02月
• Local strain evaluation of strained-SOI structures

  Koji Usuda; Tomohisa Mizuno; Toshinori Numata; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Shinku/Journal of the Vacuum Society of Japan 48 1 18 - 22 2005年
• (110)-Surface strained-SOI CMOS devices

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 52 3 367 - 374 2005年
• High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S.

  Ieee Transactions on Electron Devices 52 12 2690 - 2696 2005年 [査読有り]
  
• Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

  T Maeda; T Yasuda; M Nishizawa; N Miyata; Y Morita; S Takagi

  APPLIED PHYSICS LETTERS 85 15 3181 - 3183 2004年10月 [査読有り]
  
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer

  Koga Junji; Ishihara Takamitsu; Takagi Shin-ichi

  Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43 4 1699 - 1703 公益社団法人 応用物理学会 2004年04月
• Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

  Shin-Ichi Takagi; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Toshinori Numata; Koji Usuda; Yoshihiko Moriyama; Shu Nakaharai; Junji Koga; Akihito Tanabe; Tatsuro Maeda

  Applied Surface Science 224 1-4 241 - 247 2004年03月
• Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

  Koji Usuda; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Applied Surface Science 224 1-4 113 - 116 2004年03月
• Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

  N. Sugiyama; Y. Moriyama; S. Nakaharai; T. Tezuka; T. Mizuno; S. Takagi

  Applied Surface Science 224 1-4 188 - 192 2004年03月 [査読有り]
  
• Thin-film strained-SOI CMOS devices - Physical mechanisms for reduction of carrier mobility

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Numata, T.; Maeda, T.; Takagi, S.

  Ieee Transactions on Electron Devices 51 7 1114 - 1121 2004年 [査読有り]
  
• SiGe-on-Insulator and Ge-on-Insulator substrates fabricated by Ge-condensation technique for high-mobility channel CMOS devices

  Tezuka, T.; Mizuno, T.; Sugiyama, N.; Nakaharai, S.; Moriyama, Y.; Usuda, K.; Numata, T.; Hirashita, N.; Maeda, T.; Takagi, S.; Miyamura, Y.; Toyoda, E.

  High-Mobility Group-Iv Materials and Devices 809 65 - 75 2004年 [査読有り]
  
• Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

  Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shin-Ichi Takagi

  Applied Physics Letters 83 17 3516 - 3518 2003年10月
• Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

  K Uchida; S Takagi

  APPLIED PHYSICS LETTERS 82 17 2916 - 2918 2003年04月 [査読有り]
  
• High-performance strained-soi cmos devices using thin film sige-on-insulator technology

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Toshinori Numata; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 50 4 988 - 994 2003年
• Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs

  J. Koga; S. Takagi; A. Toriumi

  IEEE Transactions on Electron Devices 49 6 1042 - 1048 2002年06月 [査読有り]
  
• Dislocation-free formation of relaxed SiGe-on-insulator layers

  T. Tezuka; N. Sugiyama; S. Takagi; T. Kawakubo

  Applied Physics Letters 80 19 3560 - 3562 2002年05月 [査読有り]
  
• Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption

  S. Takagi

  IEICE Trans. Electron. E85-C 5 1064 - 1072 2002年05月 [査読有り][招待有り]
  
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

  Takamitsu Ishihara; Kazuya Matsuzawa; Mariko Takayanagi; Shin-ichi Takagi

  Japanese Journal of Applied Physics 41 Part 1, No. 4B 2353 - 2358 2002年04月 [査読有り]
  
• Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

  Shin-ichi Takagi; Mariko Takayanagi

  Japanese Journal of Applied Physics 41 Part 1, No. 4B 2348 - 2352 2002年04月 [査読有り]
  
• Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

  T Tezuka; N Sugiyama; S Takagi

  Materials Science and Engineering: B 89 1-3 360 - 363 2002年02月 [査読有り]
  
• Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

  S Takagi; N Sugiyama; T Mizuno; T Tezuka; A Kurobe

  Materials Science and Engineering: B 89 1-3 426 - 434 2002年02月 [査読有り]
  
• Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Shin-ichi Takagi

  Applied Physics Letters 80 4 601 - 603 2002年01月 [査読有り]
  
• Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures

  T. Mizuno; N. Sugiyama; T. Tezuka; S. Takagi

  IEEE Transactions on Electron Devices 49 1 7 - 14 2002年01月 [査読有り]
  
• Carrier transport properties of thin gate oxides after soft and hard breakdown

  Shin-ichi Takagi; Mariko Takayanagi

  Microelectronic Engineering 59 1-4 5 - 15 2001年11月 [査読有り]
  
• Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures

  T. Mizuno; N. Sugiyama; A. Kurobe; S. Takagi

  IEICE Trans. Electron. E84-C 10 1423 - 1430 2001年10月 [査読有り][招待有り]
  
• Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

  Ken Uchida; Junji Koga; Ryuji Ohba; Shin-ichi Takagi; Akira Toriumi

  Journal of Applied Physics 90 7 3551 - 3557 2001年10月 [査読有り]
  
• Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

  T. Tezuka; N. Sugiyama; S. Takagi

  Applied Physics Letters 79 12 1798 - 1800 2001年09月 [査読有り]
  
• Strained-Si-on-Insulator (Strained-SOI) MOSFETs - Concept, Structures and Device Characteristics

  S. Takagi; T. Mizuno; N. Sugiyama; T. Tezuka; A. Kurobe

  IEICE Trans. Electron. E84-C 8 1043 - 1050 2001年08月 [査読有り][招待有り]
  
• Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

  T. Mizuno; N. Sugiyama; A. Kurobe; S.-i. Takagi

  IEEE Transactions on Electron Devices 48 8 1612 - 1618 2001年08月 [査読有り]
  
• Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

  Hiroshi Watanabe; Shin-ichi Takagi

  Journal of Applied Physics 90 3 1600 - 1607 2001年08月 [査読有り]
  
• SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

  A. Nishiyama; K. Matsuzawa; S. Takagi

  IEEE Transactions on Electron Devices 48 6 1114 - 1120 2001年06月 [査読有り]
  
• Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs

  Naoharu Sugiyama; Tomohisa Mizuno; Masamichi Suzuki; Sin-ichi Takagi

  Japanese Journal of Applied Physics 40 4S 2875 - 2875 2001年04月 [査読有り]
  
• Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime

  Tetsuo Hatakeyama Tetsuo Hatakeyama; Kazuya Matsuzawa Kazuya Matsuzawa; Shin-ichi Takagi Shin-ichi Takagi

  Japanese Journal of Applied Physics 40 4S 2627 - 2627 2001年04月 [査読有り]
  
• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N₂O and NO Oxynitrides

  Takamitsu Ishihara; Shin-ichi Takagi; Masaki Kondo

  Japanese Journal of Applied Physics 40 4S 2597 - 2597 2001年04月 [査読有り]
  
• A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

  Tsutomu Tezuka; Naoharu Sugiyama; Tomohisa Mizuno; Masamichi Suzuki; Shin-ichi Takagi

  Japanese Journal of Applied Physics 40 4S 2866 - 2866 2001年04月 [査読有り]
  
• Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs

  Shin-ichi Takagi; Tsutomu Tezuka; Naoharu Sugiyama; Tomohisa Mizuno; Atsushi Kurobe

  MRS Proceedings 686 2 9 - 20 2001年03月 [査読有り]
  
• Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

  N Sugiyama; T Mizuno; S Takagi; M Koike; A Kurobe

  Thin Solid Films 369 1-2 199 - 202 2000年07月 [査読有り]
  
• Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs

  Tsutomu Tezuka; Atsushi Kurobe; Naoharu Sugiyama; Shin-ichi Takagi

  Thin Solid Films 369 1-2 338 - 341 2000年07月 [査読有り]
  
• Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

  Ken Uchida; Kazuya Matsuzawa; Junji Koga; Shin-ichi Takagi; Akira Toriumi

  Applied Physics Letters 76 26 3992 - 3994 2000年06月 [査読有り]
  
• Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

  T. Mizuno; S. Takagi; N. Sugiyama; H. Satake; A. Kurobe; A. Toriumi

  IEEE Electron Device Letters 21 5 230 - 232 2000年05月 [査読有り]
  
• Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's

  S. Takagi; M. Takayanagi; A. Toriumi

  IEEE Transactions on Electron Devices 47 5 999 - 1005 2000年05月 [査読有り]
  
• Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits

  Ken Uchida Ken Uchida; Kazuya Matsuzawa Kazuya Matsuzawa; Junji Koga Junji Koga; Ryuji Ohba Ryuji Ohba; Shin-ichi Takagi Shin-ichi Takagi; Akira Toriumi Akira Toriumi

  Japanese Journal of Applied Physics 39 4S 2321 - 2321 2000年04月 [査読有り]
  
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon

  Junji Koga; Celine Vanderstraeten; Shin-ichi Takagi; Akira Toriumi

  Japanese Journal of Applied Physics 39 4S 2246 - 2246 2000年04月 [査読有り]
  
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi₂Ta₂O₉ Films and Ultra-Thin SiN Buffer Layers

  Takeshi Yamaguchi; Masato Koyama; Akira Takashima; Shin-ichi Takagi

  Japanese Journal of Applied Physics 39 4S 2058 - 2058 2000年04月 [査読有り]
  
• OPTIMIZED DESIGN OF THE SUBBAND STRUCTURE IN MOS INVERSION LAYERS FOR REALIZING HIGH PERFORMANCE AND LOW POWER Si MOSFETS

