Takagi Shinichi

Researcher Information

Affiliation

Advanced Comprehensive Research Organization (ACRO) Specially Appointed Professor

URL

https://jglobal.jst.go.jp/detail?JGLOBAL_ID=202001014641086727

Research funding number

• 30372402

ORCID ID

•  https://orcid.org/0000-0002-5601-2604

J-Global ID

• 202001014641086727

Research Interests

• semiconductor devices   

Research Areas

• Nanotechnology/Materials / Nanostructure physics / semiconductor device physics
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / semiconductor materials
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / semiconductor devices

Academic & Professional Experience

• 2025/06 - Today  The University of TokyoProfessor Emeritus
• 2025/04 - Today  Teikyo UniversityAdvanced Comprehensive Research OrganizationSpecially Appointed Professor
• 2007/04 - 2025/03  The University of TokyoThe Graduate School of Engineering Department of Electrical Engineering and Information Systems
• 2004/04 - 2007/03  The University of TokyoProfessor
• 2003/10 - 2004/03  The University of TokyoProfessor
• 2003/04 - 2003/09  Toshiba Corporation
• 1998/07 - 2003/03  Toshiba Corporation
• 1991/07 - 1998/06  Toshiba Corporation
• 1993/08 - 1995/03  Stanford UniversitySolid State Electronics LaboratoryVisiting Scholar
• 1987/04 - 1991/06  Toshiba Corporation

Education

• 1984/04 - 1987/03  The University of Tokyo  The Graduate School of Engineering
• 1982/04 - 1984/03  The University of Tokyo  The Graduate School of Engineering
• 1978/04 - 1982/03  The University of Tokyo  The Faculty of Engineering  Department of Electronic Engineering

Association Memberships

• 電子情報通信学会   IEEE   応用物理学会   

Research Activity Information

Published Papers

• Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing

  Yu Ukezeki; Sota Inoue; Norifumi Fujimura; Tokuji Yokomatsu; Kensuke Kanda; Kazusuke Maenaka; Kasidit Toprasertpong; Shinichi Takagi; Takeshi Yoshimura

  Applied Physics Express IOP Publishing 18 (8) 081001 - 081001 1882-0778 2025/08 [Refereed]
  
• Low-loss Sb2S3 optical phase shifter enabled by optimizing sputtering conditions

  Yuto Miyatake; Tomohiro Anda; Yosuke Wakita; Kotaro Makino; Shogo Hatayama; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express Optica Publishing Group 15 (8) 1972 - 1986 2025/07 [Refereed]
  
• Waveguide-multiplexed photonic matrix–vector multiplication processor using multiport photodetectors

  Rui Tang; Makoto Okano; Chao Zhang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optica Optica Publishing Group 12 (6) 812 - 820 2025/06 [Refereed]
  
• Voltage-mode reservoir computing with ferroelectric CMOS inverters

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Express IOP Publishing 18 (6) 061002 - 061002 1882-0778 2025/06 [Refereed]
  
• Scalable intensity-based photonic matrix-vector multiplication processor using single-wavelength time-division-multiplexed signals

  Chengli Chai; Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Letters Optica Publishing Group 50 (11) 3656 - 3656 0146-9592 2025/05 [Refereed]
  
• Prospects and challenges of HfO2-based ferroelectric devices

  Shinichi Takagi; Mitsuru Takenaka; Kasidit Toprasertpong

  Science China Information Sciences Springer Science and Business Media LLC 68 (6) 160407 - 160407 1674-733X 2025/05 [Refereed][Invited]
  
• Ultra-low-power cryogenic complementary metal oxide semiconductor technology

  Qing-Tai Zhao; Yi Han; Hung-Chi Han; Lars R. Schreiber; Tsung-En Lee; Hung-Li Chiang; Iuliana Radu; Christian Enz; Detlev Grützmacher; Christoph Stampfer; Shinichi Takagi; Joachim Knoch

  Nature Reviews Electrical Engineering Springer Science and Business Media LLC 2 (4) 277 - 290 2025/04 [Refereed]
  
• Polarization current-based reservoir computing utilizing an anti-ferroelectric-like HfZrO2 capacitor

  Shin-Yi Min; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  APL Machine Learning AIP Publishing 3 (1) 2025/03 [Refereed]
  
• Accurate evaluation of effective mobility in Si MOSFETs at cryogenic temperatures using the quasi-static C–V method

  Yutong Chen; Zhao Jin; Xueyang Han; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 64 (3) 03SP29 - 03SP29 0021-4922 2025/03 [Refereed]
  
• Voltage-operating reservoir computing utilizing ferroelectric-FET source follower configurations

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 64 (2) 02SP40 - 02SP40 0021-4922 2025/02 [Refereed]
  
• Unipolar polarization switching and high-endurance memory operation of HZO/Si anti-ferroelectric FETs

  Shin-Yi Min; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 64 (2) 02SP36 - 02SP36 0021-4922 2025/02 [Refereed]
  
• A novel measurement method to evaluate relationship between threshold voltage and polarization for understanding memory operation of ferroelectric field-effect transistors

  Seong-Kun Cho; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 64 (2) 02SP12 - 02SP12 0021-4922 2025/02 [Refereed]
  
• A correction method of split C–V characteristics based on transmission line model for accurate evaluation of surface carrier concentration and effective mobility in MOSFETs

  Zhao Jin; Yutong Chen; Xueyang Han; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 64 (1) 01SP16 - 01SP16 0021-4922 2025/01 [Refereed]
  
• Recovery Strategy of Fatigue-Limited Endurance in Si FeFETs With Thin HfZrO₂ Films

  Zuocheng Cai; Zhenhong Liu; Yan-Kui Liang; Xueyang Han; Shin-Yi Min; Eishin Nako; Seong-Kun Cho; Chia-Tsong Chen; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 72 (1) 467 - 473 0018-9383 2025/01 [Refereed]
  
• Compact, low-loss, and broadband 2 × 2 Si optical coupler designed by covariance matrix adaptation evolution strategy

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics IOP Publishing 63 (12) 12SP16 - 12SP16 0021-4922 2024/12 [Refereed]
  
• Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures

  Min-Soo Kang; Kasidit Toprasertpong; Hiroshi Oka; Takahiro Mori; Mitsuru Takenaka; Shinichi Takagi

  Journal of Applied Physics AIP Publishing 136 (19) 195702 - 195702 0021-8979 2024/11 [Refereed]
  
• Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

  Tomohiro Akazawa; Stéphane Monfray; Frédéric Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics letters 49 (20) 5882 - 5885 2024/10 [Refereed]
  
• (Invited) Mobility Enhancement Technology of Extremely-Thin Body Ge-on-Insulator Channel Mosfets

  Shinichi Takagi; Xueyang Han; Chia-Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 114 (2) 3 - 14 1938-5862 2024/09 [Refereed][Invited]
  
• Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer

  Yan-Kui Liang; Wei-Li Li; Yu-Lon Lin; Dong-Ru Hsieh; Tsung-Ying Yang; Tsung-Te Chou; Chi-Chung Kei; Huai-Ying Huang; Yu-Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun-Hsiung Lin

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 71 (9) 5788 - 5791 0018-9383 2024/09 [Refereed]
  
• Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film

  Zhenhong Liu; Kasidit Toprasertpong; Zuocheng Cai; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Letters 125 (7) 072904(1) - 072904(6) 0003-6951 2024/08 [Refereed]
  
• Symmetric silicon microring resonator optical crossbar array for accelerated inference and training in deep learning

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Photonics Research 12 (8) 1681 - 1688 2327-9125 2024/08 [Refereed]
  
• Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel

  Yan-Kui Liang; Jun-Yang Zheng; Yu-Lon Lin; Yu-Cheng Lu; Dong-Ru Hsieh; Tsung-Te Chou; Chi-Chung Kei; Huai-Ying Huang; Yu-Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun-Hsiung Lin

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 71 (6) 3671 - 3677 0018-9383 2024/06 [Refereed]
  
• Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping

  Zuocheng Cai; Kasidit Toprasertpong; Zhenhong Liu; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 71 (6) 3633 - 3639 0018-9383 2024/06 [Refereed]
  
• Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide.

  Kazuma Taki; Naoki Sekine; Kouhei Watanabe; Yuto Miyatake; Tomohiro Akazawa; Hiroya Sakumoto; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Nature communications 15 (1) 3549 - 3549 2024/05 [Refereed]
  
• Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

  Hiromi Sawai; Motomu Kurata; Tsutomu Murakawa; Yoshinori Ando; Kunihiro Fukushima; Ryota Eto; Shinya Sasagawa; Kentaro Sugaya; Ryota Hodo; Toshiki Mizuguchi; Yusuke Komura; Hitoshi Kunitake; Shinichi Takagi; Shunpei Yamazaki

  Japanese Journal of Applied Physics IOP Publishing 63 (5) 051003 - 051003 0021-4922 2024/05 [Refereed]
  
• Co-design of SLC/MLC FeFET-based highly error-tolerant low-power CiM and strong lottery ticket hypothesis-based algorithm

  Kenshin Yamauchi; Ayumu Yamada; Naoko Misawa; Seong-Kun Cho; Kasidit Toprasertpong; Shinichi Takagi; Chihiro Matsui; Ken Takeuchi

  Japanese Journal of Applied Physics IOP Publishing 63 (4) 04SP06 - 04SP06 0021-4922 2024/03 [Refereed]
  
• Performance improvement in reservoir computing by using HfZrO2 FeFETs through operating voltage optimization

  Shin Yi Min; Kasidit Toprasertpong; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 63 (3) 03SP19 - 03SP19 0021-4922 2024/03 [Refereed]
  
• FeFET Local Multiply and Global Accumulate Voltage-Sensing Computation-In-Memory Circuit Design for Neuromorphic Computing

  Chihiro Matsui; Kasidit Toprasertpong; Shinichi Takagi; Ken Takeuchi

  IEEE Transactions on Very Large Scale Integration (VLSI) Systems Institute of Electrical and Electronics Engineers (IEEE) 32 (3) 468 - 479 1063-8210 2024/03 [Refereed]
  
• Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 63 (2) 02SP47 - 02SP47 0021-4922 2024/02 [Refereed]
  
• Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

  Hiroya Sakumoto; Taketoshi Nakayama; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics 63 (2) 02SP52 - 02SP52 0021-4922 2024/02 [Refereed]
  
• Add-Drop Microring Resonator Switch with Positive/Negative Phase Tuning Using InGaAsP/Si Hybrid MOS Phase Shifter

  Yosuke Wakita; Rui Tang; Hanzhi Tang; Shuhei Ohno; Tomohiro Akazawa; Yuto Miyatake; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 (12) 4289 - 4295 0733-8724 2024 [Refereed]
  
• Transparent In-Line Optical Power Monitoring Using InP/Si Hybrid Waveguide Phototransistor

  Tomohiro Akazawa; Kei Sumita; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 (12) 4281 - 4288 0733-8724 2024 [Refereed]
  
• Demonstration of Wake-Up Free 6 nm Ultrathin ZrO-HfO Superlattice Ferroelectric Capacitors with High Endurance Against Fatigue

  Yan Kui Liang; Zhenhong Liu; Zuocheng Cai; Xueyang Han; Huai Ying Huang; Yu Ming Lin; Edward Yi Chang; Chun Hsiung Lin; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  IEEE Electron Device Letters 45 (8) 1468 - 1471 0741-3106 2024 [Refereed]
  
• Photonic Matrix-Vector Multiplication with Low-Insertion-Loss and Non-Volatile Ge2Sb2Te3S2 Intensity Modulators

  Yuto Miyatake; Rui Tang; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 (12) 4347 - 4354 0733-8724 2024 [Refereed]
  
• Reservoir Computing Utilizing a Complementary Combination of n- and p-Channel FeFETs

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  IEEE Electron Device Letters 45 (10) 1768 - 1771 0741-3106 2024 [Refereed]
  
• Electron Mobility Enhancement of (111)-Oriented Extremely Thin Body Ge-on-Insulator nMOSFETs by Flipped Smart-Cut Substrates

  Xueyang Han; Chia Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 71 (9) 5198 - 5204 0018-9383 2024 [Refereed]
  
• Design of compact and low-loss S-bends by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 31 (26) 43850 - 43863 2023/12 [Refereed]
  
• Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode

  Tipat Piyapatarakul; Hanzhi Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics {IOP} Publishing 62 (SC) sc1008 - sc1008 0021-4922 2023/12 [Refereed]
  
• Reservoir Computing System With HZO/Si FeFETs in Parallel Configuration: Experimental Demonstration of Speech Classification

  Eishin Nako; Kasidit Toprasertpong; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 70 (11) 5657 - 5664 0018-9383 2023/11 [Refereed]
  
• Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

  Rui Tang; Kouhei Watanabe; Masahiro Fujita; Hanzhi Tang; Tomohiro Akazawa; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Laser & Photonics Reviews Wiley 17 (11) 2300279(1) - 2300279(9) 1863-8880 2023/10 [Refereed]
  
• (Invited) Physical Understanding of HfZrO2/Si FeFET Memory and Its AI Applications

  Shinichi Takagi; Kasidit Toprasertpong; Zuocheng Cai; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 112 (1) 65 - 74 1938-5862 2023/09 [Refereed][Invited]
  
• Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon-Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy

  Yuiha Maeda; Ryo Yokogawa; Sho Sugawa; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi; Atsushi Ogura

  ECS Transactions The Electrochemical Society 112 (1) 37 - 43 1938-5862 2023/09 [Refereed]
  
• Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory

  Kasidit Toprasertpong; Chihiro Matsui; Mitsuru Takenaka; Ken Takeuchi; Shinichi Takagi

  Journal of Physics D: Applied Physics IOP Publishing 56 (46) 465103 - 465103 0022-3727 2023/08 [Refereed]
  
• The future transistors

  Wei Cao; Huiming Bu; Maud Vinet; Min Cao; Shinichi Takagi; Sungwoo Hwang; Tahir Ghani; Kaustav Banerjee

  Nature Springer Science and Business Media LLC 620 (7974) 501 - 515 0028-0836 2023/08 [Refereed]
  
• Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on- Insulator (SGOI) pMOSFETs

  Chia Tsong Chen; Xueyang Han; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 70 (7) 3963 - 3969 0018-9383 2023/07 [Refereed]
  
• Write Variation & Reliability Error Compensation by Layer-wise Tunable Retraining of Edge FeFET LM-GA CiM

  Shinsei Yoshikiyo; Naoko Misawa; Kasidit Toprasertpong; Shinichi Takagi; Chihiro Matsui; Ken Takeuchi

  IEICE Transactions on Electronics Institute of Electronics, Information and Communications Engineers (IEICE) 106-c (7) 352 - 364 0916-8524 2023/07 [Refereed]
  
• Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM

  Kei Sumita; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  AIP Advances {AIP} Publishing 13 (5) 055310(1) - 055310(6) 2158-3226 2023/05 [Refereed]
  
• Interpretation of mobility universality against effective electric field of Si nMOSFETs based on nonlinear model of surface roughness scattering

  Kei Sumita; Kasidit Toprasertpong; Mitsuru TAKENAKA; Shinichi TAKAGI

  Applied Physics Express {IOP} Publishing 16 (6) 064001 - 064001 1882-0778 2023/05 [Refereed]
  
• Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge₂Sb₂Te₃S₂

  Yuto Miyatake; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 70 (4) 2106 - 2112 0018-9383 2023/04 [Refereed]
  
• Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al₂O₃/plasma oxidation GeO _x /(111) and (100) n-Ge MOS structures

  Xueyang Han; Chia-Tsong Chen; Mengnan Ke; Ziqiang Zhao; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) sc1089 - sc1089 0021-4922 2023/03 [Refereed]
  
• Effect of Hf _x Zr_1−x O₂/Ge metal–ferroelectrics–insulator–semiconductor interfaces on polarization reversal behavior

  Koichiro Iwashige; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) sc1093 - sc1093 0021-4922 2023/03 [Refereed]
  
• Influence of substrate impurity concentration on sub-threshold swing of Si n-channel MOSFETs at cryogenic temperatures down to 4 K

  Min-Soo Kang; Kei Sumita; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) sc1062 - sc1062 0021-4922 2023/02 [Refereed]
  
• Accurate evaluation of interface trap density at InAs MOS interfaces by using C-V curves at low temperatures

  Ryohei Yoshizu; Kei Sumita; Kasidit Toprasertpong; Mitsuru TAKENAKA; Shinichi TAKAGI

  Japanese Journal of Applied Physics {IOP} Publishing 62 (sc) sc1055 - sc1055 0021-4922 2023/01 [Refereed]
  
• Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs

  Kei Sumita; Min-Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Journal of the Electron Devices Society Institute of Electrical and Electronics Engineers ({IEEE}) 11 216 - 229 2168-6734 2023 [Refereed]
  
• Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths.

