Tanamoto Tetsufumi

Researcher Information

Affiliation

Department of Data Science Professor

URL

https://jglobal.jst.go.jp/detail?JGLOBAL_ID=201901007629846387

J-Global ID

• 201901007629846387

Profile

• 1991年4月 - 2019年3月 株式会社東芝 研究開発センター
  
  2019年4月 - 帝京大学理工学部情報電子工学科

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment
• Natural sciences / Semiconductors, optical and atomic physics

Research Activity Information

Published Papers

• Effects of dissipation in reservoir computing using spin qubit array

  Shion Mifune; Taro Kanao; Tetsufumi Tanamoto

  JAPANESE JOURNAL OF APPLIED PHYSICS IOP Publishing Ltd 64 (4) 0021-4922 2025/04
• 3D Stacked Spin Qubit by TCAD Simulations

  Tetsufumi Tanamoto

  2024 International 3D Systems Integration Conference (3DIC) IEEE 1 - 4 2024/09
• Noise properties in the Coulomb blockade region of FinFETs

  Tetsufumi Tanamoto; Keiji Ono; Jun Deguchi; Junji Wadatsumi; Ryuichi Fujimoto

  Japanese Journal of Applied Physics IOP Publishing 63 (3) 03SP69 - 03SP69 0021-4922 2024/03
• Readout using resonant tunneling in silicon spin qubits

  Tetsufumi Tanamoto; Keiji Ono

  Journal of Applied Physics AIP Publishing 134 (21) 0021-8979 2023/12 [Refereed]
  
• SIMULATION OF DELAYED BUSES IN A DUMPLING STATE AND ANALYSIS OF MAXIMUM WAITING TIME USING LOGISTIC REGRESSION

  Tetsufumi TANAMOTO; Haruya SEKIGUCHI; Souta ORIMO; Taisei KAWAKAMI

  Transport Problems Silesian University of Technology 18 (2) 171 - 180 1896-0596 2023/06 [Refereed]
  
• Classical SPICE simulation of superconducting quantum circuits

  Tetsufumi Tanamoto; Toyofumi Ishikawa; Kunihiro Inomata; Shumpei Masuda; Tamio Omuma; Shiro Kawabata

  Applied Physics Express IOP Publishing 16 (3) 034501 - 034501 1882-0778 2023/03 [Refereed]
  
• SPICE compact model of controlling electrons of spin qubits using FinFET

  Elias A. Pérez-Rodríguez; María T. Orvañanos-Guerrero; Tetsufumi Tanamoto

  Japanese Journal of Applied Physics IOP Publishing 62 (SC) SC1065 - SC1065 0021-4922 2023/02 [Refereed]
  
• Five and three quantum dot systems as apparatuses for measuring energy levels

  Tetsufumi Tanamoto; Tomosuke Aono

  Physical Review B American Physical Society (APS) 106 (12) 2469-9950 2022/09 [Refereed]
  
• Silicon quantum annealing machines using conventional CMOS devices

  Tetsufumi Tanamoto

  6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 226 - 228 2022 [Refereed][Invited]
  
• Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits

  Tetsufumi Tanamoto; Keiji Ono

  Applied Physics Letters 119 (17) 0003-6951 2021/10 [Refereed]
  
• Compact spin qubits using the common gate structure of fin field-effect transistors

  Tetsufumi Tanamoto; Keiji Ono

  AIP Advances 11 (4) 2021/04 [Refereed]
  
• Generation of all-to-all connections in a two-dimensional qubit array with two-body interactions

  Tetsufumi Tanamoto

  JOURNAL OF APPLIED PHYSICS AMER INST PHYSICS 129 (1) 0021-8979 2021/01 [Refereed]
  
• Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

  Kimihiko Kato; Tetsufumi Tanamoto; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE) 67 (9) 3876 - 3882 0018-9383 2020/09 [Refereed]
  
• SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET.