  SHIN-ICHI TAKAGI

  International Journal of High Speed Electronics and Systems 10 01 155 - 170 2000年03月 [査読有り][招待有り]
  
• Characterization of inversion-layer capacitance of holes in Si MOSFET's

  S. Takagi; M. Takayanagi; A. Toriumi

  IEEE Transactions on Electron Devices 46 7 1446 - 1450 1999年07月 [査読有り]
  
• A new I-V model for stress-induced leakage current including inelastic tunneling

  S. Takagi; N. Yasuda; A. Toriumi

  IEEE Transactions on Electron Devices 46 2 348 - 354 1999年02月 [査読有り]
  
• Experimental evidence of inelastic tunneling in stress-induced leakage current

  S. Takagi; N. Yasuda; A. Toriumi

  IEEE Transactions on Electron Devices 46 2 335 - 341 1999年02月 [査読有り]
  
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance

  Khairurrijal Miyazaki; Shin-ichi Takagi; Masataka Hirose

  Japanese Journal of Applied Physics 38 1A L30 - L32 1999年01月 [査読有り]
  
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films

  Takagi Shin-ichi; Koga Junji; Toriumi Akira

  Japanese journal of applied physics. Pt. 1, Regular papers & short notes 37 3 1289 - 1294 社団法人応用物理学会 1998年03月 [査読有り]
  
• Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors

  S. Takagi; J.L. Hoyt; K. Rim; J.J. Welser; J.F. Gibbons

  IEEE Transactions on Electron Devices 45 2 494 - 501 1998年02月 [査読有り]
  
• Two‐dimensional Carrier Transport in Si MOSFETs

  Shin-Ichi Takagi

  VLSI Design 8 1-4 1 - 11 1998年01月 [査読有り][招待有り]
  
• Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films

  Naoki Yasuda; Shin-ichi Takagi; Akira Toriumi

  Applied Surface Science 117-118 216 - 220 1997年06月 [査読有り]
  
• Diffusion and Segregation of Carbon in SiO₂ Films

  Ichiro Mizushima; Eiji Kamiya; Norihisa Arai; Masahisa Sonoda; Masahiko Yoshiki; Shin-ichi Takagi; Mikio Wakamiya; Shigeru Kambayashi; Yuichi Mikata; Sei-ichi Mori Kashiwagi

  Japanese Journal of Applied Physics 36 3S 1465 - 1465 1997年03月 [査読有り]
  
• Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides

  Hideki Satake; Naoki Yasuda; Shin-ichi Takagi; Akira Toriumi

  Applied Physics Letters 69 8 1128 - 1130 1996年08月 [査読有り]
  
• Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors

  Shin-ichi Takagi; Judy L. Hoyt; Jeffrey J. Welser; James F. Gibbons

  Journal of Applied Physics 80 3 1567 - 1577 1996年08月 [査読有り]
  
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure

  Koga Junji; Takagi Shin-ichi; Toriumi Akira

  Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35 2 1440 - 1444 INSTITUTE OF PURE AND APPLIED PHYSICS 1996年02月 [査読有り]
  
• Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors

  Kern Rim; S. Takagi; J. J. Welser; J. L. Hoyt; J. F. Gibbons

  MRS Proceedings 379 327 - 332 1995年12月 [査読有り]
  
• Quantitative understanding of inversion-layer capacitance in Si MOSFET's

  S. Takagi; A. Toriumi

  IEEE Transactions on Electron Devices 42 12 2125 - 2130 1995年 [査読有り]
  
• On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

  S. Takagi; A. Toriumi; M. Iwase; H. Tango

  IEEE Transactions on Electron Devices 41 12 2363 - 2368 1994年 [査読有り]
  
• On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

  S. Takagi; A. Toriumi; M. Iwase; H. Tango

  IEEE Transactions on Electron Devices 41 12 2357 - 2362 1994年 [査読有り]
  
• Observation of anisotropic impact ionization in Si MOSFET

  Shin-ichi Takagi; A Toriumi

  Semiconductor Science and Technology 7 3B B601 - B603 1992年03月 [査読有り]
  
• Interface Analysis of Al2O3/InP Structure Prepared by Molecular Beam Deposition

  Ohyama Hideaki; Narusawa Tadashi; Nakashima Hisao; Takagi Shin-ichi; Sugano Takuo

  Jpn J Appl Phys 26 10 1615 - 1621 社団法人応用物理学会 1987年10月 [査読有り]
  
• Effects on InP surface trap states of i n s i t u etching and phosphorus-nitride deposition

  Yoon-Ha Jeong; Shinichi Takagi; Fusako Arai; Takuo Sugano

  Journal of Applied Physics 62 6 2370 - 2375 1987年09月 [査読有り]
  
• Effective mobility of electrons in surface layer of semi-insulating and p-type InP substrates

  Shinichi Takagi; Takuo Sugano

  Journal of Applied Physics 62 6 2387 - 2391 1987年09月 [査読有り]
  
• 真空蒸着膜を用いたInP MIS形電界効果トランジスタの試作 (3-5族半導体デバイスと集積回路<特集>)

  高木 信一; 菅野 卓雄

  電子情報通信学会論文誌 C エレクトロニクス 70 5 625 - 630 電子情報通信学会 1987年05月 [査読有り]
  

講演・口頭発表等

• Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)

  Kasidit Toprasertpong; Eishin Nako; Shin Yi Min; Zuocheng Cai; Seong Kun Cho; Rikuo Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Reliability Physics Symposium Proceedings 2024年
• Inference and training in deep learning using a symmetric optical crossbar array

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2024 Optical Fiber Communications Conference and Exhibition, OFC 2024 - Proceedings 2024年
• Global optimization of universal unitary photonic integrated circuits

  Rui Tang; Hanzhi Tang; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE International Conference on Group IV Photonics GFP 2024年
• Reservoir computing using nonlinear polarization and charge dynamics of anti-ferroelectric HZO/Si FETs

  Shin Yi Min; Kasidit Toprasertpong; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024 2024年
• A single-wavelength non-coherent photonic matrix multiplication circuit for optical neural networks

  Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  CLEO: Science and Innovations, CLEO: S and I 2024 in Proceedings CLEO 2024, Part of Conference on Lasers and Electro-Optics 2024年
• Low-power Add-drop Microring Resonator Switch with Positive/negative Phase Tuning using InGaAsP/Si Hybrid MOS Phase Shifter

  Yosuke Wakita; Rui Tang; Hanzhi Tang; Shuhei Ohno; Tomohiro Akazawa; Yuto Miyatake; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings 2023年
• Hafnia-based ferroelectric devices for lower power memory and AI applications

  Shinichi Takagi; Kasidit Toprasertpong; Eishin Nako; Mitsuru Takenaka; Ryosho Nakane

  7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 2023年
• HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue

  Zuocheng Cai; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2023年
• Quantitative Understanding of Sub-Threshold Swing of Si MOSFETs at Cryogenic Temperatures Down to 4 K

  Shinichi Takagi; Min Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Hiroshi Oka; Takahiro Mori

  Proceedings of the IEEE Conference on Nanotechnology 2023年
• Compact Low-loss S-bends Designed by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2023 Conference on Lasers and Electro-Optics, CLEO 2023 2023年
• Reservoir Computing Utilizing Ferroelectric-Gate-Insulator FETs and Capacitors

  Shinichi Takagi; Kasidit Toprasertpong; Eishin Nako; Zeyu Wang; Rikuo Suzuki; Shin Yi Min; Mitsuru Takenaka; Ryosho Nakane

  Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023 2023年
• Compact Low-loss S-bends Designed by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  CLEO: Science and Innovations, CLEO:S and I 2023 2023年
• Scalable Programmable Photonic Integrated Circuits by III-V/Si Hybrid Integration

  Mitsuru Takenaka; Hanzhi Tang; Kouhei Watanabe; Takaya Ochiai; Tomohiro Akazawa; Masahiro Fujita; Chengli Chai; Mingzhi Huang; Yosuke Wakita; Yuto Miyatake; Shuhei Ohno; Kei Sumita; Stephane Monfray; Frederic Boeuf; Makoto Okano; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  Integrated Photonics Research, Silicon and Nanophotonics in Proceedings Advanced Photonics Congress 2023 - Part of Advanced Photonics Congress 2023 2023年
• Transparent in-line optical power monitor integrated with MOS Optical Phase Shifter using InP/Si Hybrid Integration

  Tomohiro Akazawa; Kei Sumita; Stéphane Monfray; Frédéric Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings 2023年
• Photonic Tensor Core with Low-insertion-loss, Non-volatile Ge2Sb2Te3S2Intensity Modulators

  Yuto Miyatake; Rui Tang; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings 2023年
• Low-capacitance Ultrathin InGaAs Membrane Photodetector on Si Slot Waveguide towards Receiver-less System

  T. Akazawa; D. Wu; K. Sumita; N. Sekine; M. Okano; K. Toprasertpong; S. Takagi; M. Takenaka

  Digest of Technical Papers - Symposium on VLSI Technology 2022年
• Experimental demonstration of novel scheme of HZO/Si FeFET reservoir computing with parallel data processing for speech recognition

  E. Nako; K. Toprasertpong; R. Nakane; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2022年
• III-V/Si hybrid integration for scalable optical switching and computing