  Takaya Ochiai; Tomohiro Akazawa; Yuto Miyatake; Kei Sumita; Shuhei Ohno; Stéphane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Nature communications 13 (1) 7443(1) - 7443(8) 2022/12 [Refereed]
  
• Low-Capacitance Ultrathin InGaAs Membrane Photodetector on Si Slot Waveguide Toward Receiverless System

  Tomohiro Akazawa; Dongrui Wu; Kei Sumita; Naoki Sekine; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 69 (12) 7184 - 7189 0018-9383 2022/12 [Refereed]
  
• Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 69 (12) 7113 - 7119 0018-9383 2022/12 [Refereed]
  
• Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Frontiers in Electronics Frontiers Media {SA} 3 1 - 11 2673-5857 2022/12 [Refereed]
  
• Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

  Kasidit Toprasertpong; Kento Tahara; Yukinobu Hikosaka; Ko Nakamura; Hitoshi Saito; Mitsuru Takenaka; Shinichi Takagi

  ACS Applied Materials & Interfaces American Chemical Society ({ACS}) 14 (45) 51137 - 51148 1944-8244 2022/11 [Refereed]
  
• Non-volatile compact optical phase shifter based on Ge₂Sb₂Te₅ operating at 2.3 µm

  Yuto Miyatake; Chong Pei Ho; Prakash Pitchappa; Ranjan Singh; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express Optica Publishing Group 12 (12) 4582 - 4593 2159-3930 2022/11 [Refereed]
  
• On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics A Springer Science and Business Media {LLC} 128 (12) 1114 - 1114 0947-8396 2022/11 [Refereed][Invited]
  
• (Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era

  Shinichi Takagi; Chia-Tsong Chen; Xueyang Han; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 109 (4) 59 - 71 1938-5862 2022/09 [Refereed][Invited]
  
• Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits

  Mitsuru Takenaka; Ziqiang Zhao; Chong Pei Ho; Takumi Fujigaki; Tipat Piyapatarakul; Yuto Miyatake; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  ECS Transactions The Electrochemical Society 109 (4) 47 - 58 1938-5862 2022/09 [Refereed][Invited]
  
• Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy

  Ryo Yokogawa; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi; Atsushi Ogura

  ECS Transactions The Electrochemical Society 109 (4) 351 - 357 1938-5862 2022/09 [Refereed]
  
• Two-layer integrated photonic architectures with multiport photodetectors for high-fidelity and energy-efficient matrix multiplications

  Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Dirk Englund; Mitsuru Takenaka

  Optics Express Optica Publishing Group 30 (19) 33940 - 33954 1094-4087 2022/09 [Refereed]
  
• Reservoir computing on a silicon platform with a ferroelectric field-effect transistor

  Kasidit Toprasertpong; Eishin Nako; Zeyu Wang; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  Communications Engineering Springer Science and Business Media {LLC} 1 (1) 21 - 21 2731-3395 2022/08 [Refereed]
  
• Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

  Shuhei Ohno; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  ACS Photonics American Chemical Society ({ACS}) 9 (8) 2614 - 2622 2330-4022 2022/07 [Refereed]
  
• Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance

  Hanzhi Tang; Qiang Li; Chong Pei Ho; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 30 (13) 22848 - 22859 2022/06 [Refereed]
  
• Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

  Naoki Sekine; Kei Sumita; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express Optica Publishing Group 30 (13) 23318 - 23329 1094-4087 2022/06 [Refereed]
  
• Characterization of interface properties of Al₂O₃/n-GaSb and Al₂O₃/InAs/n-GaSb metal-oxide-semiconductor structures

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 61 (6) 061010(1) - 061010(12) 0021-4922 2022/05 [Refereed]
  
• Numerical analysis of optical phase modulator operating at 2 μm wavelength using graphene/III–V hybrid metal-oxide-semiconductor capacitor

  Tipat Piyapatarakul; Hanzhi Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics {IOP} Publishing 61 (SC) sc1031 - sc1031 0021-4922 2022/05 [Refereed]
  
• Introduction of high tensile strain into Ge-on-Insulator structures by oxidation and annealing at high temperature

  Xueyang Han; Chia-Tsong Chen; Cheol-Min Lim; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 61 (SC) sc1027 - sc1027 0021-4922 2022/05 [Refereed]
  
• Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4–300 K

  Min-Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Hiroshi Oka; Takahiro Mori; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 61 (SC) sc1032 - sc1032 0021-4922 2022/05 [Refereed]
  
• Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness Scattering

  Kei Sumita; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 69 (4) 2115 - 2121 0018-9383 2022/04 [Refereed]
  
• Effective Mobility Enhancement Through Asymmetric Strain Channels on Extremely Thin Body (100) GOI pMOSFETs

  Chia-Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 69 (1) 25 - 30 0018-9383 2022/01
• A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

  Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

  Nanoscale Royal Society of Chemistry (RSC) 14 (5) 2013 - 2022 2040-3364 2022
• Low-loss Ge waveguide at the 2-µm band on an n-type Ge-on-insulator wafer

  Ziqiang Zhao; Cheol-Min Lim; Chongpei Ho; Kei Sumita; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express Optica Publishing Group 11 (12) 4097 - 4097 2159-3930 2021/11
• (Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

  Shinichi Takagi; Kasidit Toprasertpong; Kent Tahara; Eishin Nako; Ryosho Nakane; Zeyu Wang; Xuan Luo; Tsung-En Lee; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 104 (4) 17 - 26 1938-5862 2021/10
• Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

  K. Sumita; K. Toprasertpong; M. Takenaka; S. Takagi

  Applied Physics Letters {AIP} Publishing 119 (10) 103501 - 103501 0003-6951 2021/09
• Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces

  Tsung-En Lee; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  AIP Advances {AIP} Publishing 11 (8) 085021 - 085021 2158-3226 2021/08
• Antiferroelectric properties of ZrO₂ ultra-thin films prepared by atomic layer deposition

  Xuan Luo; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Letters {AIP} Publishing 118 (23) 232904 - 232904 0003-6951 2021/06
• Si Microring Resonator Optical Switch based on Optical Phase Shifter with Ultrathin-InP/Si Hybrid Metal-Oxide-Semiconductor Capacitor

  Shuhei Ohno; Qiang Li; Naoki Sekine; Hanzhi Tang; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express The Optical Society 1094-4087 2021/05
• Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates

  M. Mitsuhara; T. Gotow; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  Journal of Crystal Growth Elsevier BV 555 125970 - 125970 0022-0248 2021/02
• Mobility enhancement techniques for Ge and GeSn MOSFETs

  Ran Cheng; Zhuo Chen; Sicong Yuan; Mitsuru Takenaka; Shinichi Takagi; Genquan Han; Rui Zhang

  Journal of Semiconductors IOP Publishing Ltd 42 (2) 1674-4926 2021/02 [Refereed]
  
• Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Journal of the Electron Devices Society Institute of Electrical and Electronics Engineers ({IEEE}) 9 612 - 617 2168-6734 2021
• Impacts of Equivalent Oxide Thickness Scaling of TiN/Y2O3 Gate Stacks with Trimethylaluminum Treatment on SiGe MOS Interface Properties

  Tsung-En Lee; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Electron Device Letters Institute of Electrical and Electronics Engineers ({IEEE}) 1 - 1 0741-3106 2021
• Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction

  Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 1 - 7 0018-9383 2021
• High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

  Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

  Communications Materials Springer Science and Business Media LLC 1 (1) 2020/12
• Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 28 (24) 35663 - 35673 1094-4087 2020/11
• Reduction of MOS Interface Defects in TiN/Y2O3/Si0.78Ge0.22 Structures by Trimethylaluminum Treatment

  Tsung-En Lee; Mengnan Ke; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (10) 4067 - 4072 0018-9383 2020/10
• Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

  Kasidit Toprasertpong; Kento Tahara; Taichiro Fukui; Zaoyang Lin; Kouhei Watanabe; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 (10) 1588 - 1591 0741-3106 2020/10
• Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

  Kimihiko Kato; Tetsufumi Tanamoto; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (9) 3876 - 3882 0018-9383 2020/09
• Numerical analyses of optical loss and modulation bandwidth of an InP organic hybrid optical modulator

  Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 28 (20) 29730 - 29739 1094-4087 2020/09
• Efficient Mid-Infrared Germanium Variable Optical Attenuator Fabricated by Spin-on-Glass Doping

  Ziqiang Zhao; Chong Pei Ho; Qiang Li; Zaoyang Lin; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JOURNAL OF LIGHTWAVE TECHNOLOGY 38 (17) 4808 - 4816 0733-8724 2020/09
• Operation of (111) Ge-on-Insulator n-channel MOSFET Fabricated by Smart-Cut Technology (vol 41, pg 985, 2020)

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 (8) 1266 - 1266 0741-3106 2020/08
• Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films

  K. Sumita; J. Takeyasu; K. Toprasertpong; M. Takenaka; S. Takagi

  Journal of Applied Physics {AIP} Publishing 128 (1) 015705 - 015705 0021-8979 2020/07
• Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration

  Kimihiko Kato; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 13 (7) 1882-0778 2020/07
• Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 (7) 985 - 988 0741-3106 2020/07
• Diffusion properties of n-type dopants diffused from spin on glass into Ge

  Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 128 (1) 0021-8979 2020/07
• Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

  Kasidit Toprasertpong; Kento Tahara; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 116 (24) 0003-6951 2020/06
• Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

  Masafumi Yokoyama; Taketsugu Yamamoto; Dae-Hwan Ahn; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 127 (22) 0021-8979 2020/06
• Metal-oxide-semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

  Tsung-En Lee; Mengnan Ke; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 127 (18) 0021-8979 2020/05
• Tunable Germanium-on-Insulator Band-Stop Optical Filter Using Thermo-Optic Effect

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS JOURNAL 12 (2) 1943-0655 2020/04
• p-Channel TFET Operation of Bilayer Structures With Type-II Heterotunneling Junction of Oxide- and Group-IV Semiconductors

  Kimihiko Kato; Kwang-Won Jo; Hiroaki Matsui; Hitoshi Tabata; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (4) 1880 - 1886 0018-9383 2020/04
• Computational design of efficient grating couplers using artificial intelligence

  Yuto Miyatake; Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 0021-4922 2020/04
• Si microring resonator crossbar arrays for deep learning accelerator

  Shuhei Ohno; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 0021-4922 2020/04
• Accurate evaluation of specific contact resistivity between InAs/Ni-InAs alloy using a multi-sidewall transmission line method

  Kei Sumita; Kimihiko Kato; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 0021-4922 2020/04
• Optical Phase Modulators Based on Reverse-Biased III-V/Si Hybrid Metal-Oxide-Semiconductor Capacitors

  Qiang Li; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS TECHNOLOGY LETTERS 32 (6) 345 - 348 1041-1135 2020/03
• Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

  Lim, C.-M.; Zhao, Z.; Sumita, K.; Toprasertpong, K.; Takenaka, M.; Takagi, S.

  AIP Advances 10 (1) 2020 [Refereed]
  
• Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al2O3 Gate Stack

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 8 (1) 341 - 345 2168-6734 2020
• III-V/Si hybrid optical modulators based on MOS capacitor

  Mitsuru Takenaka; Qiang Li; Shuhei Ohno; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi

  INTEGRATED PHOTONICS PLATFORMS: FUNDAMENTAL RESEARCH, MANUFACTURING AND APPLICATIONS 11364 0277-786X 2020
• SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET

  Tetsufumi Tanamoto; Chika Tanaka; Shinichi Takagi

  IEICE ELECTRONICS EXPRESS 17 (6) 1349-2543 2020
• Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 126 (21) 0021-8979 2019/12
• Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (12) 5060 - 5064 0018-9383 2019/12
• Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

  S.-H. Yoon; K. Kato; C. Yokoyama; D.-H. Ahn; M. Takenaka; S. Takagi

  Journal of Applied Physics AIP Publishing 126 (18) 184501 - 184501 0021-8979 2019/11
• Group IV Based Bi-Layer Tunneling Field Effect Transistor

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 93 (1) 23 - 27 1938-6737 2019/10
• (Invited) Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits

  Shinichi Takagi; Kimihiko Kato; Dae-Hwan Ahn; Takahiro Gotow; Ryotaro Takaguchi; Tae-Eon Bae; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 92 (4) 59 - 69 1938-6737 2019/07
• Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks

  T.-E. Lee; K. Kato; M. Ke; K. Toprasertpong; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier BV 214 87 - 92 0167-9317 2019/06
• Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 (21) 0021-8979 2019/06
• Mid-infrared tunable Vernier filter on a germanium-on-insulator photonic platform

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  OPTICS LETTERS 44 (11) 2779 - 2782 0146-9592 2019/06
• Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  AIP ADVANCES 9 (5) 2158-3226 2019/05
• ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 (19) 0021-8979 2019/05
• Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET

  Dae-Hwan Ahn; Sang-Hee Yoon; Kimihiko Kato; Taiichirou Fukui; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (4) 1862 - 1867 0018-9383 2019/04
• Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis

  Kiyoshi Endo; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Thermal properties of III-V on a SiC platform for photonic integrated circuits

  Takaaki Sanjoh; Naoki Sekine; Kimihiko Kato; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature

  Kei Sumita; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Numerical analysis of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelength

  Yoshitaka Taguchi; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators

  Masashi Yamaguchi; Takahiro Gotow; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  ACS APPLIED ELECTRONIC MATERIALS 1 (3) 311 - + 2637-6113 2019/03
• III-V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits

  Mitsuru Takenaka; Jae-Hoon Han; Frederic Boeuf; Jin-Kwon Park; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  JOURNAL OF LIGHTWAVE TECHNOLOGY 37 (5) 1474 - 1483 0733-8724 2019/03
• InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 (11) 0021-8979 2019/03
• Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

  Kwang-Won Jo; Wu-Kang Kim; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 114 (6) 0003-6951 2019/02
• High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform

  Takumi Fujigaki; Shinichi Takagi; Mitsuru Takenaka

  Optics Express OSA - The Optical Society 27 (5) 6451 - 6458 1094-4087 2019
• Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 (1) 1201 - 1208 2168-6734 2019
• Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET

  Po-Chin Huang; Tetsufumi Tanamoto; Masakazu Goto; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 65 (12) 5511 - 5517 0018-9383 2018/12
• Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate

  Jian Kang; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 26 (23) 30546 - 30555 1094-4087 2018/11
• Tunable Grating Coupler by Thermal Actuation and Thermo-Optic Effect

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS TECHNOLOGY LETTERS 30 (17) 1503 - 1506 1041-1135 2018/09
• Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

  Tae-Eon Bae; Kimihiko Kato; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 113 (6) 0003-6951 2018/08
• Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

  S. H. Yoon; D. H. Ahn; M. Takenaka; S. Takagi

  Journal of Applied Physics American Institute of Physics Inc. 123 (23) 1089-7550 2018/06 [Refereed]
  
• Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

  Tae-Eon Bae; Yuki Wakabayashi; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics

  Jian Kang; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 112 (16) 0003-6951 2018/04
• Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

  Takumi Katoh; Ryo Matsumura; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3V operation

  Kentaro Kukita; Tadayoshi Uechi; Junji Shimokawa; Masakazu Goto; Yoshinori Yokota; Shigeru Kawanaka; Tetsufumi Tanamoto; Hiroyoshi Tanimoto; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

  Ryo Matsumura; Takumi Katoh; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Ge p-channel tunneling FETs with steep phosphorus profile source junctions

  Ryotaro Takaguchi; Ryo Matsumura; Takumi Katoh; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength

  Yuki Yamaguchi; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform

  Jin-Kown Park; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 26 (4) 4842 - 4852 1094-4087 2018/02
• Ultra-low power III-V-based MOSFETs and Tunneling FETs

  Shinichi Takagi; Dae-Hwan Ahn; Takahiro Gotow; Chiaki Yokoyama; Chih-Yu Chang; Kiyoshi Endo; Kimihiko Kato; Mitsuru Takenaka

  ECS Transactions Electrochemical Society Inc. 85 (8) 27 - 37 1938-5862 2018
• A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

  Stefan Glass; Kimihiko Kato; Lidia Kibkalo; Jean-Michel Hartmann; Shinichi Takagi; Dan Buca; Siegfried Mantl; Zhao Qing-Tai

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 (1) 1070 - 1076 2168-6734 2018
• Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 (1) 950 - 955 2168-6734 2018
• Pretreatment Effects on High-k/InxGa1-xAs MOS Interface Properties and Their Physical Model

  Chiaki Yokoyama; Chi-Yu Chang; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 (1) 487 - 493 2168-6734 2018
• Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 122 (17) 0021-8979 2017/11
• InP-based photonic integrated circuit platform on SiC wafer Mitsuru Takenaka and Shinichi Takagi

  Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 25 (24) 29993 - 30000 1094-4087 2017/11
• Preface

  Katsuyoshi Washio; Toshimichi Ito; Roger Loo; Seiichi Miyazaki; Shinichi Takagi

  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 1 - 2 1369-8001 2017/11
• Design and properties of planar-type tunnel FETs using In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As quantum well

  D. H. Ahn; S. M. Ji; M. Takenaka; S. Takagi

  Journal of Applied Physics American Institute of Physics Inc. 122 (13) 1089-7550 2017/10 [Refereed]
  
• Low power Tunneling FET technologies using Ge/III-V materials

  S. Takagi; D.-H. Ahn; M. Noguchi; S.-H. Yoon; T. Gotow; K. Nishi; M. Kim; T.-E. Bae; T. Katoh; R. Matsumura; R. Takaguchi; M. Takenaka

  ECS Transactions 80 (4) 115 - 124 2017/10 [Refereed][Invited]
  
• Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics

  C. -Y. Chang; K. Endo; K. Kato; M. Takenaka; S. Takagi

  AIP ADVANCES 7 (9) 2158-3226 2017/09 [Refereed]
  
• Benchmarking Si, SiGe, and III-V/Si Hybrid SIS Optical Modulators for Datacenter Applications

  Frederic Boeuf; Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  JOURNAL OF LIGHTWAVE TECHNOLOGY 35 (18) 4047 - 4055 0733-8724 2017/09
• Effects of HfO2/Al2O3 gate stacks on electrical performance of planar InxGa1-xAs tunneling field-effect transistors

  Dae-Hwan Ahn; Sang-Hee Yoon; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 10 (8) 1882-0778 2017/08
• Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

  Jae-Hoon Han; Frederic Boeuf; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi; Mitsuru Takenaka

  NATURE PHOTONICS 11 (8) 486 - + 1749-4885 2017/08
• Effects of HfO

  Ahn Dae-Hwan; Yoon Sang-Hee; Takenaka Mitsuru; Takagi Shinichi

  Appl. Phys. Express Institute of Physics 10 (8) 84201 - 84201 1882-0778 2017/07
• Interface state generation of Al2O3/InGaAs MOS structures by electrical stress

  S. H. Yoon; C. Y. Chang; D. H. Ahn; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier B.V. 178 313 - 317 0167-9317 2017/06 [Refereed]
  
• Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers

  M. Ke; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier B.V. 178 132 - 136 0167-9317 2017/06 [Refereed]
  
• Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs

  C. -Y. Chang; Chiaki Yokoyama; M. Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 64 (6) 2519 - 2525 0018-9383 2017/06
• Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III-V-on-insulator wafer

  Naoki Sekine; Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 56 (4) 0021-4922 2017/04
• Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation

  Xiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 64 (4) 1418 - 1425 0018-9383 2017/04
• MOS interface defect control in Ge/III-V gate stacks

  S. Takagi; M. Ke; C. Y. Chang; C. Yokoyama; M. Yokoyama; T. Gotow; K. Nishi; S. H. Yoon; M. Takenaka

  ECS Transactions 80 (1) 109 - 118 1938-6737 2017
• III-V/Ge MOS device technologies for low power integrated systems

  S. Takagi; M. Noguchi; M. Kim; S. -H. Kim; C. -Y. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; M. Takenaka

  SOLID-STATE ELECTRONICS 125 82 - 102 0038-1101 2016/11 [Refereed]
  
• Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Ryo Iida; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 9 (11) 1882-0778 2016/11
• InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 109 (21) 0003-6951 2016/11
• Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Rena Suzuki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 109 (18) 0003-6951 2016/10
• Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 120 (12) 0021-8979 2016/09
• Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

  M. Ke; X. Yu; C. Chang; M. Takenaka; S. Takagi

  Applied Physics Letters 109 (3) 0003-6951 2016/07
• Novel Ge waveguide platform on Ge-oninsulator wafer for mid-infrared photonic integrated circuits

  Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 24 (11) 1855 - 1864 1094-4087 2016/05
• Low-dark-current waveguide InGaAs metal-semiconductor-metal photodetector monolithically integrated with InP grating coupler on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Low resistivity lateral P-I-N junction formed by Ni-InGaAsP alloy for carrier injection InGaAsP photonic devices

  Jin-Kwon Park; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Effect of III-V on insulator structure on quantum well intermixing

  Seiya Takashima; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  SOLID-STATE ELECTRONICS 117 77 - 87 0038-1101 2016/03
• Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

  J. Kang; X. Yu; M. Takenaka; S. Takagi

  Materials Science in Semiconductor Processing Elsevier Ltd 42 259 - 263 1369-8001 2016/02 [Refereed]
  
• Low temperature formation of higher- k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

  R. Zhang; P. C. Huang; N. Taoka; M. Yokoyama; M. Takenaka; S. Takagi

  Applied Physics Letters American Institute of Physics Inc. 108 (5) 0003-6951 2016/02 [Refereed]
  
• First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 24 (3) 1979 - 1985 1094-4087 2016/02
• Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (2) 558 - 564 0018-9383 2016/02
• Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge

  M. Takenaka; Y. Kim; J. Han; J. Kang; S. Takagi

  ECS Transactions Electrochemical Society Inc. 75 (8) 447 - 459 1938-6737 2016 [Refereed]
  
• InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

  Jin-Kwon Park; Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  MRS ADVANCES 1 (48) 3295 - 3300 2059-8521 2016
• Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut (TM) GeOI substrates

  Xiao Yu; Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  SOLID-STATE ELECTRONICS 115 120 - 125 0038-1101 2016/01
• Fabrication and MOS interface properties of ALD AlYO<inf>3</inf>/GeO<inf>x</inf>/Ge gate stacks with plasma post oxidation

  M. Ke; X. Yu; R. Zhang; J. Kang; C. Chang; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier 147 244 - 248 0167-9317 2015/11 [Refereed]
  
• Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOSFETs

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 36 (11) 1183 - 1185 0741-3106 2015/11
• Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

  Xiao Yu; Jian Kang; Rui Zhang; Wei-Li Cai; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 147 196 - 200 0167-9317 2015/11
• Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

  C. -Y. Chang; O. Ichikawa; T. Osada; M. Hata; H. Yamada; M. Takenaka; S. Takagi

  JOURNAL OF APPLIED PHYSICS 118 (8) 0021-8979 2015/08 [Refereed]
  
• Surface Leakage Reduction in MSM InGaAs Photodetector on III-V CMOS Photonics Platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  IEEE PHOTONICS TECHNOLOGY LETTERS 27 (14) 1569 - 1572 1041-1135 2015/07
• High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

  Munetaka Noguchi; SangHyeon Kim; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 118 (4) 0021-8979 2015/07
• Suppression of dark current in GeOx-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

  Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 23 (13) 16967 - 16976 1094-4087 2015/06
• Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures

  Koichi Nishi; Masafumi Yokoyama; Haruki Yokoyama; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 8 (6) 1882-0778 2015/06
• III-V/Ge channel MOS device technologies in nano CMOS era

  Shinichi Takagi; Rui Zhang; Junkyo Suh; Sang-Hyeon Kim; Masafumi Yokoyama; Koichi Nishi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (6) 0021-4922 2015/06
• Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 23 (9) 12354 - 12361 1094-4087 2015/05
• Improvement of S-factor method for evaluation of MOS interface state density

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 0021-4922 2015/04
• Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation

  Wu-Kang Kim; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 0021-4922 2015/04
• Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators With Vertical p-n Junction

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF QUANTUM ELECTRONICS 51 (4) 0018-9197 2015/04
• Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

  Katsuhisa Tanaka; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 0021-4922 2015/04
• Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 106 (12) 0003-6951 2015/03
• Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 106 (7) 0003-6951 2015/02
• MOS interface control technologies for advanced III-V/Ge devices

  S. Takagi; C. Y. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; J. H. Han; M. Takenaka

  ECS Transactions Electrochemical Society Inc. 69 (5) 37 - 51 1938-5862 2015 [Refereed]
  
• Tunneling FET technologies using III-V and Ge materials

  S. Takagi; M. Kim; M. Noguchi; K. Nishi; M. Takenaka

  ECS Transactions Electrochemical Society Inc. 69 (10) 99 - 108 1938-5862 2015 [Refereed]
  
• High performance III-V-on-insulator MOSFETs on Si realized by direct wafer bonding applicable to large wafer size

  S. Takagi; S. H. Kim; Y. Ikku; M. Yokoyama; R. Nakane; J. Li; Y. C. Kao; M. Takenaka

  ECS Transactions Electrochemical Society Inc. 66 (5) 27 - 35 1938-6737 2015 [Refereed]
  
• Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect

  Minsoo Kim; Yuki K. Wakabayashi; Masafumi Yokoyama; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (1) 9 - 15 0018-9383 2015/01
• Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates

  Xiao Yu; Rui Zhang; Jian Kang; Tatsuro Maeda; Taro Itatani; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  ECS SOLID STATE LETTERS 4 (2) P15 - P18 2162-8742 2015
• Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111) A surfaces

  K. Nishi; M. Yokoyama; H. Yokoyama; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 105 (23) 233503  0003-6951 2014/12 [Refereed]
  
• A Ge Ultrathin-Body n-Channel Tunnel FET: Effects of Surface Orientation

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (11) 3594 - 3600 0018-9383 2014/11
• Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (11) 3668 - 3675 0018-9383 2014/11
• Sb-Doped S/D Ultrathin Body Ge-on Insulator nMOSFET Fabricated by Improved Ge Condensation Process

  W. -K. Kim; Kouichi Kuroda; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (10) 3379 - 3385 0018-9383 2014/10
• Dielectric Thin Films for Future Electron Devices: Science and Technology FOREWORD

  Hiroyuki Kageshima; Shinichi Takagi; Renichi Yamada

  JAPANESE JOURNAL OF APPLIED PHYSICS 53 (8) 3 - 3 0021-4922 2014/08
• Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

  SangHyeon Kim; Yuki Ikku; Masafumi Yokoyama; Ryosho Nakane; Jian Li; Yung-Chung Kao; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 105 (4) 0003-6951 2014/07
• Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (7) 2316 - 2323 0018-9383 2014/07
• Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (26) 0003-6951 2014/06
• Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

  Masafumi Yokoyama; Yuji Asakura; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (26) 0003-6951 2014/06
• Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (5) 1335 - 1340 0018-9383 2014/05
• High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability

  Sang-Hyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (5) 1354 - 1360 0018-9383 2014/05
• Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

  Minsoo Kim; Younghyun Kim; Masafumi Yokoyama; Ryosho Nakane; SangHyeon Kim; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 557 298 - 301 0040-6090 2014/04
• Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator

  Younghyun Kim; Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 22 (7) 7458 - 7464 1094-4087 2014/04
• Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  SCIENTIFIC REPORTS 4 2045-2322 2014/04
• Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  THIN SOLID FILMS 557 342 - 345 0040-6090 2014/04
• Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures

  Nozomi Yoshida; Eiji Waki; Manabu Arai; Kimiyoshi Yamasaki; Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 557 237 - 240 0040-6090 2014/04
• Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 115 (9) 0021-8979 2014/03
• Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

  SangHyeon Kim; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (11) 0003-6951 2014/03
• Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

  Masafumi Yokoyama; Koichi Nishi; Sanghyeon Kim; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (9) 0003-6951 2014/03
• Impact of Plasma Postoxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs

  Rui Zhang; Ju-Chin Lin; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (2) 416 - 422 0018-9383 2014/02
• III-V/Ge device engineering for CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  Materials Science Forum Trans Tech Publications Ltd 783-786 2028 - 2033 1662-9752 2014
• Material challenges and opportunities in Ge/III-V channel MOSFETs

  S. Takagi; S. H. Kim; M. Yokoyama; K. Nishi; R. Zhang; M. Takenaka

  ECS Transactions Electrochemical Society Inc. 64 (11) 99 - 110 1938-6737 2014 [Refereed]
  
• InGaAs Msm photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  IEICE ELECTRONICS EXPRESS 11 (16) 1349-2543 2014
• Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

  Koichi Nishi; Masafumi Yokoyama; Sanghyeon Kim; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 115 (3) 0021-8979 2014/01
• Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (12) 4213 - 4218 0018-9383 2013/12
• Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 13 (4) 456 - 462 1530-4388 2013/12
• High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (10) 3342 - 3350 0018-9383 2013/10
• Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 114 (16) 0021-8979 2013/10
• Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

  Shinichi Takagi; Rui Zhang; Mitsuru Takenaka

  MICROELECTRONIC ENGINEERING 109 389 - 395 0167-9317 2013/09
• Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 103 (14) 0003-6951 2013/09
• Formation of III-V-on-insulator structures on Si by direct wafer bonding

  Masafumi Yokoyama; Ryo Iida; Yuki Ikku; Sanghyeon Kim; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28 (9) 0268-1242 2013/09
• Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

  Sanghyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (8) 2512 - 2517 0018-9383 2013/08
• Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth

  Younghyun Kim; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 21 (17) 19615 - 19623 1094-4087 2013/08
• Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sung-Hoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON NANOTECHNOLOGY 12 (4) 621 - 628 1536-125X 2013/07
• Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

  Jaehoon Han; Rui Zhang; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 6 (5) 1882-0778 2013/05
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si

  Sung-Ho Jeon; Noriyuki Taoka; Hiroaki Matsumoto; Kiyotaka Nakano; Susumu Koyama; Hiroshi Kakibayasi; Koji Araki; Moriya Miyashita; Koji Izunome; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 52 (4) 0021-4922 2013/04
• InGaAsP Grating Couplers Fabricated Using Complementary-Metal-Oxide-Semiconductor-Compatible III-V-on-Insulator on Si

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 6 (4) 1882-0778 2013/04
• High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (3) 927 - 934 0018-9383 2013/03
• Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 102 (8) 0003-6951 2013/02
• Performance enhancement technologies in III-V/Ge MOSFETs

  S. Takagi; R. Zhang; S. H. Kim; M. Yokoyama; M. Takenaka

  ECS Transactions Electrochemical Society Inc. 58 (9) 137 - 148 1938-6737 2013 [Refereed]
  
• III-V/Ge MOS transistor technologies for future ULSI

  S. Takagi; M. Takenaka

  ECS Transactions 54 (1) 39 - 54 1938-5862 2013 [Refereed]
  
• III-V/Ge CMOS device technologies for high performance logic applications

  S. Takagi; M. Yokoyama; S. H. Kim; R. Zhang; R. Suzuki; N. Taoka; M. Takenaka

  ECS Transactions 53 (3) 85 - 96 1938-5862 2013 [Refereed]
  
• Limiting factors of channel mobility in III-V/Ge MOSFETs

  S. Takagi; S. H. Kim; R. Zhang; N. Taoka; M. Yokoyama; M. Takenaka

  ECS Transactions 53 (3) 107 - 122 1938-5862 2013 [Refereed]
  
• Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

  R. Zhang; J. C. Lin; X. Yu; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 97 - 100 0167-9317 2013 [Refereed]
  
• Impact of plasma post-nitridation on HfO2/Al2O 3/SiGe gate stacks toward EOT scaling

  J. H. Han; R. Zhang; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 266 - 269 0167-9317 2013 [Refereed]
  
• Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

  C. Y. Chang; M. Yokoyama; S. H. Kim; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 28 - 30 0167-9317 2013 [Refereed]
  
• Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

  Yuki Ikku; Masafumi Yokoyama; Osamu Ichikawa; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 20 (26) B357 - B364 1094-4087 2012/12
• Formation of Thin Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 (12) 0021-4922 2012/12
• Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

  Takuya Hoshii; Sunghoon Lee; Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; Hishashi Yamada; Masahiko Hata; Tetsuji Yasuda; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 112 (7) 0021-8979 2012/10
• Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

  Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; Sang-Hyeon Kim; Takuya Hoshii; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 112 (8) 0021-8979 2012/10
• Uniformity improvement of selectively-grown InGaAs micro-discs on Si

  Masakazu Sugiyama; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano

  JOURNAL OF CRYSTAL GROWTH 352 (1) 229 - 234 0022-0248 2012/08
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

  Masafumi Yokoyama; Sanghyeon Kim; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tatsuro Maeda; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 (7) 1882-0778 2012/07
• Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb

  Cezar B. Zota; Sang-Hyeon Kim; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 (7) 1882-0778 2012/07
• Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing

  Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Akihiro Ohtake; Hisashi Yamada; Masahiko Hata; Sunghoon Lee; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 (6) 0021-4922 2012/06
• Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 100 (19) 0003-6951 2012/05
• High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  APPLIED PHYSICS LETTERS 100 (21) 0003-6951 2012/05
• Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping

  Mitsuru Takenaka; Kiyohito Morii; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  OPTICS EXPRESS 20 (8) 8718 - 8725 1094-4087 2012/04
• 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

  R. Suzuki; N. Taoka; M. Yokoyama; S. Lee; S. H. Kim; T. Hoshii; T. Yasuda; W. Jevasuwan; T. Maeda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 100 (13) 3  0003-6951 2012/03 [Refereed]
  
• Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

  Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Masahiko Hata; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  MATERIALS 5 (3) 404 - 414 1996-1944 2012/03
• In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 100 (7) 0003-6951 2012/02
• High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation

  Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 59 (2) 335 - 341 0018-9383 2012/02
• MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

  S. Takagi; R. Zhang; R. Suzuki; N. Taoka; M. Yokoyama; M. Takenaka

  ECS Transactions 50 (4) 107 - 122 1938-5862 2012 [Refereed]
  
• Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3

  R. Zhang; P. C. Huang; J. C. Lin; M. Takenaka; S. Takagi

  ECS Transactions 50 (9) 699 - 706 1938-5862 2012 [Refereed]
  
• Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 (1) 1882-0778 2012/01
• Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

  Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF QUANTUM ELECTRONICS 48 (1) 8 - 16 0018-9197 2012/01
• Effect of Sample Thickness on SiO2/Si Interface Roughness Characterization through Transmission Electron Microscope Measurements in Strained-Si MOSFETs

  Yi Zhao; Hirosaki Matsumoto; Susumu Koyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159 (1) H57 - H60 0013-4651 2012
• Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

  Ryo Iida; Sang-Hyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Sang-Hoon Lee; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 110 (12) 0021-8979 2011/12
• Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

  Noriyuki Miyata; Hiroyuki Ishii; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 88 (12) 3459 - 3461 0167-9317 2011/12
• High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 (11) 1882-0778 2011/11
• Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 99 (14) 0003-6951 2011/10
• Accurate evaluation of Ge metal-insulator-semiconductor interface properties

  Noriyuki Taoka; Keiji Ikeda; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 110 (6) 0021-8979 2011/09
• Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers

  Masafumi Yokoyama; Ryo Iida; Sanghyeon Kim; Noriyuki Taoka; Yuji Urabe; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 32 (9) 1218 - 1220 0741-3106 2011/09
• Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile Strain

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 32 (8) 1005 - 1007 0741-3106 2011/08
• Impact of GeOx interfacial layer thickness on Al 2O3/Ge MOS interface properties

  R. Zhang; T. Iwasaki; N. Taoka; M. Takenaka; S. Takagi

  Microelectronic Engineering 88 (7) 1533 - 1536 0167-9317 2011/07 [Refereed]
  
• On the mechanisms limiting mobility in InP/InGaAs buried channel nMISFETs

  Y. Urabe; T. Yasuda; H. Ishii; T. Itatani; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  MICROELECTRONIC ENGINEERING 88 (7) 1076 - 1078 0167-9317 2011/07 [Refereed]
  
• AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Takuya Hoshii; Ryo Iida; Sunghoon Lee; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 88 (7) 1087 - 1090 0167-9317 2011/07
• Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 98 (24) 0003-6951 2011/06
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

  Masafumi Yokoyama; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 (5) 1882-0778 2011/05
• High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy

  Momoko Deura; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yukihiro Shimogaki; Yoshiaki Nakano; Masakazu Sugiyama

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (4) 0021-4922 2011/04
• Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 109 (8) 0021-8979 2011/04
• Al2 O3 / GeOx /Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

  R. Zhang; T. Iwasaki; N. Taoka; M. Takenaka; S. Takagi

  Applied Physics Letters 98 (11) 0003-6951 2011/03 [Refereed]
  
• Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

  Sanjeewa Dissanayake; Yi Zhao; S. Sugahara; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 109 (3) 0021-8979 2011/02
• Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 (2) 1882-0778 2011/02
• Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature

  Mizuno Tomohisa; Moriyama Yoshihiko; Tezuka Tsutomu; Sugiyama Naoharu; Takagi Shin-ichi

  Jpn J Appl Phys The Japan Society of Applied Physics 50 (1) 10107 - 010107-8 0021-4922 2011/01
• Device and integration technologies of III-V/Ge channel CMOS

  S. Takagi; M. Yokoyama; S. H. Kim; R. Zhang; M. Takenaka

  ECS Transactions 41 (7) 203 - 218 1938-5862 2011 [Refereed]
  
• Prospective and critical issues of III-V/Ge CMOS on Si platform

  S. Takagi; M. Takenaka

  ECS Transactions 35 (3) 279 - 298 1938-5862 2011 [Refereed]
  
• MOS Interface Control Technologies for III-V/Ge Channel MOSFETs

  S. Takagi; R. Zhang; T. Hoshii; N. Taoka; M. Takenaka

  PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 41 (3) 3 - 20 1938-5862 2011 [Refereed]
  
• Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers

  Yosuke Nakakita; Ryosho Nakakne; Takashi Sasada; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) 0021-4922 2011/01
• Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Full Ballistic Transport

  Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) 0021-4922 2011/01
• High Mobility Ge-based CMOS Device Technologies

  Shinichi Takagi; Sanjeewa Dissanayake; Mitsuru Takenaka

  TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS 470 1 - 7 1013-9826 2011
• Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal-Organic Source

  Mitsuru Takenaka; Kiyohito Morii; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) 0021-4922 2011/01
• Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

  Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY 158 (8) G178 - G184 0013-4651 2011
• Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

  Yuji Urabe; Masafumi Yokoyama; Hideki Takagi; Tetsuji Yasuda; Noriyuki Miyata; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 97 (25) 0003-6951 2010/12
• Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 108 (10) 0021-8979 2010/11
• A Novel Characterization Scheme of Si/SiO2 Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

  Yi Zhao; Hirosaki Matsumoto; Takeshi Sato; Susumu Koyama; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 57 (9) 2057 - 2066 0018-9383 2010/09
• Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors

  Weber Olivier; Takenaka Mitsuru; Takagi Shin-ichi

  Jpn J Appl Phys The Japan Society of Applied Physics 49 (7) 74101 - 074101-5 0021-4922 2010/07
• Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

  Momoko Deura; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 312 (8) 1353 - 1358 0022-0248 2010/04
• Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si

  Yoshiyuki Kondo; Momoko Deura; Yuki Terada; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 312 (8) 1348 - 1352 0022-0248 2010/04
• III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 96 (14) 0003-6951 2010/04
• High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping

  Morii, K.; Iwasaki, T.; Nakane, R.; Takenaka, M.; Takagi, S.