  Tetsufumi Tanamoto; Chika Tanaka; Shinichi Takagi

  IEICE Electron. Express Institute of Electronics, Information and Communications Engineers (IEICE) 17 (6) 20200025 - 20200025 2020 [Refereed]
  
• Reservoir Computing on Spin-Torque Oscillator Array

  Taro Kanao; Hirofumi Suto; Koichi Mizushima; Hayato Goto; Tetsufumi Tanamoto; Tazumi Nagasawa

  Phys. Rev. Applied 12 024052  2019/08 [Refereed]
  
• Application of single-electron effects to fingerprints of chips using image recognition algorithms

  T. Tanamoto; Y. Nishi; K. Ono

  Applied Physics Letters AIP Publishing 115 (3) 033504 - 033504 0003-6951 2019/07 [Refereed]
  
• Quantum Annealing Machines Based on Semiconductor Nanostructures

  Tanamoto Tetsufumi; Nishi Yoshifumi; Deguchi Jun

  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 88 (6) 0031-9015 2019/06 [Refereed]
  
• Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET

  Huang Po-Chin; Tanamoto Tetsufumi; Goto Masakazu; Takenaka Mitsuru; Takagi Shinichi

  IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 65 (12) 5511 - 5517 0018-9383 2018/12 [Refereed]
  
• Calculation of a capacitively-coupled floating gate array toward quantum annealing machine

  Tanamoto Tetsufumi; Higashi Yusuke; Deguchi Jun

  JOURNAL OF APPLIED PHYSICS 124 (15) 0021-8979 2018/10 [Refereed]
  
• Application of spin qubits to Physically Unclonable Function

  Tanamoto Tetsufumi; Nishi Yoshifumi; Ono Keiji

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2018.2 1950 - 1950 2018/09
• Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60mV/decade for 0.3V operation

  Kentaro Kukita; Tadayoshi Uechi; Junji Shimokawa; Masakazu Goto; Yoshinori Yokota; Shigeru Kawanaka; Tetsufumi Tanamoto; Hiroyoshi Tanimoto; Shinichi Takagi

  Japanese Journal of Applied Physics Japan Society of Applied Physics 57 (4) 1347-4065 2018/04 [Refereed]
  
• Artificial neuron operations and spike-timing-dependent plasticity using memristive devices for brain-inspired computing

  Takao Marukame; Yoshifumi Nishi; Shin-ichi Yasuda; Tetsufumi Tanamoto

  Japanese Journal of Applied Physics Japan Society of Applied Physics 57 (4) 1347-4065 2018/04 [Refereed]
  
• SPICE simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation.

  Tetsufumi Tanamoto; Chika Tanaka; Satoshi Takaya; Masato Koyama

  IEICE Electron. Express Institute of Electronics Information Communication Engineers 15 (3) 20171232 - 20171232 1349-2543 2018 [Refereed]
  
• Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

  K. Ono; G. Giavaras; T. Tanamoto; T. Ohguro; X. Hu; F. Nori

  PHYSICAL REVIEW LETTERS AMER PHYSICAL SOC 119 (15) 0031-9007 2017/10 [Refereed]
  
• Work sharing of qubits in topological error corrections

  Tetsufumi Tanamoto; Hayato Goto

  PHYSICAL REVIEW A AMER PHYSICAL SOC 96 (2) 2469-9926 2017/08 [Refereed]
  
• Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

  Satoshi Takaya; Tetsufumi Tanamoto; Hiroki Noguchi; Kazutaka Ikegami; Keiko Abe; Shinobu Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS IOP PUBLISHING LTD 56 (4) 0021-4922 2017/04 [Refereed]
  
• SPICE Simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation.

  Tetsufumi Tanamoto; Chika Tanaka; Satoshi Takaya; Masato Koyama

  CoRR abs/1710.07375 2017
• Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology.

  Tetsufumi Tanamoto; Satoshi Takaya; Nobuaki Sakamoto; Hirotsugu Kasho; Shinichi Yasuda; Takao Marukame; Shinobu Fujita; Yuichiro Mitani

  CoRR IOP PUBLISHING LTD abs/1703.00073 (4) 0021-4922 2017 [Refereed]
  
• Physically Unclonable Function Using an Initial Waveform of Ring Oscillators.

  Tetsufumi Tanamoto; Shinichi Yasuda; Satoshi Takaya; Shinobu Fujita

  IEEE Trans. Circuits Syst. II Express Briefs IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 64-II (7) 827 - 831 1549-7747 2017 [Refereed]
  
• Generation of chiral spin state by quantum simulation

  Tetsufumi Tanamoto

  PHYSICAL REVIEW B AMER PHYSICAL SOC 93 (23) 2469-9950 2016/06 [Refereed]
  
• High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code.