  Mitsuru Takenaka; Hanzhi Tang; Kouhei Watanabe; Takaya Ochiai; Tomohiro Akazawa; Yuto Miyatake; Shuhei Ohno; Kei Sumita; Stephane Monfray; Frederic Boeuf; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  OECC/PSC 2022 - 27th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing 2022 2022年
• Extremely-Thin Channel FET Technology for Advanced Logic CMOS

  Shinichi Takagi; Kei Sumita; Chia Tsong Chen; Xueyang Han; Kasidit Toprasertpong; Mitsuru Takenaka

  2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 2022年
• Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating

  Taichiro Fukui; Kei Sumita; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Takuo Tanemura

  Conference Digest - IEEE International Semiconductor Laser Conference 2022年
• Crossbar Wiring for III-V/Si MOS Optical Phase Shifters with Diode Selectors

  Hanzhi Tang; Rui Tang; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2022 European Conference on Optical Communication, ECOC 2022 2022年
• (Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

  Shinichi Takagi; Kasidit Toprasertpong; Kent Tahara; Eishin Nako; Ryosho Nakane; Zeyu Wang; Xuan Luo; Tsung-En Lee; Mitsuru Takenaka

  ECS Meeting Abstracts 2021年10月 The Electrochemical Society
  
• Energy-Efficient Reliable HZO FeFET Computation-in-Memory with Local Multiply Global Accumulate Array for Source-Follower Charge-Sharing Voltage Sensing

  Chihiro Matsui; Kasidit Toprasertpong; Shinichi Takagi; Ken Takeuchi

  IEEE Symposium on VLSI Circuits, Digest of Technical Papers 2021年06月 Institute of Electrical and Electronics Engineers Inc.
  
• Monolithic Integration of III-V/Si Hybrid MOS Optical Phase Shifter and InGaAs Membrane Photodetector

  Shuhei Ohno; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2021 Optical Fiber Communications Conference and Exhibition, OFC 2021 - Proceedings 2021年06月 Institute of Electrical and Electronics Engineers Inc.
  
• Thermo-optic Mach-Zehnder Interferometer Integrated with Si PN Diode Switch for Bipolar Optical Phase Control

  Hanzhi Tang; Shuhei Ohno; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2021 Optical Fiber Communications Conference and Exhibition, OFC 2021 - Proceedings 2021年06月 Institute of Electrical and Electronics Engineers Inc.
  
• Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  SID Symposium Digest of Technical Papers 2021年05月 Wiley
  
• Advanced CMOS technologies for ultra-low power logic and AI applications

  Shinichi Takagi; Kasidit Toprascrtpong; Kimihiko Kato; Kei Sumita; Eishin Nako; Ryosho Nakane; Kwang-Won Jo; Mitsuru Takenaka

  2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 2021年04月 Institute of Electrical and Electronics Engineers Inc.
  
• Si Microring Resonator Switch Based on III-V/Si Hybrid MOS Optical Phase Shifter Using Ultrathin InP Membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Hanzhi Tang; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020 2020年12月 Institute of Electrical and Electronics Engineers Inc.
  
• Demonstration of Classification Task Using Optical Neural Network Based on Si Microring Resonator Crossbar Array

  Shuhei Ohno; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020 2020年12月 Institute of Electrical and Electronics Engineers Inc.
  
• Mid-infrared Non-volatile Compact Optical Phase Shifter Based on Ge Sb Te

  Yuto Miyatake; Chong Pei Ho; Prakash Pitchappa; Ranjan Singh; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020 2020年12月 Institute of Electrical and Electronics Engineers Inc.
  
• Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications

  E. Nako; K. Toprasertpong; R. Nakane; Z. Wang; Y. Miyatake; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2020年06月 Institute of Electrical and Electronics Engineers Inc.
  
• Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2*1013cm-2

  K. Toprasertpong; Z. -Y. Lin; T. -E. Lee; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2020年06月 Institute of Electrical and Electronics Engineers Inc.
  
• Active-Passive Integration on III-V-OI Platform using Quantum Well Intermixing

  Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2020年05月 Institute of Electrical and Electronics Engineers Inc.
  
• Monolithic Germanium PIN Waveguide Photodetector Operating at 2 μm Wavelengths

  Ziqiang Zhao; Chongpei Ho; Qiang Li; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings 2020年03月 Institute of Electrical and Electronics Engineers Inc.
  
• Low Parasitic Capacitance III-V/Si Hybrid MOS Optical Modulator toward High-speed Modulation

  Qiang Li; Chong Pei Ho; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings 2020年03月
• Taper-Less III-V/Si Hybrid MOS Optical Phase Shifter using Ultrathin InP Membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings 2020年03月
• n-Ge MOS構造における異なる界面層へのキャリアトラップ特性の比較

  柯 夢南; 竹中 充; 高木 信一

  応用物理学会学術講演会講演予稿集 2020年02月 公益社団法人 応用物理学会
  
• n-Ge MOS絶縁膜中の異なるキャリア捕獲トラップの峻別手法の提案

  柯 夢南; 竹中 充; 高木 信一

  応用物理学会学術講演会講演予稿集 2020年02月 公益社団法人 応用物理学会
  
• プラズマ酸化により作製したAl₂O₃/GeO_x/n-Ge MOS界面における遅い準位の特性

  柯 夢南; 竹中 充; 高木 信一

  応用物理学会学術講演会講演予稿集 2020年02月 公益社団法人 応用物理学会
  
• Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

  K. Toprasertpong; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2019年12月 Institute of Electrical and Electronics Engineers Inc.
  
• Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation

  K. W. Jo; C. M. Lim; W. K. Kim; K. Toprasertpong; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2019年12月
• Group IV/oxide semiconductor bi-layer tunneling FET

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 2019年10月 Institute of Electrical and Electronics Engineers Inc.
  
• Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers

  Kei Sumita; Jun Takeyasu; Kimihiko Kato; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 2019年10月 Institute of Electrical and Electronics Engineers Inc.
  
• Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation

  T. E. Lee; K. Kato; M. Ke; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2019年06月
• Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology

  Cheol-Min Lim; Mitsuru Takenaka; Shinichi Takagi

  2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 2019年03月 Institute of Electrical and Electronics Engineers Inc.
  
• Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  2019 Electron Devices Technology and Manufacturing Conference (EDTM) 2019年03月 IEEE
  
• Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces

  M. Ke; P. Cheng; K. Kato; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2019年01月
• Efficient germanium variable optical attenuator at 1.95μm wavelength using spin-on-glass doping

  Ziqiang Zhao; Chong Pei Ho; S. Takagi; M. Takenaka

  45th European Conference on Optical Communication (ECOC 2019) 2019年 Institution of Engineering and Technology
  
• Si Racetrack Modulator with III-V/Si Hybrid MOS Optical Phase Shifter

  Qiang Li; ChongPei Ho; S. Takagi; M. Takenaka

  45th European Conference on Optical Communication (ECOC 2019) 2019年 Institution of Engineering and Technology
  
• Coupled-resonator-induced-transparency on germanium-on-insulator mid-infrared platform

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019) 2019年
• Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion

  Qiang Li; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2019年
• Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter

  Qiang Li; Jae-Hoon Han; Tsung-En Lee; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年
• Numerical Analysis of III-V/Si Hybrid MOS Microdisk Modulator

  Shuhei Ohno; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年
• Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator

  Naoki Sekine; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年
• Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method

  Kei Sumita; Jun Takeyasu; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年
• Advanced MOS Device Technology for Low Power Logic LSI

  Shinichi Takagi; Kimihiko Kato; Kei Sumita; Kwangwon Jo; Cheol-Min Lim; Ryotaro Takaguchi; Dae-Hwan Ahn; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka

  PROCEEDINGS OF THE 2019 26TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2019) 2019年
• Low-Power Ge Thermo-Optic Phase Shifter on Ge-on-Insulator Platform

  Takumi Fujigaki; Shinichi Takagi; Mitsuru Takenaka

  European Conference on Optical Communication, ECOC 2018年11月 Institute of Electrical and Electronics Engineers Inc.
  
• III-V/Si Hybrid MOS Optical Phase Modulator for Si Photonic Integrated Circuits

  Mitsuru Takenaka; Jaehoon Han; Frederic Boeuf; Jinkwon Park; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  European Conference on Optical Communication, ECOC 2018年11月
• Ge MOSFETへの期待と課題

  高木 信一; 曺 光元; 金 佑彊; 柯 夢南; 加藤 公彦; 竹中 充

  応用物理学会学術講演会講演予稿集 2018年03月 公益社団法人 応用物理学会
  
• p型GOI基板上に作製した pチャネルGOIトンネルFETの電気特性

  高口 遼太郎; 加藤 公彦; 柯 夢南; 竹中 充; 高木 信一

  応用物理学会学術講演会講演予稿集 2018年03月 公益社団法人 応用物理学会
  
• ALD high-k/GeO_x/Ge界面の遅い準位の物理的起源

  柯 夢南; 加藤 公彦; 竹中 充; 高木 信一

  応用物理学会学術講演会講演予稿集 2018年03月 公益社団法人 応用物理学会
  
• MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI.