  IEEE Electron Device Letters 31 (10) 0741-3106 2010
• III-V-On-Insulator MOSFETs on Si Substrates Fabricated by Direct Bonding Technique

  S. Takagi; M. Yokoyama; H. Takagi; Y. Urabe; T. Yasuda; H. Yamada; M. Hata; M. Takenaka

  SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE 33 (4) 359 - 370 1938-5862 2010 [Refereed]
  
• Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

  Hoshii T; Yokoyama M; Yamada H; Hata M; Yasuda T; Takenaka M; Takagi S

  Applied Physics Letters 97 (13) 3  2010 [Refereed]
  
• Critical factors for enhancement of compressive strain in SGOI layers fabricated by Ge condensation technique

  S. Takagi; K. Tomiyama; S. Dissanayake; M. Takenaka

  ECS Transactions 33 (6) 501 - 509 1938-5862 2010 [Refereed]
  
• Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

  T. Haimoto; T. Hoshii; S. Nakagawa; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 96 (1) 0003-6951 2010/01 [Refereed]
  
• High quality thin body III-V-on-insulator channel layer transfer on Si wafer using direct wafer bonding

  M. Yokoyama; T. Yasuda; H. Takagi; H. Yamada; Y. Urabe; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  ECS Transactions 33 (4) 391 - 401 1938-5862 2010
• High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

  Sanjeewa Dissanayake; Kentaro Tomiyama; Satoshi Sugahara; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 3 (4) 1882-0778 2010
• Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal-Organic Vapor Phase Epitaxy

  Yoshiyuki Kondo; Momoko Deura; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (12) 0021-4922 2010
• High Electron Mobility Ge n-Channel Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

  Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 3 (6) 1882-0778 2010
• Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal-Oxide-Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

  Yukio Nakabayashi; Takamitsu Ishihara; Toshinori Numata; Ken Uchida; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 0021-4922 2010
• Effect of Ge Metal-Insulator-Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 0021-4922 2010
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

  Hiroyuki Ishii; Noriyuki Miyata; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 (12) 1882-0778 2009/12
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 (12) 1882-0778 2009/12
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 (12) 1882-0778 2009/12
• Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

  Yoshihiko Moriyama; Norio Hirashita; Koji Usuda; Shu Nakaharai; Naoharu Sugiyama; Eiji Toyoda; Shin-ichi Takagi

  Applied Surface Science Elsevier 256 (3) 823 - 829 0169-4332 2009/11
• Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

  Takashi Sasada; Yosuke Nakakita; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 106 (7) 0021-8979 2009/10
• On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 30 (9) 987 - 989 0741-3106 2009/09
• Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

  Toshifumi Irisawa; Kimitoshi Okano; Takuya Horiuchi; Hiroshi Itokawa; Ichiro Mizushima; Koji Usuda; Tsutomu Tezuka; Naoharu Sugiyama; Shin-ichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 (8) 1651 - 1658 0018-9383 2009/08
• Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

  Noriyuki Taoka; Toyoji Yamamoto; Masatomi Harada; Yoshimi Yamashita; Naoharu Sugiyama; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 106 (4) 0021-8979 2009/08
• Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 (5) 1152 - 1156 0018-9383 2009/05
• Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

  Kunihiro Suzuki; Keiji Ikeda; Yoshimi Yamashita; Masaomi Harada; Noriyuki Taoka; Osamu Kiso; Toyoji Yamamoto; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 (4) 627 - 633 0018-9383 2009/04
• Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

  Kiyohito Morii; Sanjeewa Dissanayake; Satoshi Tanabe; Ryosho Nakane; Mitsuru Takenaka; Satoshi Sugahara; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 (4) 0021-4922 2009/04
• Investigation of InAlAs Oxide/InP Metal-Oxide-Semiconductor Structures Formed by Wet Thermal Oxidation

  Shota Nakagawa; Masafumi Yokoyama; Osamu Ichikawa; Masahiko Hata; Masaaki Tanaka; Mituru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 (4) 0021-4922 2009/04
• Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes

  Tsutomu Tezuka; Eiji Toyoda; Toshifumi Irisawa; Norio Hirashita; Yoshihiko Moriyama; Naoharu Sugiyama; Koji Usuda; Shin-Ichi Takagi

  Applied Physics Letters 94 (8) 0003-6951 2009
• Interfacial control and electrical properties of Ge MOS structures

  S. Takagi; N. Taoka; M. Takenaka

  ECS Transactions 19 (2) 67 - 85 1938-5862 2009 [Refereed]
  
• Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Journal of Applied Physics 105 (2) 0021-8979 2009
• In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

  M. Deura; Y. Kondo; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

  ECS Transactions 25 (8 PART 1) 521 - 524 1938-5862 2009
• Ge/III-V channel engineering for future CMOS

  S. Takagi; M. Sugiyama; T. Yasuda; M. Takenaka

  ECS Transactions 19 (5) 9 - 20 1938-5862 2009
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

  Momoko Deura; Takuya Hoshii; Takahisa Yamamoto; Yuichi Ikuhara; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  APPLIED PHYSICS EXPRESS 2 (1) 1882-0778 2009/01
• Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique

  T. Irisawa; T. Numata; N. Hirashita; Y. Moriyama; S. Nakaharai; T. Tezuka; N. Sugiyama; S. Takagi

  Thin Solid Films 517 (1) 167 - 169 0040-6090 2008/11
• Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si

  Momoko Deura; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 310 (23) 4768 - 4771 0022-0248 2008/11
• (110) Ultrathin GOI layers fabricated by Ge condensation method

  Sanjeewa Dissanayake; Yusuke Shuto; Satoshi Sugahara; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 517 (1) 178 - 180 0040-6090 2008/11
• Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process

  Hirashita Norio; Moriyama Yoshihiko; Nakaharai Shu; Irisawa Toshifumi; Sugiyama Naoharu; Takagi Shin-ichi

  Applied Physics Express The Japan Society of Applied Physics 1 (10) 101401 - 101401-3 1882-0778 2008/10
• Influence of elastic and inelastic phonon scattering on the drive current of quasi-ballistic MOSFETs

  Tsuchiya Hideaki; Takagi Shin-ichi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 55 (9) 2397 - 2402 0018-9383 2008/09
• NMR study on the formation mechanism of beta-SiAlON from zeolite by nitridation using ammonia gas

  Toru Wakihara; Yuri Saito; Junichi Tatami; Katsutoshi Komeya; Takeshi Meguro; Kenneth J. D. Mackenzie; Shinichi Takagi; Masahiro Yokouchi

  JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 116 (1357) 980 - 983 1882-0743 2008/09
• Experimental examination and physical understanding of the Coulomb scattering mobility in strained-Si nMOSFETs

  Olivier Weber; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (9) 2386 - 2396 0018-9383 2008/09
• Evidence of low interface trap density in GeO(2)/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

  Hiroshi Matsubara; Takashi Sasada; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 93 (3) 0003-6951 2008/07
• Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

  Sugiyama Naoharu; Numata Toshinori; Hirashita Norio; Irisawa Toshifumi; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 47 (6) 4403 - 4407 0021-4922 2008/06
• Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

  Noriyuki Taoka; Masatomi Harada; Yoshimi Yamashita; Toyoji Yamamoto; Naoharu Sugiyama; Shin-Ichi Takagi

  APPLIED PHYSICS LETTERS 92 (11) 0003-6951 2008/03
• Device design and electron transport properties of uniaxially strained-SOI tri-gate nMOSFETs

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 55 (2) 649 - 654 0018-9383 2008/02
• Physical understanding of strain-induced modulation of gate oxide reliability in MOSFETs

  Toshifumi Irisawa; Toshinori Numata; Eiji Toyoda; Norio Hirashita; Tsutomu Tezuka; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 55 (11) 3159 - 3166 0018-9383 2008
• Uniaxially strained Si/SiGe wire-channel transistors

  T. Tezuka; T. Irisawa; E. Toyoda; N. Sugiyama; S. Takagi

  ECS Transactions 13 (1) 263 - 274 1938-5862 2008
• Uniaxially strained SGOI and SSOI channels for high performance multi-gate CMOS

  T. Irisawa; T. Numata; T. Tezuka; K. Usuda; N. Hirashita; Y. Moriyama; N. Sugiyama; S. Takagi

  ECS Transactions 16 (10) 367 - 379 1938-5862 2008
• Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas

  Takuya Hoshii; Momoko Deura; Masakazu Sugiyama; Ryosho Nakane; Satoshi Sugahara; Mitsuru Takenaka; Yoshiaki Nakano; Shinichi Takagi

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 (9) 2733 - + 1862-6351 2008
• Carrier-transport-enhanced channel CMOS for improved power consumption and performance

  Shinichi Takagi; Toshifurni Irisawa; Tsutomu Tezuka; Toshinori Numata; Shu Nakaharai; Norio Hirashita; Yoshihiko Moriyama; Koji Usuda; Eiji Toyoda; Sanjeewa Dissanayake; Masato Shichijo; Ryosho Nakane; Satoshi Sugahara; Mitsuru Takenaka; Naoharu Sugiyama

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (1) 21 - 39 0018-9383 2008/01
• Gate dielectric formation and MIS interface characterization on Ge

  S. Takagi; T. Maeda; N. Taoka; M. Nishizawa; Y. Morita; K. Ikeda; Y. Yamashita; M. Nishikawa; H. Kumagai; R. Nakane; S. Sugahara; N. Sugiyama

  MICROELECTRONIC ENGINEERING 84 (9-10) 2314 - 2319 0167-9317 2007/09 [Refereed]
  
• Fabrication of III-V on insulator structures on si using microchannel epitaxy with a two-step growth technique

  Masato Shichijo; Ryosho Nakane; Satoshi Sugahara; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (9A) 5930 - 5934 0021-4922 2007/09
• Hole-mobility enhancement in Ge-rich strained SiGe-on-insulator pMOSFETs at high temperatures

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Naoharu Sugiyama; Akihito Tanabe; Koji Usuda; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 54 (5) 1249 - 1252 0018-9383 2007/05
• Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

  Uehara Takashi; Matsubara Hiroshi; Nakane Ryosho; Sugahara Satoshi; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 46 (4) 2117 - 2121 0021-4922 2007/04
• Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

  Hoshii Takuya; Sugahara Satoshi; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 46 (4) 2122 - 2126 0021-4922 2007/04
• Device structures and carrier transport properties of advanced CMOS using high mobility channels

  S. Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Numata; K. Usuda; N. Sugiyama; M. Shichijo; R. Nakane; S. Sugahara

  Solid-State Electronics 51 (4 SPEC. ISS.) 526 - 536 0038-1101 2007/04
• Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures

  Tatsuro Maeda; Masayasu Nishizawa; Yukinori Morita; Shinichi Takagi

  APPLIED PHYSICS LETTERS 90 (7) 0003-6951 2007/02
• Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process

  Tsutomu Tezuka; Norio Hirashita; Yoshihiko Moriyama; Shu Nakaharai; Naoharu Sugiyama; Shin-Ichi Takagi

  Applied Physics Letters 90 (18) 0003-6951 2007
• Strained SOI/SGOI dual-channel CMOS technology based on the Ge condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Toshinori Numata; Toshifumi Irisawa; Koji Usuda; Naoharu Sugiyama; Tomohisa Mizuno; Shin-Ichi Takagi

  Semiconductor Science and Technology 22 (1) S93 - S98 0268-1242 2007/01
• Effects of ambient conditions in thermal treatment for Ge(001) surfaces on Ge-MIS interface properties

  Noriyuki Taoka; Keiji Ikeda; Yoshimi Yamashita; Naoharu Sugiyama; Shin-ichi Takagi

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 (1) S114 - S117 0268-1242 2007/01
• The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Semiconductor Science and Technology 22 (1) 0268-1242 2007/01
• The formation of SGOI structures with low dislocation density by a two-step oxidation and condensation method

  N. Sugiyama; S. Nakaharai; N. Hirashita; T. Tezuka; Y. Moriyama; K. Usuda; S. Takagi

  Semiconductor Science and Technology 22 (1) 0268-1242 2007/01
• Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method

  K. Usuda; T. Irisawa; T. Numata; N. Hirashita; S. Takagi

  Semiconductor Science and Technology 22 (1) 0268-1242 2007/01
• Mobility-enhanced device technologies using SiGe/Ge MOS channels

  S. Takagi; T. Irisawa; T. Tezuka; S. Nakaliarai; T. Numata; N. Hirashita; Y. Moriyama; K. Usuda; S. Dissanayake; M. Tekenaka; S. Sugahara; N. Sugiyama

  ECS Transactions 11 (6) 61 - 74 1938-5862 2007
• Low-temperature mobilities and energy loss rates of two-dimensional electrons in Si inversion layers

  Kyung Hwa Park; Kazuhiko Hirakawa; Shinichi Takagi

  PHYSICS OF SEMICONDUCTORS, PTS A AND B 893 601 - + 0094-243X 2007
• Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

  Shinichi Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Maeda; T. Numata; K. Ikeda; N. Sugiyama

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 135 (3) 250 - 255 0921-5107 2006/12
• High-performance uniaxially strained SiGe-on-insulator pMOSFETs fabricated by lateral-strain-relaxation technique

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Norio Hirashita; Naoharu Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 53 (11) 2809 - 2815 0018-9383 2006/11
• Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contact

  Tatsuro Maeda; Shinichi Takagi; Tsuyoshi Ohnishi; Mikk Lippmaa

  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9 (4-5) 706 - 710 1369-8001 2006/08
• Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

  Tatsuro Maeda; Tetsuji Yasuda; Masayasu Nishizawa; Noriyuki Miyata; Yukinori Morita; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 100 (1) 0021-8979 2006/07
• Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

  Tsutomu Tezuka; Yoshihiko Moriyama; Shu Nakaharai; Naoharu Sugiyama; Norio Hirashita; Eiji Toyoda; Yoshiji Miyamura; Shin-ichi Takagi

  Thin Solid Films 508 (1-2) 251 - 255 0040-6090 2006/06
• Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

  Keiji Ikeda; Tatsuro Maeda; Shin-ichi Takagi

  THIN SOLID FILMS 508 (1-2) 359 - 362 0040-6090 2006/06
• Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

  Tatsuro Maeda; Keiji Ikeda; Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shinichi Takagi

  THIN SOLID FILMS 508 (1-2) 346 - 350 0040-6090 2006/06
• Performance enhancement of partially and fully depleted strained-SOI MOSFETs

  Toshinori Numata; Toshifumi Irisawa; Tsutomu Tezuka; Junji Koga; Norio Hirashita; Koji Usuda; Eiji Toyoda; Yoshiji Miyamura; Akihito Tanabe; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 53 (5) 1030 - 1038 0018-9383 2006/05
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

  Ishihara Takamitsu; Uchida Ken; Koga Junji; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 45 (4) 3125 - 3132 0021-4922 2006/04
• Effects of interfacial layers formed by plasma oxidation and nitridation on HfO2/Ge-MIS properties

  T. Maeda; Y. Morita; M. Nishizawa; S. Takagi

  ECS Transactions 3 (7) 551 - 558 1938-5862 2006 [Refereed]
  
• Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

  Y. Moriyama; N. Hirashita; E. Toyoda; K. Usuda; S. Nakaharai; N. Sugiyama; S. Takagi

  ECS Transactions 3 (7) 1183 - 1190 1938-5862 2006 [Refereed]
  
• Fabrication and electrical characterization of strained Si-on-insulator/Strained SiGe-on-insulator dual channel CMOS structures with high-mobility channels

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Naoharu Sugiyama; Tomohisa Mizuno; Shinichi Takagi

  IEEJ Transactions on Electronics, Information and Systems 126 (11) 1332 - 1338 0385-4221 2006
• Prospects and critical issues on Ge MOS technologies

  S. Takagi; N. Taoka; S. Nakaharai; K. Ikeda; T. Tezuka; Y. Yamashita; Y. Moriyama; T. Maeda; N. Sugiyama

  ECS Transactions 3 (7) 823 - 829 1938-5862 2006
• Ge condensation technologies for advanced MOSFETs on SGOI and GOI substrates

  N. Sugiyama; T. Tezuka; T. Irisawa; K. Usuda; Y. Moriyama; S. Nakaharai; N. Hirashita; S. Takagi

  ECS Transactions 3 (7) 1015 - 1022 1938-5862 2006
• Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

  Koji Usuda; Toshinori Numata; Toshifumi Irisawa; Norio Hirashita; Shinichi Takagi

  Materials Science and Engineering B: Solid-State Materials for Advanced Technology 124-125 (SUPPL.) 143 - 147 0921-5107 2005/12
• On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

  Toshifumi Irisawa; Toshinori Numata; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 52 (5) 993 - 998 0018-9383 2005/05
• Sub-band structure engineering for advanced CMOS channels

  S Takagi; T Mizuno; T Tezuka; N Sugiyama; S Nakaharai; T Numata; J Koga; K Uchida

  SOLID-STATE ELECTRONICS 49 (5) 684 - 694 0038-1101 2005/05 [Refereed]
  
• High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Electron Device Letters 26 (4) 243 - 245 0741-3106 2005/04
• High-performance (1 1 0)-surface strained-SOI MOSFETs

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Materials Science in Semiconductor Processing 8 (1-3 SPEC. ISS.) 327 - 336 1369-8001 2005/02
• High mobility Ge-on-Insulator p-channel MOSFETs using Pt Germanide Schottky source/drain

  Tatsuro Maeda; Keiji Ikeda; Shu Nakaharai; Tsutomu Tezuka; Naoham Sugiyama; Yoshihiko Moriyama; Shinichi Takagi

  IEEE Electron Device Letters 26 (2) 102 - 104 0741-3106 2005/02
• Local strain evaluation of strained-SOI structures

  Koji Usuda; Tomohisa Mizuno; Toshinori Numata; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Shinku/Journal of the Vacuum Society of Japan Vacuum Society of Japan 48 (1) 18 - 22 0559-8516 2005
• (110)-Surface strained-SOI CMOS devices

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers Inc. 52 (3) 367 - 374 0018-9383 2005
• High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S.