  Tetsufumi Tanamoto; Naoharu Shimomura; Sumio Ikegawa; Mari Matsumoto; Shinobu Fujita; Hiroaki Yoda

  CoRR abs/1606.03147 2016
• Physically Unclonable Function using Initial Waveform of Ring Oscillators.

  Tetsufumi Tanamoto; Shinichi Yasuda; Satoshi Takaya; Shinobu Fujita

  CoRR abs/1605.03290 2016
• Dynamic creation of a topologically-ordered Hamiltonian using spin-pulse control in the Heisenberg model

  Tetsufumi Tanamoto; Keiji Ono; Yu-xi Liu; Franco Nori

  SCIENTIFIC REPORTS NATURE PUBLISHING GROUP 5 2045-2322 2015/06 [Refereed]
  
• Dynamic creation of a topologically-ordered Hamiltonian using spin-pulse control in the Heisenberg model (vol 5, 10076, 2015)

  Tetsufumi Tanamoto; Keiji Ono; Yu-xi Liu; Franco Nori

  SCIENTIFIC REPORTS NATURE PUBLISHING GROUP 6 2045-2322 2015/06 [Refereed]
  
• Further Investigations on Traps Stabilities in Random Telegraph Signal Noise and the Application to a Novel Concept Physical Unclonable Function (PUF) with Robust Reliabilities

  Jiezhi Chen; Tetsufumi Tanamoto; Hiroki Noguchi; Yuichiro Mitani

  2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) IEEE 2015 [Refereed]
  
• Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n(+)-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy

  Tomoaki Inokuchi; Mizue Ishikawa; Hideyuki Sugiyama; Tetsufumi Tanamoto; Yoshiaki Saito

  APPLIED PHYSICS LETTERS AMER INST PHYSICS 105 (23) 0003-6951 2014/12 [Refereed]
  
• Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

  Yoshiaki Saito; Mizue Ishikawa; Tetsufumi Tanamoto; Tomoaki Inokuchi; Hideyuki Sugiyama; Kohei Hamaya; Nobuki Tezuka

  59th annual Magnetism & Magnetic Materials Conference (MMM2014) 2014/11 [Refereed]
  
• Influence of interface roughness in CoFe/MgO/n+-Si junctions on spin accumulation and spin transport signals

  Mizue Ishikawa; Hideyuki Sugiyama; Tomoaki Inokuchi; Tetsufumi Tanamoto; Kohei Hamaya; Nobuki Tezuka; Yoshiaki Saito

  59th annual Magnetism & Magnetic Materials Conference (MMM2014) 2014/11 [Refereed]
  
• Extracting Physically Unclonable Function From Spin Transfer Switching Characteristics in Magnetic Tunnel Junctions

  Takao Marukame; Tetsufumi Tanamoto; Yuichiro Mitani

  IEEE TRANSACTIONS ON MAGNETICS IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 50 (11) 0018-9464 2014/11 [Refereed]
  
• Effects of interface electric _eld on the magnetoresistance for nonlocal setup

  T. Tanamoto; M. Ishikawa; T. Inokuchi; H. Sugiyama; Y. Saito

  International conference on solid state devices and materials (SSDM2014) 2014/09 [Refereed]
  
• Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

  H. Sugiyama; M. Ishikawa; T. Inokuchi; T. Tanamoto; Y. Saito; N. Tezuka

  Solid State Comm. 190 49 - 52 2014/04 [Refereed]
  
• Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/SOI lateral spin valves

  Y. Saito; T. Tanamoto; M. Ishikawa; H. Sugiyama; T. Inokuchi; K. Hamaya; N. Tezuka

  J. Appl. Phys. 115 17C514-1 - 17C514-3 2014/02 [Refereed]
  
• Highly reliable and low-power nonvolatile cache memory with advanced perpendicular STT-MRAM for high-performance CPU.