  Shinichi Takagi; Array; Wu-Kang Kim; Kwangwon Jo; Ryo Matsumura; Ryotaro Takaguchi; Dae-Hwan Ahn,Array; Mitsuru Takenaka

  48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018 2018年 IEEE
  
• Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation

  Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018) 2018年
• Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter

  Qiang Li; Jae-Hoon Han; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) 2018年
• High-efficiency, Low-loss Optical Phase Modulator based on III-V/Si Hybrid MOS Capacitor

  Mitsuru Takenaka; Jae-Hoon Han; Jin-Kwon Park; Frederic Boeuf; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) 2018年
• Si Hybrid MOS Optical Phase Shifter for Switching and Computing

  Mitsuru Takenaka; Jaehoon Han; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Shinichi Takagi

  2018 PHOTONICS IN SWITCHING AND COMPUTING (PSC) 2018年
• High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control

  W. K. Kim; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2017年07月 Institute of Electrical and Electronics Engineers Inc.
  
• III-V-based low power CMOS devices on Si platform

  S. Takagi; D. H. Ahn; T. Gotow; M. Noguchi; K. Nishi; S. H. Kim; M. Yokoyama; C. Y. Chang; S. H. Yoon; C. Yokoyama; M. Takenaka

  2017 IEEE International Conference on IC Design and Technology, ICICDT 2017 2017年07月 Institute of Electrical and Electronics Engineers Inc.
  
• In content dependence of pre-treatment effects on Al2O3/InxGa1-xAs MOS interface properties

  C. Yokoyama; C. Y. Chang; M. Takenaka; S. Takagi

  2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings 2017年06月 Institute of Electrical and Electronics Engineers Inc.
  
• Tunneling MOSFET technologies using III-V/Ge materials

  S. Takagi; D. H. Ahn; M. Noguchi; T. Gotow; K. Nishi; M. Kim; M. Takenaka

  Technical Digest - International Electron Devices Meeting, IEDM 2017年01月 Institute of Electrical and Electronics Engineers Inc.
  
• Optimization of modulation efficiency of InGaAsP/Si hybrid MOS optical modulator

  Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  Optics InfoBase Conference Papers 2017年 OSA - The Optical Society
  
• Effects of Ge-source impurity concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs

  Tae-Eon Bae; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2017 FIFTH BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS & STEEP TRANSISTORS WORKSHOP (E3S) 2017年
• High-Efficiency O-Band Mach-Zehnder Modulator based on InGaAsP/Si Hybrid MOS Capacitor

  Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2017年
• Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) 2017年
• Monolithic Integration of InGaAsP MZI Modulator and InGaAs Driver MOSFET using III-V CMOS Photonics

  Jin-Kwon Park; Shinichi Takagi; Mitsuru Takenaka

  2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2017年
• III-V/Ge MOSFETs and TFETs for Ultra-Low Power Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) 2017年
• Ultra-low power MOSFET and Tunneling FET technologies using III-V and Ge

  Shinichi Takagi; Mitsuru Takenaka

  2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) 2017年
• Near-infrared and mid-infrared integrated photonics based on Ge-on-insulator platform

  Mitsuru Takenaka; Jian Kang; Shinichi Takagi

  30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) 2017年
• Impact of La2O3/InGaAs MOS Interface on InGaAs MOSFET Performance and its Application to InGaAs Negative Capacitance FET

  C. -Y. Chang; K. Endo; K. Kato; C. Yokoyama; M. Takenaka; S. Takagi

  2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2016年
• Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al2O3/p-Si MOS capacitor formed by wafer bonding

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 2016年
• Design and Characterization of Ge Passive Waveguide Components on Ge-on-Insulator for Mid-Infrared Photonics

  Jian Kang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2016年
• III-V MOS device technologies for advanced CMOS and tunneling FET

  Shinichi Takagi; Mitsuru Takenaka

  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016年
• Heterogeneous integration of SiGe/Ge and III-V for Si photonics

  Mitsuru Takenaka; Younghyun Kim; Jaehoon Han; Jian Kang; Yuki Ikku; Yongpeng Cheng; Jinkwon Park; Shinichi Takagi

  SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS V 2016年
• Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2016年
• Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform

  Mitsuru Takenaka; Shinichi Takagi

  2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2016年
• Improvement in the modulation bandwidth of MOS optical modulators by using p-SiGe slab

  Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  Asia Communications and Photonics Conference, ACPC 2015 2015年12月 Optical Society of America (OSA)
  
• High I<inf>on</inf>/I<inf>off</inf> Ge-source ultrathin body strained-SOI tunnel FETs - Impact of channel strain, MOS interfaces and back gate on the electrical properties

  Minsoo Kim; Yuki Wakabayashi; Ryosho Nakane; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2015年02月 Institute of Electrical and Electronics Engineers Inc.
  
• CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si

  M. Takenaka; Y. Kim; J. Han; J. Kang; Y. Ikku; Y. Cheng; J. K. Park; S. H. Kim; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2015年02月 Institute of Electrical and Electronics Engineers Inc.
  
• High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

  K. Nishi; M. Yokoyama; H. Yokoyama; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) 2015年
• Impact of GeOx passivation on Dark Current for Wafer-bonded Ge-on-Insulator Metal-Semiconductor-Metal Photodetector

  Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 2015年
• SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2015年
• Ge/III-V MOS Device Technologies for Low Power Integrated Systems

  Shinichi Takagi; Mitsuru Takenaka

  ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 2015年
• Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 2015年
• III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications

  Shinichi Takagi; Mitsuru Takenaka

  2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015年
• Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut (TM) GeOI substrates

  Xiao Yu; Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) 2015年
• Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm

  Xiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2015年
• Low-resistance lateral junction formation for laser diodes on III-V CMOS photonics platform

  Y. Ikku; M. Takenaka; S. Takagi

  Conference Digest - IEEE International Semiconductor Laser Conference 2014年12月 Institute of Electrical and Electronics Engineers Inc.
  
• High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si

  S. H. Kim; Y. Ikku; M. Yokoyama; R. Nakane; J. Li; Y. C. Kao; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2014年09月 Institute of Electrical and Electronics Engineers Inc.
  
• III-V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si

  M. Yokoyama; H. Yokoyama; M. Takenaka; S. Takagi

  2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers 2014年
• The effects of biaxially-tensile strain to properties of Si/SiO2 interface states generated by electrical stress

  W. L. Cai; M. Takenaka; S. Takagi

  IEEE International Reliability Physics Symposium Proceedings 2014年 Institute of Electrical and Electronics Engineers Inc.
  
• Waveguide InGaAs photodetector with Schottky barrier enhancement layer on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014年
• Surface Orientation Depdendence of Electro-optic Effects in InGaAsP for Lateral PIN-junction InGaAsP Photonic-wire Modulators

  Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014年
• Ultra-small, Low-crosstalk, Electrically-driven InGaAsP Photonic-wire Optical Switches on III-V CMOS Photonics Platform

  Yuki Ikku; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2014年
• High I-on/I-off Ge-source ultrathin body strained-SOI Tunnel FETs

  Minsoo Kim; Yuki Wakabayashi; Ryosho Nakane; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2014年
• Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 2014年
• Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2014年
• Multi-bandgap III-V on Insulator Wafer fabricated by Quantum Well Intermixing for III-V CMOS Photonics Platform

  Misa Kuramochi; Mitsuru Takenaka; Yuki Ikku; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014年
• Thin body GaSb-OI p-MOSFETs on Si wafers fabricated by direct wafer bonding

  Koichi Nishi; Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014年
• III-V/Ge CMOS Device Technologies for Future Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) 2014年
• Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates

  Xiao Yu; Rui Zhang; Jian Kang; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) 2014年
• Low-crosstalk 2 2 InGaAsP Photonic-wire Optical Switches using III-V CMOS Photonics Platform

  Y. Ikku; M. Hata; M. Noguchi; T. Osada; S. Takagi; M. Takenaka; M. Yokoyama; O. Ichikawa

  39th European Conference and Exhibition on Optical Communication (ECOC 2013) 2013年 Institution of Engineering and Technology
  
• Ultra-thin body MOS device technologies using high mobility channel materials

  S. Takagi; S. H. Kim; M. Yokoyama; W. K. Kim; R. Zhang; M. Takenaka

  2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 2013年 IEEE Computer Society
  
• High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability

  Sang Hyeon Kim; M. Yokoyama; R. Nakane; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2013年
• Low temperature surface passivation for carrier injection type SiGe optical modulator

  Younghyun Kim; Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP 2013年
• Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation

  Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP 2013年
• Evaluation of chemical potential for graphene optical modulators based on the semiconductor-metal transition

  T. Kayoda; J. H. Han; M. Takenaka; S. Takagi

  IEEE International Conference on Group IV Photonics GFP 2013年
• Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

  S. H. Kim; M. Yokoyama; R. Nakane; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2013年
• Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs

  SangHyeon Kim; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenakal; Shinichi Takagi

  2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) 2013年
• High I-on/I-off and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions

  Munetaka Noguchi; SangHyeon Kim; Masafumi Yokoyama; SangMin Ji; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013年
• MOS interface engineering for high-mobility Ge CMOS

  Mitsuru Takenaka; Rui Zhang; Shinichi Takagi

  2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) 2013年
• Sulfur cleaning for (100) (111)A and (111)B InGaAs surfaces with in content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

  Masafumi Yokoyama; Noriyuki Taoka; Rena Suzuki; Osamu Ichikawa; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2013年
• Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Yuji Asakura; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2013年
• Sub-60 nm deeply-scaled channel length extremely-thin body In xGa 1-xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