  Ieee Transactions on Electron Devices 52 (12) 2690 - 2696 0018-9383 2005 [Refereed]
  
• Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

  T Maeda; T Yasuda; M Nishizawa; N Miyata; Y Morita; S Takagi

  APPLIED PHYSICS LETTERS 85 (15) 3181 - 3183 0003-6951 2004/10 [Refereed]
  
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer

  Koga Junji; Ishihara Takamitsu; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 43 (4) 1699 - 1703 0021-4922 2004/04
• Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

  Shin-Ichi Takagi; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Toshinori Numata; Koji Usuda; Yoshihiko Moriyama; Shu Nakaharai; Junji Koga; Akihito Tanabe; Tatsuro Maeda

  Applied Surface Science Elsevier 224 (1-4) 241 - 247 0169-4332 2004/03
• Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

  Koji Usuda; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Applied Surface Science Elsevier 224 (1-4) 113 - 116 0169-4332 2004/03
• Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

  N. Sugiyama; Y. Moriyama; S. Nakaharai; T. Tezuka; T. Mizuno; S. Takagi

  Applied Surface Science 224 (1-4) 188 - 192 0169-4332 2004/03 [Refereed]
  
• Thin-film strained-SOI CMOS devices - Physical mechanisms for reduction of carrier mobility

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Numata, T.; Maeda, T.; Takagi, S.

  Ieee Transactions on Electron Devices 51 (7) 1114 - 1121 0018-9383 2004 [Refereed]
  
• SiGe-on-Insulator and Ge-on-Insulator substrates fabricated by Ge-condensation technique for high-mobility channel CMOS devices

  Tezuka, T.; Mizuno, T.; Sugiyama, N.; Nakaharai, S.; Moriyama, Y.; Usuda, K.; Numata, T.; Hirashita, N.; Maeda, T.; Takagi, S.; Miyamura, Y.; Toyoda, E.

  High-Mobility Group-Iv Materials and Devices 809 65 - 75 0272-9172 2004 [Refereed]
  
• Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

  Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shin-Ichi Takagi

  Applied Physics Letters 83 (17) 3516 - 3518 0003-6951 2003/10
• Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

  K Uchida; S Takagi

  APPLIED PHYSICS LETTERS 82 (17) 2916 - 2918 0003-6951 2003/04 [Refereed]
  
• High-performance strained-soi cmos devices using thin film sige-on-insulator technology

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Toshinori Numata; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 50 (4) 988 - 994 0018-9383 2003
• Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs

  J. Koga; S. Takagi; A. Toriumi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 49 (6) 1042 - 1048 0018-9383 2002/06 [Refereed]
  
• Dislocation-free formation of relaxed SiGe-on-insulator layers

  T. Tezuka; N. Sugiyama; S. Takagi; T. Kawakubo

  Applied Physics Letters AIP Publishing 80 (19) 3560 - 3562 0003-6951 2002/05 [Refereed]
  
• Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption

  S. Takagi

  IEICE Trans. Electron. E85-C (5) 1064 - 1072 2002/05 [Refereed][Invited]
  
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

  Takamitsu Ishihara; Kazuya Matsuzawa; Mariko Takayanagi; Shin-ichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 41 (Part 1, No. 4B) 2353 - 2358 0021-4922 2002/04 [Refereed]
  
• Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

  Shin-ichi Takagi; Mariko Takayanagi

  Japanese Journal of Applied Physics IOP Publishing 41 (Part 1, No. 4B) 2348 - 2352 0021-4922 2002/04 [Refereed]
  
• Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

  T Tezuka; N Sugiyama; S Takagi

  Materials Science and Engineering: B Elsevier BV 89 (1-3) 360 - 363 0921-5107 2002/02 [Refereed]
  
• Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

  S Takagi; N Sugiyama; T Mizuno; T Tezuka; A Kurobe

  Materials Science and Engineering: B Elsevier BV 89 (1-3) 426 - 434 0921-5107 2002/02 [Refereed]
  
• Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Shin-ichi Takagi

  Applied Physics Letters AIP Publishing 80 (4) 601 - 603 0003-6951 2002/01 [Refereed]
  
• Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures

  T. Mizuno; N. Sugiyama; T. Tezuka; S. Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 49 (1) 7 - 14 0018-9383 2002/01 [Refereed]
  
• Carrier transport properties of thin gate oxides after soft and hard breakdown

  Shin-ichi Takagi; Mariko Takayanagi

  Microelectronic Engineering Elsevier BV 59 (1-4) 5 - 15 0167-9317 2001/11 [Refereed]
  
• Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures

  T. Mizuno; N. Sugiyama; A. Kurobe; S. Takagi

  IEICE Trans. Electron. E84-C (10) 1423 - 1430 2001/10 [Refereed][Invited]
  
• Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

  Ken Uchida; Junji Koga; Ryuji Ohba; Shin-ichi Takagi; Akira Toriumi

  Journal of Applied Physics 90 (7) 3551 - 3557 0021-8979 2001/10 [Refereed]
  
• Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

  T. Tezuka; N. Sugiyama; S. Takagi

  Applied Physics Letters AIP Publishing 79 (12) 1798 - 1800 0003-6951 2001/09 [Refereed]
  
• Strained-Si-on-Insulator (Strained-SOI) MOSFETs - Concept, Structures and Device Characteristics

  S. Takagi; T. Mizuno; N. Sugiyama; T. Tezuka; A. Kurobe

  IEICE Trans. Electron. E84-C (8) 1043 - 1050 2001/08 [Refereed][Invited]
  
• Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

  T. Mizuno; N. Sugiyama; A. Kurobe; S.-i. Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 48 (8) 1612 - 1618 0018-9383 2001/08 [Refereed]
  
• Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

  Hiroshi Watanabe; Shin-ichi Takagi

  Journal of Applied Physics AIP Publishing 90 (3) 1600 - 1607 0021-8979 2001/08 [Refereed]
  
• SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

  A. Nishiyama; K. Matsuzawa; S. Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 48 (6) 1114 - 1120 0018-9383 2001/06 [Refereed]
  
• Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs

  Naoharu Sugiyama; Tomohisa Mizuno; Masamichi Suzuki; Sin-ichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 40 (4S) 2875 - 2875 0021-4922 2001/04 [Refereed]
  
• Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime

  Tetsuo Hatakeyama Tetsuo Hatakeyama; Kazuya Matsuzawa Kazuya Matsuzawa; Shin-ichi Takagi Shin-ichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 40 (4S) 2627 - 2627 0021-4922 2001/04 [Refereed]
  
• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N₂O and NO Oxynitrides

  Takamitsu Ishihara; Shin-ichi Takagi; Masaki Kondo

  Japanese Journal of Applied Physics IOP Publishing 40 (4S) 2597 - 2597 0021-4922 2001/04 [Refereed]
  
• A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

  Tsutomu Tezuka; Naoharu Sugiyama; Tomohisa Mizuno; Masamichi Suzuki; Shin-ichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 40 (4S) 2866 - 2866 0021-4922 2001/04 [Refereed]
  
• Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs

  Shin-ichi Takagi; Tsutomu Tezuka; Naoharu Sugiyama; Tomohisa Mizuno; Atsushi Kurobe

  MRS Proceedings Springer Science and Business Media LLC 686 (2) 9 - 20 0272-9172 2001/03 [Refereed]
  
• Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

  N Sugiyama; T Mizuno; S Takagi; M Koike; A Kurobe

  Thin Solid Films Elsevier BV 369 (1-2) 199 - 202 0040-6090 2000/07 [Refereed]
  
• Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs

  Tsutomu Tezuka; Atsushi Kurobe; Naoharu Sugiyama; Shin-ichi Takagi

  Thin Solid Films Elsevier BV 369 (1-2) 338 - 341 0040-6090 2000/07 [Refereed]
  
• Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

  Ken Uchida; Kazuya Matsuzawa; Junji Koga; Shin-ichi Takagi; Akira Toriumi

  Applied Physics Letters 76 (26) 3992 - 3994 0003-6951 2000/06 [Refereed]
  
• Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

  T. Mizuno; S. Takagi; N. Sugiyama; H. Satake; A. Kurobe; A. Toriumi

  IEEE Electron Device Letters Institute of Electrical and Electronics Engineers (IEEE) 21 (5) 230 - 232 0741-3106 2000/05 [Refereed]
  
• Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's

  S. Takagi; M. Takayanagi; A. Toriumi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 47 (5) 999 - 1005 0018-9383 2000/05 [Refereed]
  
• Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits

  Ken Uchida Ken Uchida; Kazuya Matsuzawa Kazuya Matsuzawa; Junji Koga Junji Koga; Ryuji Ohba Ryuji Ohba; Shin-ichi Takagi Shin-ichi Takagi; Akira Toriumi Akira Toriumi

  Japanese Journal of Applied Physics IOP Publishing 39 (4S) 2321 - 2321 0021-4922 2000/04 [Refereed]
  
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon

  Junji Koga; Celine Vanderstraeten; Shin-ichi Takagi; Akira Toriumi

  Japanese Journal of Applied Physics IOP Publishing 39 (4S) 2246 - 2246 0021-4922 2000/04 [Refereed]
  
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi₂Ta₂O₉ Films and Ultra-Thin SiN Buffer Layers

  Takeshi Yamaguchi; Masato Koyama; Akira Takashima; Shin-ichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 39 (4S) 2058 - 2058 0021-4922 2000/04 [Refereed]
  
• OPTIMIZED DESIGN OF THE SUBBAND STRUCTURE IN MOS INVERSION LAYERS FOR REALIZING HIGH PERFORMANCE AND LOW POWER Si MOSFETS

  SHIN-ICHI TAKAGI

  International Journal of High Speed Electronics and Systems World Scientific Pub Co Pte Lt 10 (01) 155 - 170 0129-1564 2000/03 [Refereed][Invited]
  
• Characterization of inversion-layer capacitance of holes in Si MOSFET's

  S. Takagi; M. Takayanagi; A. Toriumi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 46 (7) 1446 - 1450 0018-9383 1999/07 [Refereed]
  
• A new I-V model for stress-induced leakage current including inelastic tunneling

  S. Takagi; N. Yasuda; A. Toriumi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 46 (2) 348 - 354 0018-9383 1999/02 [Refereed]
  
• Experimental evidence of inelastic tunneling in stress-induced leakage current

  S. Takagi; N. Yasuda; A. Toriumi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 46 (2) 335 - 341 0018-9383 1999/02 [Refereed]
  
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance

  Khairurrijal Miyazaki; Shin-ichi Takagi; Masataka Hirose

  Japanese Journal of Applied Physics IOP Publishing 38 (1A) L30 - L32 0021-4922 1999/01 [Refereed]
  
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films

  Takagi Shin-ichi; Koga Junji; Toriumi Akira

  Jpn J Appl Phys The Japan Society of Applied Physics 37 (3) 1289 - 1294 0021-4922 1998/03 [Refereed]
  
• Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors

  S. Takagi; J.L. Hoyt; K. Rim; J.J. Welser; J.F. Gibbons

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 45 (2) 494 - 501 0018-9383 1998/02 [Refereed]
  
• Two‐dimensional Carrier Transport in Si MOSFETs

  Shin-Ichi Takagi

  VLSI Design Wiley 8 (1-4) 1 - 11 1065-514X 1998/01 [Refereed][Invited]
  
• Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films

  Naoki Yasuda; Shin-ichi Takagi; Akira Toriumi

  Applied Surface Science Elsevier BV 117-118 216 - 220 0169-4332 1997/06 [Refereed]
  
• Diffusion and Segregation of Carbon in SiO₂ Films

  Ichiro Mizushima; Eiji Kamiya; Norihisa Arai; Masahisa Sonoda; Masahiko Yoshiki; Shin-ichi Takagi; Mikio Wakamiya; Shigeru Kambayashi; Yuichi Mikata; Sei-ichi Mori Kashiwagi

  Japanese Journal of Applied Physics IOP Publishing 36 (3S) 1465 - 1465 0021-4922 1997/03 [Refereed]
  
• Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides

  Hideki Satake; Naoki Yasuda; Shin-ichi Takagi; Akira Toriumi

  Applied Physics Letters AIP Publishing 69 (8) 1128 - 1130 0003-6951 1996/08 [Refereed]
  
• Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors

  Shin-ichi Takagi; Judy L. Hoyt; Jeffrey J. Welser; James F. Gibbons

  Journal of Applied Physics AIP Publishing 80 (3) 1567 - 1577 0021-8979 1996/08 [Refereed]
  
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure

  Koga Junji; Takagi Shin-ichi; Toriumi Akira

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 35 (2) 1440 - 1444 0021-4922 1996/02 [Refereed]
  
• Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors

  Kern Rim; S. Takagi; J. J. Welser; J. L. Hoyt; J. F. Gibbons

  MRS Proceedings Springer Science and Business Media LLC 379 327 - 332 0272-9172 1995/12 [Refereed]
  
• Quantitative understanding of inversion-layer capacitance in Si MOSFET's

  S. Takagi; A. Toriumi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 42 (12) 2125 - 2130 0018-9383 1995 [Refereed]
  
• On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

  S. Takagi; A. Toriumi; M. Iwase; H. Tango

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 41 (12) 2363 - 2368 0018-9383 1994 [Refereed]
  
• On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

  S. Takagi; A. Toriumi; M. Iwase; H. Tango

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 41 (12) 2357 - 2362 0018-9383 1994 [Refereed]
  
• Observation of anisotropic impact ionization in Si MOSFET

  Shin-ichi Takagi; A Toriumi

  Semiconductor Science and Technology IOP Publishing 7 (3B) B601 - B603 0268-1242 1992/03 [Refereed]
  
• Interface Analysis of Al2O3/InP Structure Prepared by Molecular Beam Deposition

  Ohyama Hideaki; Narusawa Tadashi; Nakashima Hisao; Takagi Shin-ichi; Sugano Takuo

  Jpn J Appl Phys The Japan Society of Applied Physics 26 (10) 1615 - 1621 0021-4922 1987/10 [Refereed]
  
• Effects on InP surface trap states of i n s i t u etching and phosphorus-nitride deposition

  Yoon-Ha Jeong; Shinichi Takagi; Fusako Arai; Takuo Sugano

  Journal of Applied Physics AIP Publishing 62 (6) 2370 - 2375 0021-8979 1987/09 [Refereed]
  
• Effective mobility of electrons in surface layer of semi-insulating and p-type InP substrates

  Shinichi Takagi; Takuo Sugano

  Journal of Applied Physics AIP Publishing 62 (6) 2387 - 2391 0021-8979 1987/09 [Refereed]
  
• 真空蒸着膜を用いたInP MIS形電界効果トランジスタの試作 (3-5族半導体デバイスと集積回路<特集>)

  高木 信一; 菅野 卓雄

  電子情報通信学会論文誌 C エレクトロニクス 電子情報通信学会 70 (5) 625 - 630 0913-5723 1987/05 [Refereed]
  

Conference Activities & Talks

• Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)

  Kasidit Toprasertpong; Eishin Nako; Shin Yi Min; Zuocheng Cai; Seong Kun Cho; Rikuo Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Reliability Physics Symposium Proceedings  2024
• Inference and training in deep learning using a symmetric optical crossbar array

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2024 Optical Fiber Communications Conference and Exhibition, OFC 2024 - Proceedings  2024
• Global optimization of universal unitary photonic integrated circuits

  Rui Tang; Hanzhi Tang; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE International Conference on Group IV Photonics GFP  2024
• Reservoir computing using nonlinear polarization and charge dynamics of anti-ferroelectric HZO/Si FETs

  Shin Yi Min; Kasidit Toprasertpong; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024  2024
• A single-wavelength non-coherent photonic matrix multiplication circuit for optical neural networks

  Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  CLEO: Science and Innovations, CLEO: S and I 2024 in Proceedings CLEO 2024, Part of Conference on Lasers and Electro-Optics  2024
• Low-power Add-drop Microring Resonator Switch with Positive/negative Phase Tuning using InGaAsP/Si Hybrid MOS Phase Shifter

  Yosuke Wakita; Rui Tang; Hanzhi Tang; Shuhei Ohno; Tomohiro Akazawa; Yuto Miyatake; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings  2023
• Hafnia-based ferroelectric devices for lower power memory and AI applications

  Shinichi Takagi; Kasidit Toprasertpong; Eishin Nako; Mitsuru Takenaka; Ryosho Nakane

  7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023  2023
• HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue

  Zuocheng Cai; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2023
• Quantitative Understanding of Sub-Threshold Swing of Si MOSFETs at Cryogenic Temperatures Down to 4 K

  Shinichi Takagi; Min Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Hiroshi Oka; Takahiro Mori

  Proceedings of the IEEE Conference on Nanotechnology  2023
• Compact Low-loss S-bends Designed by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2023 Conference on Lasers and Electro-Optics, CLEO 2023  2023
• Reservoir Computing Utilizing Ferroelectric-Gate-Insulator FETs and Capacitors

  Shinichi Takagi; Kasidit Toprasertpong; Eishin Nako; Zeyu Wang; Rikuo Suzuki; Shin Yi Min; Mitsuru Takenaka; Ryosho Nakane

  Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023  2023
• Compact Low-loss S-bends Designed by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  CLEO: Science and Innovations, CLEO:S and I 2023  2023
• Scalable Programmable Photonic Integrated Circuits by III-V/Si Hybrid Integration