  Hiroki Noguchi; Kazutaka Ikegami; Naoharu Shimomura; Tetsufumi Tanamoto; Junichi Ito; Shinobu Fujita

  IEEE Symposium on VLSI Circuits, Digest of Technical Papers Institute of Electrical and Electronics Engineers Inc. 1 - 2 2014 [Refereed]
  
• Spin injection, detection and local magnetoresistance through Si at room temperature in ferrmagnet/MgO/Si lateral spin valves

  Y. Saito; M. Ishikawa; T. Inokuchi; H. Sugiyama; T. Tanamoto; N. Tezuka; K. Hamaya

  IEEE International nanoelectronics conference, 2014 (IEEE INEC 2014) 2014 [Refereed][Invited]
  
• Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

  M. Ishikawa; H. Sugiyama; T. Inokuchi; T. Tanamoto; K. Hamaya; N. Tezuka; Y. Saito

  J. Appl. Phys. 114 243904-1 - 243904-6 2013/12 [Refereed]
  
• Implementation of standard quantum error-correction codes for solid-state qubits

  Tetsufumi Tanamoto

  PHYSICAL REVIEW A AMER PHYSICAL SOC 88 (6) 1050-2947 2013/12 [Refereed]
  
• Local magnetoresistance through Si at room temperature and its bias voltage dependence in CoFe/MgO/SOI lateral spin valves

  Y. Saito; T. Tanamoto; M. Ishikawa; H. Sugiyama; T. Inokuchi; K. Hamaya; N. Tezuka

  58th Annual Conference on Magnetism and Magnetic Materials (2013 MMM Conference) HB-04  2013/11 [Refereed]
  
• Inelastic electron tunneling spectroscopy study of CoFe/MgO/n+-Si junctions

  T. Inokuchi; M. Ishikawa; H. Sugiyama; T. Tanamoto; Y. Saito

  58th Annual Conference on Magnetism and Magnetic Materials (2013 MMM Conference) AX-06  2013/11 [Refereed]
  
• Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor

  K. Ono; T. Tanamoto; T. Ohguro

  Applied Physics Letters 103 (18) 0003-6951 2013/10 [Refereed]
  
• Strategy for implementing stabilizer-based codes on solid-state qubits

  Tetsufumi Tanamoto; Vladimir M. Stojanovic; Christoph Bruder; Daniel Becker

  PHYSICAL REVIEW A AMER PHYSICAL SOC 87 (5) 1050-2947 2013/05 [Refereed]
  
• Dynamic generation of topologically protected self-correcting quantum memory

  Daniel Becker; Tetsufumi Tanamoto; Adrian Hutter; Fabio L. Pedrocchi; Daniel Loss

  Physical Review A - Atomic, Molecular, and Optical Physics 87 (4) 1050-2947 2013/04 [Refereed]
  
• Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots

  Tetsufumi Tanamoto; Yu-xi Liu; Xuedong Hu; Franco Nori

  JAPANESE JOURNAL OF APPLIED PHYSICS IOP PUBLISHING LTD 52 (4) 0021-4922 2013/04 [Refereed]
  
• Effects of interface resistance asymmetry on local and non-local magnetoresistance structures

  Tetsufumi Tanamoto; Hideyuki Sugiyama; Tomoaki Inokuchi; Mizue Ishikawa; Yoshiaki Saito

  Japanese Journal of Applied Physics 52 (4) 0021-4922 2013/04 [Refereed]
  
• A Reconfigurable Architecture based on spin MOSFET

  T. Tanamoto; H. Sugiyama; T. Inokuchi; M. Ishikawa; Y. Saito

  Trends in nanotechnology (TNT2013) 2013 [Refereed][Invited]
  
• Numerical Simulations of Automatic Change of Threshold Voltage Shift in SRAM With Double-Floating-Gate Structures

  Tetsufumi Tanamoto; Kosuke Tatsumura; Kiwamu Sakuma; Atsuhiro Kinoshita; Shinobu Fujita; Kouichi Muraoka

  IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 59 (12) 3255 - 3262 0018-9383 2012/12 [Refereed]
  
• Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices

  Yoshiaki Saito; Mizue Ishikawa; Tomoaki Inokuchi; Hideyuki Sugiyama; Tetsufumi Tanamoto; Kohei Hamaya; Nobuki Tezuka

  IEEE TRANSACTIONS ON MAGNETICS IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 48 (11) 2739 - 2745 0018-9464 2012/11 [Refereed]
  
• Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/MgO/SOI devices

  M. Ishikawa; T. Inokuchi; H. Sugiyama; T. Tanamoto; K. Hamaya; N. Tezuka; Y. Saito

  International conference on Solid State Devices and Materials (SSDM2012) 2012/09 [Refereed]
  
• Preserving universal resources for one-way quantum computing

  Tetsufumi Tanamoto; Daniel Becker; Vladimir M. Stojanovic; Christoph Bruder

  PHYSICAL REVIEW A AMER PHYSICAL SOC 86 (3) 1050-2947 2012/09 [Refereed]
  
• Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots

  Tetsufumi Tanamoto; Keiji Ono; Franco Nori

  JAPANESE JOURNAL OF APPLIED PHYSICS JAPAN SOC APPLIED PHYSICS 51 (2) 0021-4922 2012/02 [Refereed]
  
• Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (vol 109, 07C312, 2011)

  Tetsufumi Tanamoto; Hideyuki Sugiyama; Tomoaki Inokuchi; Takao Marukame; Mizue Ishikawa; Kazutaka Ikegami; Yoshiaki Saito

  JOURNAL OF APPLIED PHYSICS AMER INST PHYSICS 110 (5) 0021-8979 2011/09 [Refereed]
  
• Spin injection, transport, and read/write operation in spin-based MOSFET

  Yoshiaki Saito; Takao Marukame; Tomoaki Inokuchi; Mizue Ishikawa; Hideyuki Sugiyama; Tetsufumi Tanamoto

  THIN SOLID FILMS ELSEVIER SCIENCE SA 519 (23) 8266 - 8273 0040-6090 2011/09 [Refereed]
  
• Spin-based MOSFET and its applications

  Y. Saito; T. Marukame; T. Inokuchi; M. Ishikawa; H. Sugiyama; T. Tanamoto

  J. Electrochemical Soc. 158 H1068 - H1076 2011/08 [Refereed]
  
• High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code

  Tetsufumi Tanamoto; Naoharu Shimomura; Sumio Ikegawa; Mari Matsumoto; Shinobu Fujita; Hiroaki Yoda

  JAPANESE JOURNAL OF APPLIED PHYSICS JAPAN SOC APPLIED PHYSICS 50 (4) 0021-4922 2011/04 [Refereed]
  
• Scalability of spin field programmable gate arrary: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor

  Tetsufumi Tanamoto; Hideyuki Sugiyama; Tomoaki Inokuchi; Takao Marukame; Mizue Ishikawa; Kazutaka Ikegami; Yoshiaki Saito

  JOURNAL OF APPLIED PHYSICS AMER INST PHYSICS 109 (7) 0021-8979 2011/04 [Refereed]
  
• Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET

  Tetsufumi Tanamoto; Hideyuki Sugiyama; Tomoaki Inokuchi; Takao Marukame; Mizue Ishikawa; Kazutaka Ikegami; Yoshiaki Saito

  CoRR abs/1104.1493 2011
• Nonvolatile configuration memory cell for low power field programmable gate array

  Shinichi Yasuda; Kazutaka Ikegami; Tetsufumi Tanamoto; Atsuhiro Kinoshita; Keiko Abe; Shinobu Fujita

  2011 3rd IEEE International Memory Workshop, IMW 2011 2011 [Refereed]
  
• Spin-based MOSFET: a promising candidate for beyond CMOS device using nanotechnology

  Y. Saito; T. Inokuchi; M. Ishikawa; H. Sugiyama; T. Tanamoto

  he Seventh International Nanotechnology Conference on Communication and Cooperation (INC7) 2011 [Refereed][Invited]
  
• 不揮発再構成可能な回路へのスピンＭＯＳＦＥＴの応用

  杉山 英行; 井口 智明; 丸亀 孝生; 棚本 哲史; 石川 瑞恵; 斉藤 好昭

  応用物理学会学術講演会講演予稿集 公益社団法人 応用物理学会 2010.2 1823 - 1823 2010/08
• Numerical approach for retention characteristics of double floating-gate memories

  Tetsufumi Tanamoto; Kouichi Muraoka

  APPLIED PHYSICS LETTERS AMER INST PHYSICS 96 (2) 0003-6951 2010/01 [Refereed]
  
• Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement

  Tetsufumi Tanamoto

  JAPANESE JOURNAL OF APPLIED PHYSICS JAPAN SOC APPLIED PHYSICS 49 (4) 0021-4922 2010 [Refereed]
  
• Reconfigurable Characteristics of Spintronics-based MOSFETs for Nonvolatile Integrated Circuits

  Tomoaki Inokuchi; Takao Marukame; Tetsufumi Tanamoto; Hideyuki Sugiyama; Mizue Ishikawa; Yoshiaki Saito

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS IEEE 119 - 120 2010 [Refereed]
  
• High-performance FPGA based on novel DSS-MOSFET and non-volatile configuration memory (abstract only).