  S. H. Kim; M. Yokoyama; N. Taoka; R. Nakane; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2012年
• MOS interface and channel engineering for high-mobility Ge/III-V CMOS

  S. Takagi; R. Zhang; S. H. Kim; N. Taoka; M. Yokoyama; J. K. Suh; R. Suzuki; M. Takenaka

  Technical Digest - International Electron Devices Meeting, IEDM 2012年
• Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators

  J. H. Han; R. Zhang; T. Osada; M. Hata; M. Takenaka; S. Takagi

  IEEE International Conference on Group IV Photonics GFP 2012年
• Numerical analysis of strained SiGe-based carrier-injection optical modulators

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP 2012年
• High mobility CMOS technologies using III-V/Ge channels on Si platform

  Shinichi Takagi; Mitsuru Takenaka

  2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 2012年
• Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES 2012年
• Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High N-s Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi

  2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2012年
• Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering

  S. H. Kim; M. Yokoyama; N. Taoka; R. Nakane; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2011年
• III-V on silicon for high-speed electronics and CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011年
• Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs

  Maeda T; Urabe Y; Itatani T; Ishii H; Miyata N; Yasuda T; Yamada H; Hata M; Yokoyama M; Takenaka M; Takagi S

  Digest of Technical Papers - Symposium on VLSI Technology 2011年
• Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys

  Kim S.H; Yokoyama M; Taoka N; Iida R; Lee S; Nakane R; Urabe Y; Miyata N; Yasuda T; Yamada H; Fukuhara N; Hata M; Takenaka M; Takagi S

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011年
• High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

  Kim S.H; Yokoyama M; Taoka N; Iida R; Lee S; Nakane R; Urabe Y; Miyata N; Yasuda T; Yamada H; Fukuhara N; Hata M; Takenaka M; Takagi S

  Digest of Technical Papers - Symposium on VLSI Technology 2011年
• Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  Device Research Conference - Conference Digest, DRC 2011年
• High mobility material channel CMOS technologies based on heterogeneous integration

  Shinichi Takagi; Mitsuru Takenaka

  Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011 2011年
• Advanced CMOS technologies using III-V/Ge channels

  Shinichi Takagi; Mitsuru Takenaka

  International Symposium on VLSI Technology, Systems, and Applications, Proceedings 2011年
• Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation

  N. Taoka; M. Yokoyama; S. H. Kim; R. Suzuki; R. Iida; S. Lee; T. Hoshii; W. Jevasuwan; T. Maeda; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2011年
• CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

  M. Yokoyama; S. H. Kim; R. Zhang; N. Taoka; Y. Urabe; T. Maeda; H. Takagi; T. Yasuda; H. Yamada; O. Ichikawa; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2011年
• ALD Al 2O 3 activated direct wafer bonding for 111-V CMOS photonics platform

  Y. Ikku; M. Yokoyama; R. Iida; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011年
• Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction

  M. Takenaka; K. Morii; M. Sugiyama; Y. Nakano; S. Takagi

  IEEE International Conference on Group IV Photonics GFP 2011年
• Fabrication of Ge-rich SiGe-On-Insulator Waveguide for Optical Modulator

  Younghyun Kim; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  2011 IEEE PHOTONICS CONFERENCE (PHO) 2011年
• 37th IEEE International SOI Conference Tempe Mission Palms Hotel and Conference Center, Tempe, Arizona, USA, 3-6 October, 2011 (III-V/Ge)-On-Insulator CMOS Technology

  Shinichi Takagi

  2011 IEEE INTERNATIONAL SOI CONFERENCE 2011年
• 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

  Rui Zhang; Noriyuki Taoka; Po-Chin Huang; Mitsuru Takenaka; Shinichi Takagi

  2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2011年
• Origins for electron mobility improvement in InGaAs MISFETs with (NH4)2S treatment

  Urabe Y; Miyata N; Yasuda T; Ishii H; Itatani T; Yamada H; Fukuhara N; Hata M; Yokoyama M; Takenaka M; Takagi S

  Materials Research Society Symposium Proceedings 2010年
• 微小領域選択MOVPEを用いたSi上InGaAsの形状均一化に向けたSi表面状態とInAs成長の関係

  出浦 桃子; 近藤 佳幸; 竹中 充; 高木 信一; 霜垣 幸浩; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 2010年 公益社団法人 化学工学会
  
• 成長領域狭窄化選択MOVPEによるSi上InGaAsの高横/縦比成長

  近藤 佳幸; 出浦 桃子; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 2010年 公益社団法人 化学工学会
  
• Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy

  S. H. Kim; M. Yokoyama; N. Taoka; R. Iida; S. Lee; R. Nakane; Y. Urabe; N. Miyata; T. Yasuda; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST 2010年
• Self-aligned metal Source/Drain InxGa1-xas n-MOSFETs using Ni-InGaAs alloy

  S. H. Kim; M. Yokoyama; N. Taoka; R. Iida; S. Lee; R. Nakane; Y. Urabe; N. Miyata; T. Yasuda; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2010年
• Advanced non-Si channel CMOS technologies on Si platform

  Shinichi Takagi; Mitsuru Takenaka

  ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 2010年
• Relationships between interface structures and electrical properties in the high-κ/III-V system

  Tetsuji Yasuda; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Taro Itatani; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Akihiro Ohtake; Masafumi Yokoyama; Takuya Hoshii; Takashi Haimoto; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  Materials Research Society Symposium Proceedings 2010年
• High mobility III-V-on-insulator MOSFETs on Si with ALD-Al 2O3 BOX layers

  M. Yokoyama; Y. Urabe; T. Yasuda; H. Takagi; H. Ishii; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2010年
• Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding

  M. Yokoyama; R. Iida; S. H. Kim; N. Taoka; Y. Urabe; T. Yasuda; H. Takagi; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2010年
• Impact of Ge nitride interfacial layers on performance of Metal Gate/High-k Ge-nMISFETs

  Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 2010年
• Ultrasmall Arrayed Waveguide Grating Multiplexer using InP-based Photonic Wire Waveguide on Si wafer for III-V CMOS photonics

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC 2010年
• Correlation between Channel Mobility Improvements and Negative V-th Shifts in III-V MISFETs: Dipole Fluctuation as New Scattering Mechanism

  Yuji Urabe; Noriyuki Miyata; Hiroyuki Ishii; Taro Itatani; Tatsuro Maeda; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST 2010年
• III-V-SEMICONDUCTOR-ON-INSULATOR MISFETs ON Si WITH BURIED SiO2 AND Al2O3 LAYERs BY DIRECT WAFER BONDING

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Yuji Urabe; Hiroyuki Ishii; Noriyuki Miyata; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2010年
• Evidence of Correlation between Surface Roughness and Interface States Generation in Unstrained and Strained-Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 2010年
• Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上

  出浦 桃子; 星井 拓也; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 2009年 公益社団法人 化学工学会
  
• MOVPE微小領域選択成長におけるSi上InAs核発生の成長条件依存性

  近藤 佳幸; 出浦 桃子; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 2009年 公益社団法人 化学工学会
  
• 微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

  出浦 桃子; 近藤 佳幸; 星井 拓也; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 2009年 公益社団法人 化学工学会
  
• Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe

  M. Deura; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2009年
• High mobility metal S/D III-V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding

  M. Yokoyama; T. Yasuda; H. Takagi; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2009年
• High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping

  Kiyohito Morii; Takashi Iwasaki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2009年
• High Mobility Channel CMOS Technologies for Realizing High Performance LSI's

  Shinichi Takagi

  PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE 2009年
• SOURCE/DRAIN FORMATION BY USING EPITAXIAL REGROWTH OF N plus InP FOR III-V NMOSFETS

  Mitsuru Takenaka; Koji Takeda; Takuya Hoshii; Takuo Tanemura; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 2009年
• Devices structures and carrier transport properties of advanced CMOS using high mobility channels

  Shinichi Takagi; Tsutomu Tezuka; Toshifumi Irisawa; Shu Nakaharai; Toshinori Numata; Koji Usuda; Naoharu Sugiyama; Masato Shichijo; Ryosho Nakane; Satoshi Sugahara

  Electronic Device Architectures for the Nano-CMOS Era: From Ultimate CMOS Scaling to Beyond CMOS Devices 2008年10月
• Effects of gate current stress on electrical characteristics

  Masatomi Harada; Noriyuki Taoka; Toyoji Yamamoto; Yoshimi Yamashita; Osamu Kiso; Naoharu Sugiyama; Shin-ichi Takagi

  ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON 2008年
• Ge photodetector integrated with ge-on-insulator MOSFET by using oxidation condensation technique

  M. Takenaka; S. Tanabe; S. Dissanayake; S. Sugahara; S. Takagi

  Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2008年
• 微小領域選択成長によるSi上III/V化合物半導体層の形成

  出浦 桃子; 星井 拓也; 杉山 正和; 中根 了昌; 菅原 聡; 竹中 充; 高木 信一; 中野 義昭

  化学工学会 研究発表講演要旨集 2008年 公益社団法人 化学工学会
  
• Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD)

  K. Usuda; S. Nakaharai; T. Irisawa; Y. Moriyama; N. Hirashita; T. Tezuka; Y. Yamashita; N. Taoka; O. Kiso; T. Yamamoto; N. Sugiyama; S. Takagi

  IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 2008年
• Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO(2) Interfacial Layers

  Yosuke Nakakita; Ryosho Nakane; Takashi Sasada; Hiroshi Matsubara; Mitsuru Takenaka; Shinichi Takagi