  Mitsuru Takenaka; Hanzhi Tang; Kouhei Watanabe; Takaya Ochiai; Tomohiro Akazawa; Masahiro Fujita; Chengli Chai; Mingzhi Huang; Yosuke Wakita; Yuto Miyatake; Shuhei Ohno; Kei Sumita; Stephane Monfray; Frederic Boeuf; Makoto Okano; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  Integrated Photonics Research, Silicon and Nanophotonics in Proceedings Advanced Photonics Congress 2023 - Part of Advanced Photonics Congress 2023  2023
• Transparent in-line optical power monitor integrated with MOS Optical Phase Shifter using InP/Si Hybrid Integration

  Tomohiro Akazawa; Kei Sumita; Stéphane Monfray; Frédéric Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings  2023
• Photonic Tensor Core with Low-insertion-loss, Non-volatile Ge2Sb2Te3S2Intensity Modulators

  Yuto Miyatake; Rui Tang; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings  2023
• Low-capacitance Ultrathin InGaAs Membrane Photodetector on Si Slot Waveguide towards Receiver-less System

  T. Akazawa; D. Wu; K. Sumita; N. Sekine; M. Okano; K. Toprasertpong; S. Takagi; M. Takenaka

  Digest of Technical Papers - Symposium on VLSI Technology  2022
• Experimental demonstration of novel scheme of HZO/Si FeFET reservoir computing with parallel data processing for speech recognition

  E. Nako; K. Toprasertpong; R. Nakane; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2022
• III-V/Si hybrid integration for scalable optical switching and computing

  Mitsuru Takenaka; Hanzhi Tang; Kouhei Watanabe; Takaya Ochiai; Tomohiro Akazawa; Yuto Miyatake; Shuhei Ohno; Kei Sumita; Stephane Monfray; Frederic Boeuf; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  OECC/PSC 2022 - 27th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing 2022  2022
• Extremely-Thin Channel FET Technology for Advanced Logic CMOS

  Shinichi Takagi; Kei Sumita; Chia Tsong Chen; Xueyang Han; Kasidit Toprasertpong; Mitsuru Takenaka

  2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022  2022
• Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating

  Taichiro Fukui; Kei Sumita; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Takuo Tanemura

  Conference Digest - IEEE International Semiconductor Laser Conference  2022
• Crossbar Wiring for III-V/Si MOS Optical Phase Shifters with Diode Selectors

  Hanzhi Tang; Rui Tang; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2022 European Conference on Optical Communication, ECOC 2022  2022
• (Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

  Shinichi Takagi; Kasidit Toprasertpong; Kent Tahara; Eishin Nako; Ryosho Nakane; Zeyu Wang; Xuan Luo; Tsung-En Lee; Mitsuru Takenaka

  ECS Meeting Abstracts  2021/10  The Electrochemical Society
  
• Energy-Efficient Reliable HZO FeFET Computation-in-Memory with Local Multiply Global Accumulate Array for Source-Follower Charge-Sharing Voltage Sensing

  Chihiro Matsui; Kasidit Toprasertpong; Shinichi Takagi; Ken Takeuchi

  IEEE Symposium on VLSI Circuits, Digest of Technical Papers  2021/06  Institute of Electrical and Electronics Engineers Inc.
  
• Monolithic Integration of III-V/Si Hybrid MOS Optical Phase Shifter and InGaAs Membrane Photodetector

  Shuhei Ohno; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2021 Optical Fiber Communications Conference and Exhibition, OFC 2021 - Proceedings  2021/06  Institute of Electrical and Electronics Engineers Inc.
  
• Thermo-optic Mach-Zehnder Interferometer Integrated with Si PN Diode Switch for Bipolar Optical Phase Control

  Hanzhi Tang; Shuhei Ohno; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2021 Optical Fiber Communications Conference and Exhibition, OFC 2021 - Proceedings  2021/06  Institute of Electrical and Electronics Engineers Inc.
  
• Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  SID Symposium Digest of Technical Papers  2021/05  Wiley
  
• Advanced CMOS technologies for ultra-low power logic and AI applications

  Shinichi Takagi; Kasidit Toprascrtpong; Kimihiko Kato; Kei Sumita; Eishin Nako; Ryosho Nakane; Kwang-Won Jo; Mitsuru Takenaka

  2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021  2021/04  Institute of Electrical and Electronics Engineers Inc.
  
• Si Microring Resonator Switch Based on III-V/Si Hybrid MOS Optical Phase Shifter Using Ultrathin InP Membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Hanzhi Tang; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020  2020/12  Institute of Electrical and Electronics Engineers Inc.
  
• Demonstration of Classification Task Using Optical Neural Network Based on Si Microring Resonator Crossbar Array

  Shuhei Ohno; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020  2020/12  Institute of Electrical and Electronics Engineers Inc.
  
• Mid-infrared Non-volatile Compact Optical Phase Shifter Based on Ge Sb Te

  Yuto Miyatake; Chong Pei Ho; Prakash Pitchappa; Ranjan Singh; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020  2020/12  Institute of Electrical and Electronics Engineers Inc.
  
• Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications

  E. Nako; K. Toprasertpong; R. Nakane; Z. Wang; Y. Miyatake; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2020/06  Institute of Electrical and Electronics Engineers Inc.
  
• Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2*1013cm-2

  K. Toprasertpong; Z. -Y. Lin; T. -E. Lee; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2020/06  Institute of Electrical and Electronics Engineers Inc.
  
• Active-Passive Integration on III-V-OI Platform using Quantum Well Intermixing

  Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS  2020/05  Institute of Electrical and Electronics Engineers Inc.
  
• Monolithic Germanium PIN Waveguide Photodetector Operating at 2 μm Wavelengths

  Ziqiang Zhao; Chongpei Ho; Qiang Li; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings  2020/03  Institute of Electrical and Electronics Engineers Inc.
  
• Low Parasitic Capacitance III-V/Si Hybrid MOS Optical Modulator toward High-speed Modulation

  Qiang Li; Chong Pei Ho; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings  2020/03
• Taper-Less III-V/Si Hybrid MOS Optical Phase Shifter using Ultrathin InP Membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings  2020/03
• Comparison of carrier trap characteristics in different interfacial layers of n-Ge MOS structures

  Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts  2020/02  The Japan Society of Applied Physics
  
• Proposal of a measurement method to discriminate different types of traps in n-Ge MOS gate nsulators

  Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts  2020/02  The Japan Society of Applied Physics
  
• Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

  Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts  2020/02  The Japan Society of Applied Physics
  
• Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

  K. Toprasertpong; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2019/12  Institute of Electrical and Electronics Engineers Inc.
  
• Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation

  K. W. Jo; C. M. Lim; W. K. Kim; K. Toprasertpong; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2019/12
• Group IV/oxide semiconductor bi-layer tunneling FET

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019  2019/10  Institute of Electrical and Electronics Engineers Inc.
  
• Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers

  Kei Sumita; Jun Takeyasu; Kimihiko Kato; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019  2019/10  Institute of Electrical and Electronics Engineers Inc.
  
• Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation

  T. E. Lee; K. Kato; M. Ke; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2019/06
• Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology

  Cheol-Min Lim; Mitsuru Takenaka; Shinichi Takagi

  2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019  2019/03  Institute of Electrical and Electronics Engineers Inc.
  
• Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  2019 Electron Devices Technology and Manufacturing Conference (EDTM)  2019/03  IEEE
  
• Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces

  M. Ke; P. Cheng; K. Kato; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2019/01
• Efficient germanium variable optical attenuator at 1.95μm wavelength using spin-on-glass doping

  Ziqiang Zhao; Chong Pei Ho; S. Takagi; M. Takenaka

  45th European Conference on Optical Communication (ECOC 2019)  2019  Institution of Engineering and Technology
  
• Si Racetrack Modulator with III-V/Si Hybrid MOS Optical Phase Shifter

  Qiang Li; ChongPei Ho; S. Takagi; M. Takenaka

  45th European Conference on Optical Communication (ECOC 2019)  2019  Institution of Engineering and Technology
  
• Coupled-resonator-induced-transparency on germanium-on-insulator mid-infrared platform

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019)  2019
• Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion

  Qiang Li; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2019
• Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter

  Qiang Li; Jae-Hoon Han; Tsung-En Lee; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW)  2019
• Numerical Analysis of III-V/Si Hybrid MOS Microdisk Modulator

  Shuhei Ohno; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW)  2019
• Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator

  Naoki Sekine; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW)  2019
• Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method

  Kei Sumita; Jun Takeyasu; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW)  2019
• Advanced MOS Device Technology for Low Power Logic LSI

  Shinichi Takagi; Kimihiko Kato; Kei Sumita; Kwangwon Jo; Cheol-Min Lim; Ryotaro Takaguchi; Dae-Hwan Ahn; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka

  PROCEEDINGS OF THE 2019 26TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2019)  2019
• Low-Power Ge Thermo-Optic Phase Shifter on Ge-on-Insulator Platform

  Takumi Fujigaki; Shinichi Takagi; Mitsuru Takenaka

  European Conference on Optical Communication, ECOC  2018/11  Institute of Electrical and Electronics Engineers Inc.
  
• III-V/Si Hybrid MOS Optical Phase Modulator for Si Photonic Integrated Circuits

  Mitsuru Takenaka; Jaehoon Han; Frederic Boeuf; Jinkwon Park; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  European Conference on Optical Communication, ECOC  2018/11
• Prospects and Challenges for Ge MOSFETs

  Takagi Shinichi; Jo Kwang-Won; Kim Wu-Kang; Ke Mengnan; Kato Kimihiko; Takenaka Mitsuru

  JSAP Annual Meetings Extended Abstracts  2018/03  The Japan Society of Applied Physics
  
• Electrical characteristics of p-channel GOI tunneling FETs fabricated on p-type GOI

  Takaguchi Ryotaro; Kato Kimihiko; Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts  2018/03  The Japan Society of Applied Physics
  
• Physical origins of slow traps for ALD high-k dielectrics on GeO_x/Ge interfaces

  Ke Mengnan; Kato Kimihiko; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts  2018/03  The Japan Society of Applied Physics
  
• MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI.

  Shinichi Takagi; Array; Wu-Kang Kim; Kwangwon Jo; Ryo Matsumura; Ryotaro Takaguchi; Dae-Hwan Ahn,Array; Mitsuru Takenaka

  48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018  2018  IEEE
  
• Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation

  Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018)  2018
• Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter

  Qiang Li; Jae-Hoon Han; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)  2018
• High-efficiency, Low-loss Optical Phase Modulator based on III-V/Si Hybrid MOS Capacitor

  Mitsuru Takenaka; Jae-Hoon Han; Jin-Kwon Park; Frederic Boeuf; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)  2018
• Si Hybrid MOS Optical Phase Shifter for Switching and Computing

  Mitsuru Takenaka; Jaehoon Han; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Shinichi Takagi

  2018 PHOTONICS IN SWITCHING AND COMPUTING (PSC)  2018
• High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control

  W. K. Kim; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2017/07  Institute of Electrical and Electronics Engineers Inc.
  
• III-V-based low power CMOS devices on Si platform

  S. Takagi; D. H. Ahn; T. Gotow; M. Noguchi; K. Nishi; S. H. Kim; M. Yokoyama; C. Y. Chang; S. H. Yoon; C. Yokoyama; M. Takenaka

  2017 IEEE International Conference on IC Design and Technology, ICICDT 2017  2017/07  Institute of Electrical and Electronics Engineers Inc.
  
• In content dependence of pre-treatment effects on Al2O3/InxGa1-xAs MOS interface properties

  C. Yokoyama; C. Y. Chang; M. Takenaka; S. Takagi

  2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings  2017/06  Institute of Electrical and Electronics Engineers Inc.
  
• Tunneling MOSFET technologies using III-V/Ge materials

  S. Takagi; D. H. Ahn; M. Noguchi; T. Gotow; K. Nishi; M. Kim; M. Takenaka

  Technical Digest - International Electron Devices Meeting, IEDM  2017/01  Institute of Electrical and Electronics Engineers Inc.
  
• Optimization of modulation efficiency of InGaAsP/Si hybrid MOS optical modulator

  Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  Optics InfoBase Conference Papers  2017  OSA - The Optical Society
  
• Effects of Ge-source impurity concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs

  Tae-Eon Bae; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2017 FIFTH BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS & STEEP TRANSISTORS WORKSHOP (E3S)  2017
• High-Efficiency O-Band Mach-Zehnder Modulator based on InGaAsP/Si Hybrid MOS Capacitor

  Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2017
• Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)  2017
• Monolithic Integration of InGaAsP MZI Modulator and InGaAs Driver MOSFET using III-V CMOS Photonics

  Jin-Kwon Park; Shinichi Takagi; Mitsuru Takenaka

  2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2017
• III-V/Ge MOSFETs and TFETs for Ultra-Low Power Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)  2017
• Ultra-low power MOSFET and Tunneling FET technologies using III-V and Ge

  Shinichi Takagi; Mitsuru Takenaka

  2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS)  2017
• Near-infrared and mid-infrared integrated photonics based on Ge-on-insulator platform

  Mitsuru Takenaka; Jian Kang; Shinichi Takagi

  30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC)  2017
• Impact of La2O3/InGaAs MOS Interface on InGaAs MOSFET Performance and its Application to InGaAs Negative Capacitance FET

  C. -Y. Chang; K. Endo; K. Kato; C. Yokoyama; M. Takenaka; S. Takagi

  2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2016
• Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al2O3/p-Si MOS capacitor formed by wafer bonding

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP)  2016
• Design and Characterization of Ge Passive Waveguide Components on Ge-on-Insulator for Mid-Infrared Photonics

  Jian Kang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2016
• III-V MOS device technologies for advanced CMOS and tunneling FET

  Shinichi Takagi; Mitsuru Takenaka

  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)  2016
• Heterogeneous integration of SiGe/Ge and III-V for Si photonics

  Mitsuru Takenaka; Younghyun Kim; Jaehoon Han; Jian Kang; Yuki Ikku; Yongpeng Cheng; Jinkwon Park; Shinichi Takagi

  SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS V  2016
• Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)  2016
• Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform

  Mitsuru Takenaka; Shinichi Takagi

  2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)  2016
• Improvement in the modulation bandwidth of MOS optical modulators by using p-SiGe slab

  Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  Asia Communications and Photonics Conference, ACPC 2015  2015/12  Optical Society of America (OSA)
  
• High I<inf>on</inf>/I<inf>off</inf> Ge-source ultrathin body strained-SOI tunnel FETs - Impact of channel strain, MOS interfaces and back gate on the electrical properties

  Minsoo Kim; Yuki Wakabayashi; Ryosho Nakane; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2015/02  Institute of Electrical and Electronics Engineers Inc.
  
• CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si

  M. Takenaka; Y. Kim; J. Han; J. Kang; Y. Ikku; Y. Cheng; J. K. Park; S. H. Kim; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2015/02  Institute of Electrical and Electronics Engineers Inc.
  
• High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

  K. Nishi; M. Yokoyama; H. Yokoyama; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY)  2015
• Impact of GeOx passivation on Dark Current for Wafer-bonded Ge-on-Insulator Metal-Semiconductor-Metal Photodetector

  Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP)  2015
• SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2015
• Ge/III-V MOS Device Technologies for Low Power Integrated Systems

  Shinichi Takagi; Mitsuru Takenaka

  ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE  2015
• Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)  2015
• III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications

  Shinichi Takagi; Mitsuru Takenaka

  2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)  2015
• Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut (TM) GeOI substrates

  Xiao Yu; Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS)  2015
• Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm

  Xiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2015
• Low-resistance lateral junction formation for laser diodes on III-V CMOS photonics platform

  Y. Ikku; M. Takenaka; S. Takagi

  Conference Digest - IEEE International Semiconductor Laser Conference  2014/12  Institute of Electrical and Electronics Engineers Inc.
  
• High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si

  S. H. Kim; Y. Ikku; M. Yokoyama; R. Nakane; J. Li; Y. C. Kao; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2014/09  Institute of Electrical and Electronics Engineers Inc.
  
• III-V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si

  M. Yokoyama; H. Yokoyama; M. Takenaka; S. Takagi

  2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers  2014
• The effects of biaxially-tensile strain to properties of Si/SiO2 interface states generated by electrical stress

  W. L. Cai; M. Takenaka; S. Takagi

  IEEE International Reliability Physics Symposium Proceedings  2014  Institute of Electrical and Electronics Engineers Inc.
  