  Shinichi Yasuda; Tetsufumi Tanamoto; Kazutaka Ikegami; Atsuhiro Kinoshita; Keiko Abe; Hirotaka Nishino; Shinobu Fujita

  FPGA 10 ASSOC COMPUTING MACHINERY 291 - 291 2010 [Refereed]
  
• Noise characteristics of the Fano effect and the Fano-Kondo effect in triple quantum dots

  T. Tanamoto; Y. Nishi; S. Fujita

  JOURNAL OF PHYSICS-CONDENSED MATTER IOP PUBLISHING LTD 21 (14) 0953-8984 2009/04 [Refereed]
  
• Efficient Quantum Circuits for One-Way Quantum Computing

  Tetsufumi Tanamoto; Yu-xi Liu; Xuedong Hu; Franco Nori

  PHYSICAL REVIEW LETTERS AMER PHYSICAL SOC 102 (10) 0031-9007 2009/03 [Refereed]
  
• NOISE CHARACTERISTICS OF THE FANO EFFECT AND FANO-KONDO EFFECT IN TRIPLE QUANTUM DOTS, AIMING AT CHARGE QUBIT DETECTION

  Tetsufumi Tanamoto; Yoshifumi Nishi; Shinobu Fujita

  PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY WORLD SCIENTIFIC PUBL CO PTE LTD 258 - 261 2009 [Refereed]
  
• Perspectives and Issues in 3D-IC from Designers' Point of View.

  Shinobu Fujita; Keiko Abe; Kumiko Nomura; Shinichi Yasuda; Tetsufumi Tanamoto

  ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5 IEEE 73 - 76 2009 [Refereed]
  
• Efficient purification protocols using iSWAP gates in solid-state qubits

  Tetsufumi Tanamoto; Koji Maruyama; Yu-xi Liu; Xuedong Hu; Franco Nori

  PHYSICAL REVIEW A AMER PHYSICAL SOC 78 (6) 1050-2947 2008/12 [Refereed]
  
• Novel Look-Up Table Circuits Using Spin MOSFET

  H. Sugiyama; T. Tanamoto; T. Marukame; M. Ishikawa; T. Inokuchi; Y. Saito

  2008 International conference on Solid State Devices and Materials (SSDM2008) 2008/09 [Refereed]
  
• Non-Stoichiometric SixN Metal-Oxide-Semiconductor Field-Effect Transistor for Compact Random Number Generator with 0.3 Mbit/s Generation Rate

  Mari Matsumoto; Ryuji Ohba; Shin-ichi Yasuda; Ken Uchida; Tetsufumi Tanamoto; Shinobu Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS JAPAN SOC APPLIED PHYSICS 47 (8) 6191 - 6195 0021-4922 2008/08 [Refereed]
  
• Folding tape method: Novel layout method for 3D circuit to effectively decrease interconnect delay

  Shinobu Fujita; Keiko Abe; Kumiko Nomura; Shin'Ichi Yasuda; Tetsufumi Tanamoto

  2008 Proceedings - 25th International VLSI Multilevel Interconnection Conference, VMIC 2008 331 - 336 2008
• 1200μm2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application.