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST 2008年
• Advanced nano CMOS platform using carrier-transport-enhanced channels

  Shinichi Takagi

  2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM 2008年
• Understanding and Engineering of Carrier Transport in Advanced MOS Channels

  Shinichi Takagi

  SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2008年
• Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST 2008年
• High performance 60 nm gate length germanium p-MOSFETs with Ni germanide metal source/drain

  Toyoji Yamamoto; Yoshimi Yamashita; Masatomi Harada; Noriyuki Taoka; Keiji Ikeda; Kunihiro Suzuki; Osamu Kiso; Naoharu Sugiyama; Shin-ichi Takagi

  2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 2007年
• Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices

  S. Dissanayake; S. Sugahara; M. Takenaka; S. Takagi

  ICIIS 2007 - 2nd International Conference on Industrial and Information Systems 2007, Conference Proceedings 2007年
• Observation of mobility enhancement in strained Si and sige tri-gate MOSFETs with multi-nanowire channels trimmed by hydrogen thermal etching

  T. Tezuka; E. Toyoda; S. Nakaharai; T. Irisawa; N. Hirashita; Y. Moriyama; N. Sugiyama; N. Taoka; Y. Yamashita; O. Kiso; M. Harada; T. Yamamoto; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2007年
• Examination of additive mobility enhancements for uniaxial stress combined with biaxially strained Si, biaxially strained SiGe and Ge channel MOSFETs

  O. Weber; T. Irisawa; T. Numata; M. Harada; N. Taoka; Y. Yamashita; T. Yamamoto; N. Sugiyama; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2007年
• Physical understanding of strain effects on gate oxide reliability of MOSFETs

  T. Irisawa; T. Numata; E. Toyoda; N. Hirashita; T. Tezuka; N. Sugiyama; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2007年
• Carrier-transport-enhanced CMOS using new channel materials and structures

  Shinichi Takagi; Toshifiumi Irisawa; Tsutomu Tezuka; Shu Nakaharai; Koji Usuda; Norio Hirashita; Mitsuru Takenaka; Naoharu Sugiyama

  2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 2007年
• Electron transport properties of ultrathin-body and tri-gate SOI nMOSFETs with biaxial and uniaxial strain

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Naoharu Sugiyama; Shin-Ichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2006年
• Relationship between hole mobility and current drive enhancement in uniaxially strained thin-body SiGe-on-Insulator pMOSFETs

  Tsutomu Tezuka; Toshifumi Irisawa; Toshinori Numata; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Koji Usuda; Naoharu Sugiyama; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2006年
• Strain relaxation in strained-Si layer on SiGe-on-insulator substrate

  Norio Hirashita; Yoshihiko Moriyama; Eiji Toyoda; Naoharu Sugiyama; Shin-Ichi Takagi

  Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest 2006年 IEEE Computer Society
  
• Generation of crystal defects in Ge-on-Insulator (GOI) layers in Ge-condensation process

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest 2006年
• Novel anisotropie strain engineering on (110)-surface SOI CMOS devices using combination of local/global strain techniques

  T. Mizuno; T. Irisawa; N. Hirashita; Y. Moriyama; T. Numata; T. Tezuka; N. Sugiyama; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2006年
• Strained-SOI technology for high-speed CMOS operation

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  International Symposium on VLSI Technology, Systems, and Applications, Proceedings 2006年
• Mobility-enhanced CMOS technologies using strained Si/SiGe/Ge channels

  S. Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Numata; K. Usuda; T. Maeda; N. Sugiyama

  2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 2006年
• High performance CMOS device technologies in nano CMOS era

  Shinichi Takagi

  IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS 2006年
• High performance multi-gate pMOSFETs using uniaxially-strained SGOI channels

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Shu Nakaharai; Norio Hirashita; Naoharu Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2005年
• High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Norio Hirashita; Naonaru Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2005年
• A new strained-SOI/GOI dual CMOS technology based on local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Naoharu Sugiyama; Tomohisa Mizuno; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2005年
• Selectively-formed high mobility SiGe-on-insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2004年 Institute of Electrical and Electronics Engineers Inc.
  
• Effect of growth temperature on lattice relaxation during SiGe growth on Si substrate

  Y. Moriyama; N. Sugiyama; N. Hirashita; S. Nakaharai; S. Takagi

  Proceedings - Electrochemical Society 2004年
• Device characterizations and physical models of strained-Si channel CMOS

  Takagi, S.; Maeda, T.; Numata, I.; Mizuno, T.; Usuda, K.; Tanabe, A.; Tezuka, T.; Nakaharai, S.; Koga, J.; Irisawa, T.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; ieee,

  ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES 2004年
• High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2004年
• Formation mechanism of Ge-on-Insulator layers by Ge-condensation technique

  S. Nakaharai; T. Tezuka; N. Sugiyama; S. Takagi

  Proceedings - Electrochemical Society 2004年
• Strained-Si/SiGe-On-Insulator CMOS technology as a platform of device performance boosters

  S. Takagi; T. Mizuno; T. Tezuka; N. Sugiyama; T. Numata; K. Usuda; Y. Moriyama; S. Nakaharai; J. Koga; A. Tanabe; N. Hirashita; T. Irisawa; T. Maeda

  Proceedings - Electrochemical Society 2004年
• Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

  N. Hirashita; T. Numata; T. Tezuka; N. Sugiyama; K. Usuda; T. Irisawa; A. Tanabe; Y. Moriyama; S. Nakaharai; S. Takagi; E. Toyoda; Y. Miyamura

  Proceedings - IEEE International SOI Conference 2004年
• Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

  Koji Usuda; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Materials Research Society Symposium - Proceedings 2003年
• Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and delta T-SOI-induced scattering

  K Uchida; J Koga; S Takagi

  2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 2003年
• Formation of Strained Si / SiGe on Insulator Structure with a (110) Surface

  N. Sugiyama; T. Mizuno; Y. Moriyama; S. Nakaharai; T. Tezuka; S. Takagi

  IEEE International SOI Conference 2003年
• Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

  K Uchida; H Watanabe; J Koga; A Kinoshita; S Takagi

  2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2003年
• Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD)

  Koji Usuda; T. Numata; T. Tezuka; N. Sugiyama; Y. Moriyama; S. Nakaharai; S. Takagi

  IEEE International SOI Conference 2003年
• (110)-Surface Strained-SOI CMOS Devices with Higher Carrier Mobility

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2003年
• Physical Mechanism for High Hole Mobility in (110)-Surface Strained- and Unstrained-MOSFETs

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Technical Digest - International Electron Devices Meeting 2003年
• Channel Structure Design, Fabrication and Carrier Transport Properties of Strained-Si/SiGe-On-Insulator (Strained-SOI) MOSFETs

  S. Takagi; T. Mizuno; T. Tezuka; N. Sugiyama; T. Numata; K. Usuda; Y. Moriyama; S. Nakaharai; J. Koga; A. Tanabe; N. Hirashita; T. Maeda

  Technical Digest - International Electron Devices Meeting 2003年
• Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

  K Uchida; H Watanabe; A Kinoshita; J Koga; T Numata; S Takagi

  INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST 2002年
• Device design for subthreshold slope and threshold voltage control in sub-100 nm fully-depleted SOI MOSFETs

  T Numata; K Uchida; J Koga; S Takagi

  2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 2002年
• Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

  Ken Uchida; Junji Koga; Ryuji Ohba; Toshinori Numata; Shin-ichi Takagi

  Technical Digest - International Electron Devices Meeting 2001年
• High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology

  Mizuno T; Takagi S; Sugiyama N; Koga J; Tezuka T; Usuda K; Hatakeyama T; Kurobe A; Toriumi A

  Technical Digest - International Electron Devices Meeting 1999年
• Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

  K. Uchida; J. Koga; R. Ohba; S. Takagi; A. Toriumi

  Annual Device Research Conference Digest 1999年 IEEE
  

MISC

• Ultrathin-Body Ge-on-Insulator Mosfet and TFET Technologies

  Takagi Shinichi; Kim Wu-Kang; Jo Kwang-Won; Matsumura Ryo; Takaguchi Ryotaro; Katoh Takumi; Bae Tae-Eon; Kato Kimihiko; Takenaka Mitsuru Meeting Abstracts 86 (31) 1042 -86 2018年 [査読有り]
  
• Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment

  Kato Kimihiko; Matsui Hiroaki; Tabata Hitoshi; Mitsuru Takenaka; Shinichi Takagi Procedding of the 2017 IEEE International Electron Devices Meeting (IEDM) 15.6.1 -15.6.4 2018年01月 [査読有り]
  
• III-V/Ge-based tunneling MOSFET

  Takagi S; Ahn D-H; Gotow T; Nishi K; Bae T-E; Katoh T; Matsumura R; Takaguchi R; Kato K; Takenaka M Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), 2017 Fifth Berkeley Symposium on 1 2017年 [査読有り]
  
• 極低電力LSIのための先端Ge MOSデバイス技術

  高木 信一; 玉 虓; 張 睿; 柯 夢南; 竹中 充 半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology 80 53 -56 2016年08月
• CI-4-3 Zn拡散ソースを用いたプレーナ型InGaAsトンネルFET(CI-4.低消費電力スティープスロープFET技術の現状と展望,依頼シンポジウム,ソサイエティ企画)