• Waveguide InGaAs photodetector with Schottky barrier enhancement layer on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2014
• Surface Orientation Depdendence of Electro-optic Effects in InGaAsP for Lateral PIN-junction InGaAsP Photonic-wire Modulators

  Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2014
• Ultra-small, Low-crosstalk, Electrically-driven InGaAsP Photonic-wire Optical Switches on III-V CMOS Photonics Platform

  Yuki Ikku; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2014
• High I-on/I-off Ge-source ultrathin body strained-SOI Tunnel FETs

  Minsoo Kim; Yuki Wakabayashi; Ryosho Nakane; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2014
• Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP)  2014
• Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)  2014
• Multi-bandgap III-V on Insulator Wafer fabricated by Quantum Well Intermixing for III-V CMOS Photonics Platform

  Misa Kuramochi; Mitsuru Takenaka; Yuki Ikku; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2014
• Thin body GaSb-OI p-MOSFETs on Si wafers fabricated by direct wafer bonding

  Koichi Nishi; Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2014
• III-V/Ge CMOS Device Technologies for Future Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM)  2014
• Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates

  Xiao Yu; Rui Zhang; Jian Kang; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)  2014
• Low-crosstalk 2 2 InGaAsP Photonic-wire Optical Switches using III-V CMOS Photonics Platform

  Y. Ikku; M. Hata; M. Noguchi; T. Osada; S. Takagi; M. Takenaka; M. Yokoyama; O. Ichikawa

  39th European Conference and Exhibition on Optical Communication (ECOC 2013)  2013  Institution of Engineering and Technology
  
• Ultra-thin body MOS device technologies using high mobility channel materials

  S. Takagi; S. H. Kim; M. Yokoyama; W. K. Kim; R. Zhang; M. Takenaka

  2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013  2013  IEEE Computer Society
  
• High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability

  Sang Hyeon Kim; M. Yokoyama; R. Nakane; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2013
• Low temperature surface passivation for carrier injection type SiGe optical modulator

  Younghyun Kim; Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP  2013
• Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation

  Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP  2013
• Evaluation of chemical potential for graphene optical modulators based on the semiconductor-metal transition

  T. Kayoda; J. H. Han; M. Takenaka; S. Takagi

  IEEE International Conference on Group IV Photonics GFP  2013
• Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

  S. H. Kim; M. Yokoyama; R. Nakane; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials  2013
• Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs

  SangHyeon Kim; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenakal; Shinichi Takagi

  2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)  2013
• High I-on/I-off and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions

  Munetaka Noguchi; SangHyeon Kim; Masafumi Yokoyama; SangMin Ji; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2013
• MOS interface engineering for high-mobility Ge CMOS

  Mitsuru Takenaka; Rui Zhang; Shinichi Takagi

  2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)  2013
• Sulfur cleaning for (100) (111)A and (111)B InGaAs surfaces with in content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

  Masafumi Yokoyama; Noriyuki Taoka; Rena Suzuki; Osamu Ichikawa; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2013
• Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Yuji Asakura; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2013
• Sub-60 nm deeply-scaled channel length extremely-thin body In xGa 1-xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

  S. H. Kim; M. Yokoyama; N. Taoka; R. Nakane; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2012
• MOS interface and channel engineering for high-mobility Ge/III-V CMOS

  S. Takagi; R. Zhang; S. H. Kim; N. Taoka; M. Yokoyama; J. K. Suh; R. Suzuki; M. Takenaka

  Technical Digest - International Electron Devices Meeting, IEDM  2012
• Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators

  J. H. Han; R. Zhang; T. Osada; M. Hata; M. Takenaka; S. Takagi

  IEEE International Conference on Group IV Photonics GFP  2012
• Numerical analysis of strained SiGe-based carrier-injection optical modulators

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP  2012
• High mobility CMOS technologies using III-V/Ge channels on Si platform

  Shinichi Takagi; Mitsuru Takenaka

  2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012  2012
• Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES  2012
• Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High N-s Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi

  2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2012
• Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering

  S. H. Kim; M. Yokoyama; N. Taoka; R. Nakane; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2011
• III-V on silicon for high-speed electronics and CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials  2011
• Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs

  Maeda T; Urabe Y; Itatani T; Ishii H; Miyata N; Yasuda T; Yamada H; Hata M; Yokoyama M; Takenaka M; Takagi S

  Digest of Technical Papers - Symposium on VLSI Technology  2011
• Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys

  Kim S.H; Yokoyama M; Taoka N; Iida R; Lee S; Nakane R; Urabe Y; Miyata N; Yasuda T; Yamada H; Fukuhara N; Hata M; Takenaka M; Takagi S

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials  2011
• High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

  Kim S.H; Yokoyama M; Taoka N; Iida R; Lee S; Nakane R; Urabe Y; Miyata N; Yasuda T; Yamada H; Fukuhara N; Hata M; Takenaka M; Takagi S

  Digest of Technical Papers - Symposium on VLSI Technology  2011
• Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  Device Research Conference - Conference Digest, DRC  2011
• High mobility material channel CMOS technologies based on heterogeneous integration

  Shinichi Takagi; Mitsuru Takenaka

  Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011  2011
• Advanced CMOS technologies using III-V/Ge channels

  Shinichi Takagi; Mitsuru Takenaka

  International Symposium on VLSI Technology, Systems, and Applications, Proceedings  2011
• Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation

  N. Taoka; M. Yokoyama; S. H. Kim; R. Suzuki; R. Iida; S. Lee; T. Hoshii; W. Jevasuwan; T. Maeda; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2011
• CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

  M. Yokoyama; S. H. Kim; R. Zhang; N. Taoka; Y. Urabe; T. Maeda; H. Takagi; T. Yasuda; H. Yamada; O. Ichikawa; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2011
• ALD Al 2O 3 activated direct wafer bonding for 111-V CMOS photonics platform

  Y. Ikku; M. Yokoyama; R. Iida; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials  2011
• Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction

  M. Takenaka; K. Morii; M. Sugiyama; Y. Nakano; S. Takagi

  IEEE International Conference on Group IV Photonics GFP  2011
• Fabrication of Ge-rich SiGe-On-Insulator Waveguide for Optical Modulator

  Younghyun Kim; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  2011 IEEE PHOTONICS CONFERENCE (PHO)  2011
• 37th IEEE International SOI Conference Tempe Mission Palms Hotel and Conference Center, Tempe, Arizona, USA, 3-6 October, 2011 (III-V/Ge)-On-Insulator CMOS Technology

  Shinichi Takagi

  2011 IEEE INTERNATIONAL SOI CONFERENCE  2011
• 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

  Rui Zhang; Noriyuki Taoka; Po-Chin Huang; Mitsuru Takenaka; Shinichi Takagi

  2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)  2011
• Origins for electron mobility improvement in InGaAs MISFETs with (NH4)2S treatment

  Urabe Y; Miyata N; Yasuda T; Ishii H; Itatani T; Yamada H; Fukuhara N; Hata M; Yokoyama M; Takenaka M; Takagi S

  Materials Research Society Symposium Proceedings  2010
• 微小領域選択MOVPEを用いたSi上InGaAsの形状均一化に向けたSi表面状態とInAs成長の関係

  出浦 桃子; 近藤 佳幸; 竹中 充; 高木 信一; 霜垣 幸浩; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集  2010  公益社団法人 化学工学会
  
• 成長領域狭窄化選択MOVPEによるSi上InGaAsの高横/縦比成長

  近藤 佳幸; 出浦 桃子; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集  2010  公益社団法人 化学工学会
  
• Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy

  S. H. Kim; M. Yokoyama; N. Taoka; R. Iida; S. Lee; R. Nakane; Y. Urabe; N. Miyata; T. Yasuda; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST  2010
• Self-aligned metal Source/Drain InxGa1-xas n-MOSFETs using Ni-InGaAs alloy

  S. H. Kim; M. Yokoyama; N. Taoka; R. Iida; S. Lee; R. Nakane; Y. Urabe; N. Miyata; T. Yasuda; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2010
• Advanced non-Si channel CMOS technologies on Si platform

  Shinichi Takagi; Mitsuru Takenaka

  ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings  2010
• Relationships between interface structures and electrical properties in the high-κ/III-V system

  Tetsuji Yasuda; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Taro Itatani; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Akihiro Ohtake; Masafumi Yokoyama; Takuya Hoshii; Takashi Haimoto; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  Materials Research Society Symposium Proceedings  2010
• High mobility III-V-on-insulator MOSFETs on Si with ALD-Al 2O3 BOX layers

  M. Yokoyama; Y. Urabe; T. Yasuda; H. Takagi; H. Ishii; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2010
• Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding

  M. Yokoyama; R. Iida; S. H. Kim; N. Taoka; Y. Urabe; T. Yasuda; H. Takagi; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2010
• Impact of Ge nitride interfacial layers on performance of Metal Gate/High-k Ge-nMISFETs

  Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS  2010
• Ultrasmall Arrayed Waveguide Grating Multiplexer using InP-based Photonic Wire Waveguide on Si wafer for III-V CMOS photonics

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC  2010
• Correlation between Channel Mobility Improvements and Negative V-th Shifts in III-V MISFETs: Dipole Fluctuation as New Scattering Mechanism

  Yuji Urabe; Noriyuki Miyata; Hiroyuki Ishii; Taro Itatani; Tatsuro Maeda; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST  2010
• III-V-SEMICONDUCTOR-ON-INSULATOR MISFETs ON Si WITH BURIED SiO2 AND Al2O3 LAYERs BY DIRECT WAFER BONDING

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Yuji Urabe; Hiroyuki Ishii; Noriyuki Miyata; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)  2010
• Evidence of Correlation between Surface Roughness and Interface States Generation in Unstrained and Strained-Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS  2010
• Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上

  出浦 桃子; 星井 拓也; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集  2009  公益社団法人 化学工学会
  
• MOVPE微小領域選択成長におけるSi上InAs核発生の成長条件依存性

  近藤 佳幸; 出浦 桃子; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集  2009  公益社団法人 化学工学会
  
• 微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

  出浦 桃子; 近藤 佳幸; 星井 拓也; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集  2009  公益社団法人 化学工学会
  
• Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe

  M. Deura; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials  2009
• High mobility metal S/D III-V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding

  M. Yokoyama; T. Yasuda; H. Takagi; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2009
• High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping

  Kiyohito Morii; Takashi Iwasaki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING  2009
• High Mobility Channel CMOS Technologies for Realizing High Performance LSI's

  Shinichi Takagi

  PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE  2009
• SOURCE/DRAIN FORMATION BY USING EPITAXIAL REGROWTH OF N plus InP FOR III-V NMOSFETS

  Mitsuru Takenaka; Koji Takeda; Takuya Hoshii; Takuo Tanemura; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)  2009
• Devices structures and carrier transport properties of advanced CMOS using high mobility channels

  Shinichi Takagi; Tsutomu Tezuka; Toshifumi Irisawa; Shu Nakaharai; Toshinori Numata; Koji Usuda; Naoharu Sugiyama; Masato Shichijo; Ryosho Nakane; Satoshi Sugahara

  Electronic Device Architectures for the Nano-CMOS Era: From Ultimate CMOS Scaling to Beyond CMOS Devices  2008/10
• Effects of gate current stress on electrical characteristics

  Masatomi Harada; Noriyuki Taoka; Toyoji Yamamoto; Yoshimi Yamashita; Osamu Kiso; Naoharu Sugiyama; Shin-ichi Takagi

  ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON  2008
• Ge photodetector integrated with ge-on-insulator MOSFET by using oxidation condensation technique

  M. Takenaka; S. Tanabe; S. Dissanayake; S. Sugahara; S. Takagi

  Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS  2008
• 微小領域選択成長によるSi上III/V化合物半導体層の形成

  出浦 桃子; 星井 拓也; 杉山 正和; 中根 了昌; 菅原 聡; 竹中 充; 高木 信一; 中野 義昭

  化学工学会 研究発表講演要旨集  2008  公益社団法人 化学工学会
  
• Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD)

  K. Usuda; S. Nakaharai; T. Irisawa; Y. Moriyama; N. Hirashita; T. Tezuka; Y. Yamashita; N. Taoka; O. Kiso; T. Yamamoto; N. Sugiyama; S. Takagi

  IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008  2008
• Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO(2) Interfacial Layers

  Yosuke Nakakita; Ryosho Nakane; Takashi Sasada; Hiroshi Matsubara; Mitsuru Takenaka; Shinichi Takagi

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST  2008
• Advanced nano CMOS platform using carrier-transport-enhanced channels

  Shinichi Takagi

  2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM  2008
• Understanding and Engineering of Carrier Transport in Advanced MOS Channels

  Shinichi Takagi

  SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES  2008
• Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST  2008
• High performance 60 nm gate length germanium p-MOSFETs with Ni germanide metal source/drain

  Toyoji Yamamoto; Yoshimi Yamashita; Masatomi Harada; Noriyuki Taoka; Keiji Ikeda; Kunihiro Suzuki; Osamu Kiso; Naoharu Sugiyama; Shin-ichi Takagi

  2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2  2007
• Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices

  S. Dissanayake; S. Sugahara; M. Takenaka; S. Takagi

  ICIIS 2007 - 2nd International Conference on Industrial and Information Systems 2007, Conference Proceedings  2007
• Observation of mobility enhancement in strained Si and sige tri-gate MOSFETs with multi-nanowire channels trimmed by hydrogen thermal etching

  T. Tezuka; E. Toyoda; S. Nakaharai; T. Irisawa; N. Hirashita; Y. Moriyama; N. Sugiyama; N. Taoka; Y. Yamashita; O. Kiso; M. Harada; T. Yamamoto; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2007
• Examination of additive mobility enhancements for uniaxial stress combined with biaxially strained Si, biaxially strained SiGe and Ge channel MOSFETs

  O. Weber; T. Irisawa; T. Numata; M. Harada; N. Taoka; Y. Yamashita; T. Yamamoto; N. Sugiyama; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2007
• Physical understanding of strain effects on gate oxide reliability of MOSFETs

  T. Irisawa; T. Numata; E. Toyoda; N. Hirashita; T. Tezuka; N. Sugiyama; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2007
• Carrier-transport-enhanced CMOS using new channel materials and structures

  Shinichi Takagi; Toshifiumi Irisawa; Tsutomu Tezuka; Shu Nakaharai; Koji Usuda; Norio Hirashita; Mitsuru Takenaka; Naoharu Sugiyama

  2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2  2007
• Electron transport properties of ultrathin-body and tri-gate SOI nMOSFETs with biaxial and uniaxial strain

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Naoharu Sugiyama; Shin-Ichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2006
• Relationship between hole mobility and current drive enhancement in uniaxially strained thin-body SiGe-on-Insulator pMOSFETs

  Tsutomu Tezuka; Toshifumi Irisawa; Toshinori Numata; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Koji Usuda; Naoharu Sugiyama; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2006
• Strain relaxation in strained-Si layer on SiGe-on-insulator substrate

  Norio Hirashita; Yoshihiko Moriyama; Eiji Toyoda; Naoharu Sugiyama; Shin-Ichi Takagi

  Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest  2006  IEEE Computer Society
  
• Generation of crystal defects in Ge-on-Insulator (GOI) layers in Ge-condensation process

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest  2006
• Novel anisotropie strain engineering on (110)-surface SOI CMOS devices using combination of local/global strain techniques

  T. Mizuno; T. Irisawa; N. Hirashita; Y. Moriyama; T. Numata; T. Tezuka; N. Sugiyama; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2006
• Strained-SOI technology for high-speed CMOS operation

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  International Symposium on VLSI Technology, Systems, and Applications, Proceedings  2006
• Mobility-enhanced CMOS technologies using strained Si/SiGe/Ge channels

  S. Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Numata; K. Usuda; T. Maeda; N. Sugiyama

  2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06  2006
• High performance CMOS device technologies in nano CMOS era

  Shinichi Takagi

  IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS  2006
• High performance multi-gate pMOSFETs using uniaxially-strained SGOI channels

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Shu Nakaharai; Norio Hirashita; Naoharu Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM  2005
• High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Norio Hirashita; Naonaru Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2005
• A new strained-SOI/GOI dual CMOS technology based on local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Naoharu Sugiyama; Tomohisa Mizuno; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2005
• Selectively-formed high mobility SiGe-on-insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2004  Institute of Electrical and Electronics Engineers Inc.
  
• Effect of growth temperature on lattice relaxation during SiGe growth on Si substrate

  Y. Moriyama; N. Sugiyama; N. Hirashita; S. Nakaharai; S. Takagi

  Proceedings - Electrochemical Society  2004
• Device characterizations and physical models of strained-Si channel CMOS

  Takagi, S.; Maeda, T.; Numata, I.; Mizuno, T.; Usuda, K.; Tanabe, A.; Tezuka, T.; Nakaharai, S.; Koga, J.; Irisawa, T.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; ieee,

  ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES  2004
• High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2004
• Formation mechanism of Ge-on-Insulator layers by Ge-condensation technique

  S. Nakaharai; T. Tezuka; N. Sugiyama; S. Takagi

  Proceedings - Electrochemical Society  2004
• Strained-Si/SiGe-On-Insulator CMOS technology as a platform of device performance boosters

  S. Takagi; T. Mizuno; T. Tezuka; N. Sugiyama; T. Numata; K. Usuda; Y. Moriyama; S. Nakaharai; J. Koga; A. Tanabe; N. Hirashita; T. Irisawa; T. Maeda

  Proceedings - Electrochemical Society  2004
• Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

  N. Hirashita; T. Numata; T. Tezuka; N. Sugiyama; K. Usuda; T. Irisawa; A. Tanabe; Y. Moriyama; S. Nakaharai; S. Takagi; E. Toyoda; Y. Miyamura

  Proceedings - IEEE International SOI Conference  2004
• Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

  Koji Usuda; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Materials Research Society Symposium - Proceedings  2003
• Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and delta T-SOI-induced scattering

  K Uchida; J Koga; S Takagi

  2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST  2003
• Formation of Strained Si / SiGe on Insulator Structure with a (110) Surface

  N. Sugiyama; T. Mizuno; Y. Moriyama; S. Nakaharai; T. Tezuka; S. Takagi

  IEEE International SOI Conference  2003
• Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

  K Uchida; H Watanabe; J Koga; A Kinoshita; S Takagi

  2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES  2003
• Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD)

  Koji Usuda; T. Numata; T. Tezuka; N. Sugiyama; Y. Moriyama; S. Nakaharai; S. Takagi

  IEEE International SOI Conference  2003
• (110)-Surface Strained-SOI CMOS Devices with Higher Carrier Mobility

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology  2003
• Physical Mechanism for High Hole Mobility in (110)-Surface Strained- and Unstrained-MOSFETs

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Technical Digest - International Electron Devices Meeting  2003
• Channel Structure Design, Fabrication and Carrier Transport Properties of Strained-Si/SiGe-On-Insulator (Strained-SOI) MOSFETs

  S. Takagi; T. Mizuno; T. Tezuka; N. Sugiyama; T. Numata; K. Usuda; Y. Moriyama; S. Nakaharai; J. Koga; A. Tanabe; N. Hirashita; T. Maeda

  Technical Digest - International Electron Devices Meeting  2003
• Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

  K Uchida; H Watanabe; A Kinoshita; J Koga; T Numata; S Takagi

  INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST  2002
• Device design for subthreshold slope and threshold voltage control in sub-100 nm fully-depleted SOI MOSFETs

  T Numata; K Uchida; J Koga; S Takagi

  2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS  2002
• Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

  Ken Uchida; Junji Koga; Ryuji Ohba; Toshinori Numata; Shin-ichi Takagi

  Technical Digest - International Electron Devices Meeting  2001
• High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology

  Mizuno T; Takagi S; Sugiyama N; Koga J; Tezuka T; Usuda K; Hatakeyama T; Kurobe A; Toriumi A

  Technical Digest - International Electron Devices Meeting  1999
• Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

  K. Uchida; J. Koga; R. Ohba; S. Takagi; A. Toriumi

  Annual Device Research Conference Digest  1999  IEEE
  

MISC

• Ultrathin-Body Ge-on-Insulator Mosfet and TFET Technologies

  Takagi Shinichi; Kim Wu-Kang; Jo Kwang-Won; Matsumura Ryo; Takaguchi Ryotaro; Katoh Takumi; Bae Tae-Eon; Kato Kimihiko; Takenaka Mitsuru  Meeting Abstracts  86-  (31)  1042  -86  2018  [Refereed]
  
• Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment

  Kato Kimihiko; Matsui Hiroaki; Tabata Hitoshi; Mitsuru Takenaka; Shinichi Takagi  Procedding of the 2017 IEEE International Electron Devices Meeting (IEDM)  15.6.1  -15.6.4  2018/01  [Refereed]
  
• III-V/Ge-based tunneling MOSFET

  Takagi S; Ahn D-H; Gotow T; Nishi K; Bae T-E; Katoh T; Matsumura R; Takaguchi R; Kato K; Takenaka M  Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), 2017 Fifth Berkeley Symposium on  1  2017  [Refereed]
  
• Ge MOS Device Technologies for Ultra Low Power LSIs

  高木 信一; 玉 虓; 張 睿; 柯 夢南; 竹中 充  半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology  80-  53  -56  2016/08
• CI-4-3 InGaAs Planer-type Tunneling MOSFETs with Zn-diffused source regions

  Takagi Shinichi; Noguchi Munetaka; Takenaka Mitsuru  Proceedings of the IEICE General Conference  2015-  (2)  "SS  -92"-"SS-93"  2015/02
• Invited : High I[on]/I[off] Ge-source Ultrathin Body Strained-SOI Tunnel FETs : Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties

  KIM Minsoo; WAKABAYASHI Yuki K.; NAKANE Ryosho; YOKOYAMA Masafumi; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. SDM  114-  (421)  9  -12  2015/01
• Thermal Resistance Improvement and Low-resistance Lateral PIN Junction Formation Technique on III-V-OI Wafers

  IKKU Yuki; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. OPE  114-  (377)  37  -40  2014/12
• Thermal Resistance Improvement and Low-resistance Lateral PIN Junction Formation Technique on III-V-OI Wafers

  IKKU Yuki; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. LQE  114-  (378)  37  -40  2014/12
• New materials for post-Si computing: Ge and GeSn devices

  Suyog Gupta; Xiao Gong; Rui Zhang; Yee-Chia Yeo; Shinichi Takagi; Krishna C. Saraswat  MRS BULLETIN  39-  (8)  678  -686  2014/08
• Small, low-crosstalk optical switches using III-V CMOS photonics platform

  IKKU Yuki; YOKOYAMA Masafumi; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. LQE  114-  (98)  39  -42  2014/06
• Platform Technology for Electric-Photonic Integrated Circuits by III-V CMOS Photonics

  TAKENAKA Mitsuru; IKKU Yuki; CHEN Yongpeng; KIM Sang-Hyeon; TAKAGI Shinichi  The transactions of the Institute of Electronics, Information and Communication Engineers. C  97-  (3)  95  -103  2014/03
• High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability

  Kim S. H.; Nakane R.; Ichikawa O.; Osada T.; Hata M.; Takenaka M.; Takagi S.  Technical report of IEICE. SDM  113-  (420)  39  -42  2014/01
• 招待講演 Ⅲ-Ⅴ/Ge CMOSフォトニクス実現に向けたデバイス技術

  竹中 充; 高木 信一  半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology  77-  19  -22  2013/07
• Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

  CHANG Chih-yu; YOKOYAMA Masafumi; KIM Sang-hyeon; ICHIKAWA Osamu; OSADA Takenori; HATA Masahiko; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. SDM  113-  (87)  33  -37  2013/06
• III-V/Ge device technologies for electronic-photonic integrated circuits on the Si platform

  TAKENAKA Mitsuru; TAKAGI Shinichi  應用物理  82-  (4)  309  -312  2013/04
• C-3-52 InGaAsP Photonic-wire Optical Switches using fil-V CMOS Photonics Platform

  Ikku Yuki; Yokoyama Masafumi; Ichikawa Osamu; Hata Masahiko; Takenakai Mitsuru; Takagi Shinichi  Proceedings of the IEICE General Conference  2013-  (1)  212  -212  2013/03
• C-3-16 III-V CMOS Photonics Platform toward Optical Interconnection

  Takenaka Mitsuru; Ikku Yuki; Kim Sang-Hyeon; Yokoyama Masafumi; Takagi Shinichi  Proceedings of the IEICE General Conference  2013-  (1)  176  -176  2013/03
• InGaAs MOS Gate Stack Formation and the MOS Interface Properties

  TAKAGI Shinichi; TAOKA Noriyuki; SUZUKI Rena; YOKOYAMA Masafumi; KIM Sang-Hyeon; TAKENAKA Mitsuru  表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan  33-  (11)  628  -633  2012/11
• Recent Trend of High Mobility Channel MOS Transistor Technologies

  TAKAGI Shinichi; TAKENAKA Mitsuru  The Journal of the Institute of Electronics, Information, and Communication Engineers  95-  (11)  969  -973  2012/11
• C-4-18 III-V CMOS Photonics Platform for High-performance Electronic-Photonic Integrated Circuit

  Takenaka Mitsuru; Ikku Yuki; Kim Sang-Hyeon; Yokoyama Masafumi; Takagi Shinichi  Proceedings of the Society Conference of IEICE  2012-  (1)  228  -228  2012/08
• Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering

  Kim S.H.; Yokoyama M.; Taoka N.; Nakane R.; Yasuda T.; Yamada H.; Fukuhara N.; Hata M.; Takenaka M.; Takagi S.  Technical report of IEICE. SDM  111-  (422)  17  -20  2012/02
• Present Status and Future Prospect on ULSIs and Related Semiconductor Materials

  泰 雅彦; 高木 信一; 竹中 充  住友化学 : 技術誌  2011-  (2)  37  -53  2011/11
• Self-aligned metal Source/Drain In_xGa_<1-x>As n-MOSFETs using Ni-InGaAs alloy

  KIM S. H.; YOKOYAMA M.; TAOKA N.; IIDA R.; LEE S.; NAKANE R.; URABE Y.; MIYATA N.; YASUDA T.; YAMADA H.; FUKUHARA N.; HATA M.; TAKENAKA M.; TAKAGI S.  IEICE technical report  110-  (406)  1  -4  2011/01
• New Channel Material CMOS on Si Platform

  TAKAGI Shinichi; TAKENAKA Mitsuru  The Journal of the Institute of Electronics, Information and Communication Engineers  93-  (11)  904  -908  2010/11
• III-V CMOS platform technologies for high-performance electric-photonic integrated circuits

  TAKENAKA Mitsuru; YOKOYAMA Masafumi; SUGIYAMA Masakazu; NAKANO Yoshiaki; TAKAGI Shinichi  IEICE technical report  110-  (179)  45  -48  2010/08
• III-V/Ge CMOS technologies and heterogeneous integrations on Si platform

  TAKAGI Shinichi; TAKENAKA Mitsuru  IEICE technical report  110-  (109)  119  -124  2010/06
• Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces

  YASUDA Tetsuji; MIYATA Noriyuki; URABE Yuji; ISHII Hiroyuki; ITATANI Taro; MAEDA Tatsuro; YAMADA Hisashi; FUKUHARA Noboru; HATA Masahiko; OHTAKE Akihiro; HOSHII Takuya; YOKOYAMA Masafumi; TAKENAKA Mitsuru; TAKAGI Shinichi  IEICE technical report  110-  (90)  49  -54  2010/06
• CT-2-2 III-V MOS Transistors on Si substrates

  Takagi Shinichi; Sugiyama Masakazu; Takenaka Mitsuru  Proceedings of the IEICE General Conference  2010-  (2)  "SS  -41"-"SS-42"  2010/03
• Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained- and Strained-Si MOSFETs by High Resolution TEM Measurements and Novel Characterization Scheme of Si/SiO_2 Interface Roughness

  ZHAO Y.; MATSUMOTO H.; SATO T.; KOYAMA S.; TAKENAKA M.; TAKAGI S.  半導体・集積回路技術シンポジウム講演論文集  73-  101  -104  2009/07
• Electrical Properties of Ge MIS Interface Defects

  TAOKA Noriyuki; MIZUBAYASHI Wataru; MORITA Yukinori; MIGITA Shinji; OTA Hiroyuki; TAKAGI Shinich  IEICE technical report  109-  (87)  21  -26  2009/06
• MOVPE装置を用いたAs気相ドーピングによるGe p-n接合の電気特性

  森井清仁; 中根了昌; 杉山正和; 中野義昭; 竹中充; 竹中充; 高木信一  応用物理学関係連合講演会講演予稿集  56th-  (2)  2009
• 微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析

  杉山正和; 出浦桃子; 星井拓也; 山本剛久; 幾原雄一; 田尻寛男; 坂田修身; 木村滋; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭  応用物理学関係連合講演会講演予稿集  55th-  (1)  2008
• 微小領域選択成長によるSi(111)基板上へのInAsピラーの形成

  星井拓也; 出浦桃子; 杉山正和; 中根了昌; 菅原聡; 竹中充; 中野義昭; 高木信一  応用物理学関係連合講演会講演予稿集  55th-  (1)  2008
• 微小領域選択MOVPEにおけるSi上InGaAsの横方向成長に対するGa組成の影響

  出浦桃子; 星井拓也; 杉山正和; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭  応用物理学関係連合講演会講演予稿集  55th-  (1)  2008
• Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method

  MATSUBARA Hiroshi; KUMAGAI Hiroshi; SUGAHARA Satoshi; TAKENAKA Mitsuru; TAKAGI Shin-ichi  Extended abstracts of the ... Conference on Solid State Devices and Materials  2007-  18  -19  2007/09
• 微小孔を介したSi基板上InGaAs成長におけるモフォロジー向上

  星井拓也; 出浦桃子; 杉山正和; 中根了昌; 菅原聡; 竹中充; 中野義昭; 高木信一; 高木信一  応用物理学会学術講演会講演予稿集  68th-  (1)  2007
• Si上III/V族化合物半導体の選択MOVPEにおける初期核発生過程の観察と制御

  出浦桃子; 杉山正和; 星井拓也; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭  応用物理学会学術講演会講演予稿集  68th-  (1)  2007
• Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge

  KUMAGAI Hiroshi; SHICHIJO Masato; ISHIKAWA Hiroto; HOSHII Takuya; SUGAHARA Satoshi; UCHIDA Yasutaka; TAKAGI Shinichi  Extended abstracts of the ... Conference on Solid State Devices and Materials  2006-  398  -399  2006/09
• Fully-Depleted SOI CMOS circuits and technology: For ultralow-power applications

  Takayasu Sakurai; Akira Matsuzawa; Takakuni Douseki; Hideaki Matsuhashi; Toshiaki Tsuchiya; Yasuhisa Omura; Hiroshi Shimomura; Masashi Yonemaru; Koji Fujii; Atsushi Kameyama; Hiroshi Kawaguchi; Tsuneo Tsukahara; Minoru Kozaki; Masayoshi Kinoshita; Akihiro Sawada; Yasuyuki Matsuya; Jun Terada; Yoshitsugu Inagaki; Tsuneaki Fuse; Yusuke Ohtomo; Hiroshi Koizumi; Shunsuke Baba; Kazuyoshi Nishimura; Yoshifumi Yoshida; Norio Hama; Tohru Mogami; Toshiro Hiramoto; Ken Uchida; Shin-Ichi Takagi; Toshinori Numata  Fully-Depleted SOI CMOS Circuits and Technology: For Ultralow-Power Applications  1  -411  2006
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs

  ISHIHARA Takamitsu; UCHIDA Ken; KOGA Junji; TAKAGI Shin-ichi  Extended abstracts of the ... Conference on Solid State Devices and Materials  2005-  42  -43  2005/09
• Performance Enhancements of Short Channel Strained-SOI MOSFETs

  NUMATA Toshinori; IRISAWA Toshifumi; TEZUKA Tsutomu; KOGA Junji; HIRASHITA Norio; USUDA Koji; TOYODA Eiji; MIYAMURA Yoshiji; TANABE Akihito; SUGIYAMA Naoharu; TAKAGI Shin-ichi  電気学会研究会資料. EDD, 電子デバイス研究会  2005-  (37)  29  -33  2005/03
• Performance enhancements of partially- and fully- depleted strained-SOI MOSFETs

  NUMATA T.; IRISAWA T.; TEDUKA T.; KOGA J.; HIRASHITA N.; USUDA K.; TOYODA E.; MIYAMURA Y.; TANABE A.; SUGIYAMA N.; TAKAGI S.  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス  104-  (577)  5  -8  2005/01
• Strained SOI technology for high-performance, low-power CMOS applications

  Takagi, S.; Mizuno, T.; Tezuka, T.; Sugiyama, N.; Numata, T.; Usuda, K.; Moriyama, Y.; Nakaharai, S.; Koga, J.; Tanabe, A.; Maeda, T.; Ieee, Ieee  2003 Ieee International Solid-State Circuits Conference: Digest of Technical Papers  46-  376  -+  2003  [Refereed]
  
• Si/SiGeヘテロ構造を用いたMOSデバイス技術

  高木信一  2003応用物理学会誌  72-  (3)  284  -290  2003
• 量子閉じ込め効果が薄膜SOI MOSFETの電気特性に与える影響について

  内田 建; 古賀 淳二; 大場 竜二; 沼田 敏典; 高木 信一  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス  101-  (573)  89  -94  2002/01
• Design for scaled thin film strained-SOI CMOS devices with higher carrier mobility

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Numata, T.; Maeda, T.; Takagi, S.; Electronic Devices Society Of Ieee; Electronic Devices Society Of, Ieee  INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST  31-34-  31  -34  2002  [Refereed]
  
• Sub-μm Si Single-Electron Tunneling Devices on Self-Undulated Hyper-Thin Silicon-On-Insulator Films

  UCHIDA Ken; KOGA Junji; OHBA Ryuji; TAKAGI Shin-ichi; TORIUMI Akira  Technical report of IEICE. SDM  99-  (617)  35  -39  2000/02
• サブバンド構造変調を利用した高性能超薄膜SOI-MOSFET (特集:ナノ領域の先端研究--21世紀のキー技術を求めて)

  高木 信一; 古賀 淳二; 鳥海 明  東芝レビュー  54-  (2)  25  -28  1999/02

Awards & Honors

• 2019/03 応用物理学会 2018年度APEX/JJAP編集貢献賞
  
• 2017/04 内閣府 紫綬褒章
   キャリア輸送特性の明確化・モデル化による高性能MOSトランジスタの開発
• 2015/04 文部科学省 平成27年度科学技術分野の文部科学大臣表彰 研究部門
   CMOS中のキャリア輸送特性の理解と高性能化に関する研究
• 2013/12 IEEE IEEE Andrew S. Grove Award
   For contributions to the understanding of transport properties in inversion layers of high-performance MOSFETs
• 2013/04 応用物理学会 2012年度APEX/JJAP編集貢献賞
  
• 2012/09 第12回（平成24年度）山崎貞一賞 半導体及び半導体装置分野
   Si MOSFETのチャネル内キャリア輸送特性の解明と高移動度化への先駆的貢献
• 2008/09 応用物理学会 応用物理学会フェロー表彰
   MOSトランジスターの輸送現象の解明と高移動度化の研究
• 2007/09 応用物理学会 第29回応用物理学会論文賞 解説論文賞
   Si系高移動度MOSトランジスタ技術
• 2004/11 日本IBM 第18回日本 IBM科学賞エレクトロニクス部門
   Si MOS電界効果トランジスタにおけるキャリア輸送と新素子構造に関する研究
• 2004/02 International Solid State Circuits Conference 2004 International Solid State Circuits Conference (ISSCC) Takuo Sugano Outstanding Paper Award
   Strained Si-On-Insulator (Strained SOI) Technology for High Performance/Low Power CMOS Application

Research Grants & Projects

• Understanding carrier transport properties of ultra-thin semiconductor channel CMOS and establishing a method to enhance channel mobility

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2022/04 -2025/03 

  Author : 高木 信一
• Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2017/05 -2022/03 

  Author : Takagi Shinichi
• スティープスロープＭＯＳトランジスタに最適なＭＯＳゲートスタック構造に関する研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2016/10 -2019/03 

  Author : 高木 信一; HUANG PO-CHIN
• 3次元集積Ge/III-V CMOSに向けた素子技術基盤の構築

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2017/04 -2018/03 

  Author : 高木 信一
• Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineering

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2014/04 -2017/03 

  Author : Takagi Shinichi; TAKENAKA Mitsuru
• 高移動度チャネルＭＯＳＦＥＴのキャリア輸送と素子構造に関する理論的研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2012/04 -2015/03 

  Author : 高木 信一; ALAM Khairul; KHAIRUL Alam
• Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologies

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2011/04 -2014/03 

  Author : TAKAGI Shinichi; TAKENAKA Mitsuru
• Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2010 -2013 

  Author : ZAIMA Shigeaki; TAKENAKA Mitsuru; SAKASHITA Mitsuo; TANAKA Nobuo; TAKEUCHI Wakana; NAKATSUKA Osamu; TAKAGI Shinichi
• Understanding of mechanisms dominating inversion-layer mobility in strained-Si MOSFETs and establishment of guideline for the mobility enhancement

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2008 -2010 

  Author : TAKAGI Shinichi; MITSURU Takenaka
• Technology Evolution for Silicon Nano-Electronics

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2006 -2010 

  Author : ZAIMA Shigeaki; HORI Masaru; TAKAGI Shinichi; MASU Kazuya; MIYAZAKI Seiichi; HIRAMOTO Toshiro; TABATA Hitoshi
• 高移動度チャネル材料MOSFETのMOS界面とキャリア輸送特性に関する研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2008 -2009 

  Author : 高木 信一; ZHAO Yi
• Nano-structure functional devices based Ge-based channels

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2006 -2009 

  Author : TAKAGI Shinichi; SUGAHARA Satoshi; TAKENAKA Mitsuru
• Si系新チャネル材料MOSトランジスタにおけるキャリア輸送特性の研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2006 -2007 

  Author : 高木 信一; OLIVIER Weber
• Study on physical models for understanding the properties of strained-Si MOS Transistors

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2004 -2006 

  Author : TAKAGI Shinichi
• シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2005 -2005 

  Author : 財満 鎭明; 高木 信一; 宮崎 誠一; 堀 勝; 益 一哉; 田畑 仁