  高木 信一; 野口 宗隆; 竹中 充 電子情報通信学会総合大会講演論文集 2015 (2) "SS -92"-"SS-93" 2015年02月
• 招待講演 ゲルマニウムソース薄膜ひずみSOIトンネルFETの実現とその電気特性に与えるひずみ、MOS界面、バックバイアスの効果 (シリコン材料・デバイス) -- (先端CMOSデバイス・プロセス技術(IEDM特集))

  金 閔洙; 若林 勇希; 中根 了昌; 横山 正史; 竹中 充; 高木 信一 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 (421) 9 -12 2015年01月
• Ⅲ-Ⅴ-OI基板の耐熱性向上技術および低抵抗横型PIN接合形成技術 (光エレクトロニクス)

  一宮 佑希; 竹中 充; 高木 信一 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 (377) 37 -40 2014年12月
• III-V-OI基板の耐熱性向上技術および低抵抗横型PIN接合形成技術(光パッシブコンポネント(フィルタ,コネクタ,MEMS),半導体レーザ関連技術,シリコンフォトニクス,一般)

  一宮 佑希; 竹中 充; 高木 信一 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス 114 (378) 37 -40 2014年12月
• New materials for post-Si computing: Ge and GeSn devices

  Suyog Gupta; Xiao Gong; Rui Zhang; Yee-Chia Yeo; Shinichi Takagi; Krishna C. Saraswat MRS BULLETIN 39 (8) 678 -686 2014年08月
• Ⅲ-Ⅴ CMOSフォトニクスを用いた小型低クロストーク光スイッチ (レーザ・量子エレクトロニクス)

  一宮 佑希; 横山 正史; 竹中 充; 高木 信一 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 (98) 39 -42 2014年06月
• Ⅲ-Ⅴ CMOSフォトニクスを用いた光電子融合集積回路プラットホーム技術

  竹中 充; 一宮 佑希; 程 勇鵬; 金 相賢; 高木 信一 電子情報通信学会論文誌. C, エレクトロニクス 97 (3) 95 -103 2014年03月
• 招待講演 強い短チャネル効果耐性と闇値変調性を持つ極薄膜InAs-on-Insulator Tri-Gate MOSFET (シリコン材料・デバイス 先端CMOSデバイス・プロセス技術(IEDM特集))

  金 相賢; 横山 正史; 中根 了昌; 市川 摩; 長田 剛規; 秦 雅彦; 竹中 充; 高木 信一 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113 (420) 39 -42 2014年01月
• 招待講演 Ⅲ-Ⅴ/Ge CMOSフォトニクス実現に向けたデバイス技術

  竹中 充; 高木 信一 半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology 77 19 -22 2013年07月
• Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks (シリコン材料・デバイス)

  張 志宇; 横山 正史; 金 相賢; 市川 磨; 長田 剛規; 秦 雅彦; 竹中 充; 高木 信一 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113 (87) 33 -37 2013年06月
• シリコンプラットフォーム上光電子集積回路に向けたIII-V/Geデバイス技術

  竹中 充; 高木 信一 應用物理 82 (4) 309 -312 2013年04月
• C-3-52 III-V CMOSフォトニクスを用いたInGaAsP細線導波路光スイッチ(C-3.光エレクトロニクス)

  一宮 佑希; 横山 正史; 市川 磨; 秦 雅彦; 竹中 充; 高木 信一 電子情報通信学会総合大会講演論文集 2013 (1) 212 -212 2013年03月
• C-3-16 III-V CMOSフォトニクスプラットフォームと光インターコネクションへの展開(C-3.光エレクトロニクス)

  竹中 充; 一宮 佑希; キムサン ヒョン; 横山 正史; 高木 信一 電子情報通信学会総合大会講演論文集 2013 (1) 176 -176 2013年03月
• InGaAs MOSゲートスタック形成と界面特性

  高木 信一; 田岡 紀之; 鈴木 麗菜; 横山 正史; 金 相賢; 竹中 充 表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan 33 (11) 628 -633 2012年11月
• 高移動度チャネルトランジスタ技術の最新動向

  高木 信一; 竹中 充 電子情報通信学会誌 = The journal of the Institute of Electronics, Information and Communication Engineers 95 (11) 969 -973 2012年11月
• C-4-18 高性能光電子集積回路に向けたIII-V CMOSフォトニクスプラットフォーム技術(C-4.レーザ・量子エレクトロニクス,一般セッション)

  竹中 充; 一宮 佑希; キム サンヒョン; 横山 正史; 高木 信一 電子情報通信学会ソサイエティ大会講演論文集 2012 (1) 228 -228 2012年08月
• 招待講演 引張りひずみ及びMOS界面バッファ層によるIn[x]Ga[1-x]As MOSFETの移動度向上とその物理的理解 (シリコン材料・デバイス)

  金 相賢; 横山 正史; 田岡 紀之; 中根 了昌; 安田 哲二; 山田 永; 福原 昇; 秦 雅彦; 竹中 充; 高木 信一 電子情報通信学会技術研究報告 : 信学技報 111 (422) 17 -20 2012年02月
• 大規模集積回路と半導体材料技術の現状と将来

  泰 雅彦; 高木 信一; 竹中 充 住友化学 : 技術誌 2011 (2) 37 -53 2011年11月
• Ni-InGaAs合金を用いた自己整合型メタルソース・ドレインIn_xGa_<1-x>As MOSFETs

  金 相賢; 横山 正史; 田岡 紀之; 飯田 亮; 李 成薫; 中根 了昌; 卜部 友二; 宮田 典幸; 安田 哲二; 山田 永; 福原 昇; 秦 雅彦; 竹中 充; 高木 信一 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 110 (406) 1 -4 2011年01月
• Siプラットホーム上の新材料チャネルCMOS

  高木 信一; 竹中 充 電子情報通信学会誌 = The journal of the Institute of Electronics, Information and Communication Engineers 93 (11) 904 -908 2010年11月
• 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術

  竹中 充; 横山 正史; 杉山 正和; 中野 義昭; 高木 信一 電子情報通信学会技術研究報告. CPM, 電子部品・材料 110 (179) 45 -48 2010年08月
• III-V/Ge CMOS技術とSiプラットフォーム上の異種材料集積

  高木 信一; 竹中 充 電子情報通信学会技術研究報告. ED, 電子デバイス 110 (109) 119 -124 2010年06月
• High-k/III-V 界面の組成・構造とMIS特性との関係

  安田 哲二; 宮田 典幸; 卜部 友二; 石井 裕之; 板谷 太郎; 前田 辰郎; 山田 永; 福原 昇; 秦 雅彦; 大竹 晃浩; 星井 拓也; 横山 正史; 竹中 充; 高木 信一 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 110 (90) 49 -54 2010年06月
• CT-2-2 Si基板上III-V MOSトランジスタ(CT-2.ポストCMOSデバイス技術?-III-V MOS,ナノワイヤデバイス,グラフェンデバイス-,チュートリアルセッション,ソサイエティ企画)

  高木 信一; 杉山 正和; 竹中 充 電子情報通信学会総合大会講演論文集 2010 (2) "SS -41"-"SS-42" 2010年03月
• 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度及びその引張り歪みの影響の定量評価

  趙 毅; 松本 弘昭; 佐藤 岳志; 小山 晋; 竹中 充; 高木 信一 半導体・集積回路技術シンポジウム講演論文集 73 101 -104 2009年07月
• Ge MIS界面欠陥の電気的性質

  田岡 紀之; 水林 亘; 森田 行則; 右田 真司; 太田 裕之; 高木 信一 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 109 (87) 21 -26 2009年06月
• MOVPE装置を用いたAs気相ドーピングによるGe p-n接合の電気特性

  森井清仁; 中根了昌; 杉山正和; 中野義昭; 竹中充; 竹中充; 高木信一 応用物理学関係連合講演会講演予稿集 56th (2) 2009年
• 微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析

  杉山正和; 出浦桃子; 星井拓也; 山本剛久; 幾原雄一; 田尻寛男; 坂田修身; 木村滋; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭 応用物理学関係連合講演会講演予稿集 55th (1) 2008年
• 微小領域選択成長によるSi(111)基板上へのInAsピラーの形成

  星井拓也; 出浦桃子; 杉山正和; 中根了昌; 菅原聡; 竹中充; 中野義昭; 高木信一 応用物理学関係連合講演会講演予稿集 55th (1) 2008年
• 微小領域選択MOVPEにおけるSi上InGaAsの横方向成長に対するGa組成の影響

  出浦桃子; 星井拓也; 杉山正和; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭 応用物理学関係連合講演会講演予稿集 55th (1) 2008年
• Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method

  MATSUBARA Hiroshi; KUMAGAI Hiroshi; SUGAHARA Satoshi; TAKENAKA Mitsuru; TAKAGI Shin-ichi Extended abstracts of the ... Conference on Solid State Devices and Materials 2007 18 -19 2007年09月
• 微小孔を介したSi基板上InGaAs成長におけるモフォロジー向上

  星井拓也; 出浦桃子; 杉山正和; 中根了昌; 菅原聡; 竹中充; 中野義昭; 高木信一; 高木信一 応用物理学会学術講演会講演予稿集 68th (1) 2007年
• Si上III/V族化合物半導体の選択MOVPEにおける初期核発生過程の観察と制御

  出浦桃子; 杉山正和; 星井拓也; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭 応用物理学会学術講演会講演予稿集 68th (1) 2007年
• Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge

  KUMAGAI Hiroshi; SHICHIJO Masato; ISHIKAWA Hiroto; HOSHII Takuya; SUGAHARA Satoshi; UCHIDA Yasutaka; TAKAGI Shinichi Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 398 -399 2006年09月
• Fully-Depleted SOI CMOS circuits and technology: For ultralow-power applications

  Takayasu Sakurai; Akira Matsuzawa; Takakuni Douseki; Hideaki Matsuhashi; Toshiaki Tsuchiya; Yasuhisa Omura; Hiroshi Shimomura; Masashi Yonemaru; Koji Fujii; Atsushi Kameyama; Hiroshi Kawaguchi; Tsuneo Tsukahara; Minoru Kozaki; Masayoshi Kinoshita; Akihiro Sawada; Yasuyuki Matsuya; Jun Terada; Yoshitsugu Inagaki; Tsuneaki Fuse; Yusuke Ohtomo; Hiroshi Koizumi; Shunsuke Baba; Kazuyoshi Nishimura; Yoshifumi Yoshida; Norio Hama; Tohru Mogami; Toshiro Hiramoto; Ken Uchida; Shin-Ichi Takagi; Toshinori Numata Fully-Depleted SOI CMOS Circuits and Technology: For Ultralow-Power Applications 1 -411 2006年
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs

  ISHIHARA Takamitsu; UCHIDA Ken; KOGA Junji; TAKAGI Shin-ichi Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 42 -43 2005年09月
• 高性能・微細ひずみSOI-MOSFET

  沼田 敏典; 入沢 寿史; 手塚 勉; 古賀 淳二; 平下 紀夫; 臼田 宏治; 豊田 英二; 宮村 佳児; 田邊 顕人; 杉山 直治; 高木 信一 電気学会研究会資料. EDD, 電子デバイス研究会 2005 (37) 29 -33 2005年03月
• 高性能・部分空乏型および完全空乏型ひずみSOI-MOSFET

  沼田 敏典; 入沢 寿史; 手塚 勉; 古賀 淳二; 平下 紀夫; 臼田 宏治; 豊田 英二; 宮村 佳児; 田邊 顕人; 杉山 直治; 高木 信一 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 104 (577) 5 -8 2005年01月
• Strained SOI technology for high-performance, low-power CMOS applications

  Takagi, S.; Mizuno, T.; Tezuka, T.; Sugiyama, N.; Numata, T.; Usuda, K.; Moriyama, Y.; Nakaharai, S.; Koga, J.; Tanabe, A.; Maeda, T.; Ieee, Ieee 2003 Ieee International Solid-State Circuits Conference: Digest of Technical Papers 46 376 -+ 2003年 [査読有り]
  
• Si/SiGeヘテロ構造を用いたMOSデバイス技術

  高木信一 2003応用物理学会誌 72 (3) 284 -290 2003年
• 量子閉じ込め効果が薄膜SOI MOSFETの電気特性に与える影響について

  内田 建; 古賀 淳二; 大場 竜二; 沼田 敏典; 高木 信一 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 101 (573) 89 -94 2002年01月
• Design for scaled thin film strained-SOI CMOS devices with higher carrier mobility

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Numata, T.; Maeda, T.; Takagi, S.; Electronic Devices Society Of Ieee; Electronic Devices Society Of, Ieee INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST 31-34 31 -34 2002年 [査読有り]
  
• シリコン表面のセルフ・アンジュレーションを利用したサブミクロン単一電子素子

  内田 建; 古賀 淳二; 大場 竜二; 高木 信一; 鳥海 明 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 99 (617) 35 -39 2000年02月
• サブバンド構造変調を利用した高性能超薄膜SOI-MOSFET (特集:ナノ領域の先端研究--21世紀のキー技術を求めて)

  高木 信一; 古賀 淳二; 鳥海 明 東芝レビュー 54 (2) 25 -28 1999年02月

受賞

• 2019年03月 応用物理学会 2018年度APEX/JJAP編集貢献賞
  
• 2017年04月 内閣府 紫綬褒章
   キャリア輸送特性の明確化・モデル化による高性能MOSトランジスタの開発
• 2015年04月 文部科学省 平成27年度科学技術分野の文部科学大臣表彰 研究部門
   CMOS中のキャリア輸送特性の理解と高性能化に関する研究
• 2013年12月 IEEE IEEE Andrew S. Grove Award
   For contributions to the understanding of transport properties in inversion layers of high-performance MOSFETs
• 2013年04月 応用物理学会 2012年度APEX/JJAP編集貢献賞
  
• 2012年09月 第12回（平成24年度）山崎貞一賞 半導体及び半導体装置分野
   Si MOSFETのチャネル内キャリア輸送特性の解明と高移動度化への先駆的貢献
• 2008年09月 応用物理学会 応用物理学会フェロー表彰
   MOSトランジスターの輸送現象の解明と高移動度化の研究
• 2007年09月 応用物理学会 第29回応用物理学会論文賞 解説論文賞
   Si系高移動度MOSトランジスタ技術
• 2004年11月 日本IBM 第18回日本 IBM科学賞エレクトロニクス部門
   Si MOS電界効果トランジスタにおけるキャリア輸送と新素子構造に関する研究
• 2004年02月 International Solid State Circuits Conference 2004 International Solid State Circuits Conference (ISSCC) Takuo Sugano Outstanding Paper Award
   Strained Si-On-Insulator (Strained SOI) Technology for High Performance/Low Power CMOS Application

共同研究・競争的資金等の研究課題

• 極薄膜半導体チャネルCMOSのキャリア輸送特性の解明と高移動度化手法の確立

  日本学術振興会：科学研究費助成事業

  研究期間 : 2022年04月 -2025年03月 

  代表者 : 高木 信一
• layer transferによる高移動度材料3次元集積CMOSの精密構造制御

  日本学術振興会：科学研究費助成事業

  研究期間 : 2017年05月 -2022年03月 

  代表者 : 高木 信一; 前田 辰郎; 入沢 寿史
• スティープスロープＭＯＳトランジスタに最適なＭＯＳゲートスタック構造に関する研究

  日本学術振興会：科学研究費助成事業

  研究期間 : 2016年10月 -2019年03月 

  代表者 : 高木 信一; HUANG PO-CHIN
• 3次元集積Ge/III-V CMOSに向けた素子技術基盤の構築

  日本学術振興会：科学研究費助成事業

  研究期間 : 2017年04月 -2018年03月 

  代表者 : 高木 信一
• Ge-On-Insulator CMOSのキャリア輸送特性解明と性能向上手法確立

  日本学術振興会：科学研究費助成事業

  研究期間 : 2014年04月 -2017年03月 

  代表者 : 高木 信一; 竹中 充
• 高移動度チャネルＭＯＳＦＥＴのキャリア輸送と素子構造に関する理論的研究

  日本学術振興会：科学研究費助成事業

  研究期間 : 2012年04月 -2015年03月 

  代表者 : 高木 信一; ALAM Khairul; KHAIRUL Alam
• ゲルマニウムＭＯＳ界面電気伝導機構の解明と高移動度化手法の確立

  日本学術振興会：科学研究費助成事業

  研究期間 : 2011年04月 -2014年03月 

  代表者 : 高木 信一; 竹中 充
• 省電力／超高速ナノＣＭＯＳのための電子物性設計と高移動度チャネル技術の創生

  日本学術振興会：科学研究費助成事業

  研究期間 : 2010年 -2013年 

  代表者 : 財満 鎭明; 竹中 充; 坂下 満男; 田中 信夫; 竹内 和歌奈; 中塚 理; 高木 信一
• 結晶ひずみを利用したSiMOS反転層移動度決定機構の解明と高移動度化指針の確立

  日本学術振興会：科学研究費助成事業

  研究期間 : 2008年 -2010年 

  代表者 : 高木 信一; 竹中 充
• シリコンナノエレクトロニクスの新展開に関する総括的研究

  日本学術振興会：科学研究費助成事業

  研究期間 : 2006年 -2010年 

  代表者 : 財満 鎭明; 堀 勝; 高木 信一; 益 一哉; 宮崎 誠一; 平本 俊郎; 田畑 仁; 高木 信一; 益 一哉; 宮崎 誠一; 平本 俊郎
• 高移動度チャネル材料MOSFETのMOS界面とキャリア輸送特性に関する研究

  日本学術振興会：科学研究費助成事業

  研究期間 : 2008年 -2009年 

  代表者 : 高木 信一; ZHAO Yi
• ナノ機能化ゲルマニウム系チャネル

  日本学術振興会：科学研究費助成事業

  研究期間 : 2006年 -2009年 

  代表者 : 高木 信一; 菅原 聡; 竹中 充; 竹中 充
• Si系新チャネル材料MOSトランジスタにおけるキャリア輸送特性の研究

  日本学術振興会：科学研究費助成事業

  研究期間 : 2006年 -2007年 

  代表者 : 高木 信一; OLIVIER Weber
• ひずみSiMOSトランジスタの物理モデル構築の研究

  日本学術振興会：科学研究費助成事業

  研究期間 : 2004年 -2006年 

  代表者 : 高木 信一
• シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー

  日本学術振興会：科学研究費助成事業

  研究期間 : 2005年 -2005年 

  代表者 : 財満 鎭明; 高木 信一; 宮崎 誠一; 堀 勝; 益 一哉; 田畑 仁