  Mari Matsumoto; Shinichi Yasuda; Ryuji Ohba; Kazutaka Ikegami; Tetsufumi Tanamoto; Shinobu Fujita

  Digest of Technical Papers - IEEE International Solid-State Circuits Conference IEEE 51 414 - 415 0193-6530 2008 [Refereed]
  
• Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications

  Ken Uchida; Tetsufumi Tanamoto; Shinobu Fujita

  SOLID-STATE ELECTRONICS PERGAMON-ELSEVIER SCIENCE LTD 51 (11-12) 1552 - 1557 0038-1101 2007/11 [Refereed]
  
• Fano-Kondo effect in a two-level system with triple quantum dots

  Tetsufumi Tanamoto; Yoshifumi Nishi

  PHYSICAL REVIEW B AMER PHYSICAL SOC 76 (15) 1098-0121 2007/10 [Refereed]
  
• Efficient one-step generation of large cluster states with solid-state circuits

  J. Q. You; Xiang-bin Wang; Tetsufumi Tanamoto; Franco Nori

  PHYSICAL REVIEW A AMERICAN PHYSICAL SOC 75 (5) 1050-2947 2007/05 [Refereed]
  
• The effect of side traps on ballistic transistor in Kondo regime

  Tetsufumi Tanamoto; Ken Uchida; Shinobu Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS INST PURE APPLIED PHYSICS 46 (4B) 2073 - 2075 0021-4922 2007/04 [Refereed]
  
• Cluster states in charge qubits based on coupled quantum dots

  T. Tanamoto; S. Fujita; X. Hu; Y. -x. Liu; F. Nori

  PHYSICS OF SEMICONDUCTORS, PTS A AND B AMER INST PHYSICS 893 1105 - + 0094-243X 2007 [Refereed]
  
• Producing cluster states in charge qubits and flux qubits

  Tetsufumi Tanamoto; Yu-xi Liu; Shinobu Fujita; Xuedong Hu; Franco Nori

  PHYSICAL REVIEW LETTERS AMERICAN PHYSICAL SOC 97 (23) 0031-9007 2006/12 [Refereed]
  
• The effect of local structure and non-uniformity on decoherence-free states of charge qubits

  Tetsufumi Tanamoto; Shinobu Fujita

  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES ELSEVIER SCIENCE BV 34 (1-2) 530 - 533 1386-9477 2006/08 [Refereed]
  
• Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation.

  Ryuji Ohba; Daisuke Matsushita; Koichi Muraoka; Shinichi Yasuda; Tetsufumi Tanamoto; Ken Uchida; Shinobu Fujita

  IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, PROCEEDINGS IEEE COMPUTER SOC 231 - 236 2006 [Refereed]
  
• 3D Nanowire-Based Programmable Logic.

  Benjamin Gojman; Raphael Rubin; Concetta Pilotto; André DeHon; Tetsufumi Tanamoto

  2006 1st International Conference on Nano-Networks and Workshops IEEE 1 - 5 2006 [Refereed]
  
• Measurement of two-qubit states with quantum point contacts coupled by a quantum dot

  Tetsufumi Tanamoto; Xuedong Hu

  Journal of Physics Condensed Matter 17 (43) 6895 - 6909 0953-8984 2005/11 [Refereed]
  
• Device simulations in coupled floating-gate memories

  T Tanamoto; R Ohba; S Yasuda; K Abe; S Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS JAPAN SOC APPLIED PHYSICS 44 (8) 6349 - 6353 0021-4922 2005/08 [Refereed]
  
• Decoherence-free states for charge qubits under local nonuniformity

  T Tanamoto; S Fujita

  PHYSICAL REVIEW B AMERICAN PHYSICAL SOC 72 (8) 1098-0121 2005/08 [Refereed]
  
• Physical random number generators for cryptographic application in mobile devices

  Shinichi Yasuda; Tetsufumi Tanamoto; Ryuji Ohba; Keiko Abe; Hanae Nozaki; Shinobu Fujita

  Proceedings of ESSCIRC 2005: 31st European Solid-State Circuits Conference 399 - 402 2005 [Refereed]
  
• Physical random number generator based on MOS structure after soft breakdown

  Shinichi Yasuda; Hideki Satake; Tetsufumi Tanamoto; Ryuji Ohba; Ken Uchida; Shinobu Fujita

  IEEE Journal of Solid-State Circuits 39 (8) 1375 - 1377 0018-9200 2004/08 [Refereed]
  
• Measurement of two-qubit states by a two-island single-electron transistor

  T Tanamoto; XD Hu

  PHYSICAL REVIEW B AMERICAN PHYSICAL SOC 69 (11) 1098-0121 2004/03 [Refereed]
  
• Noise power spectrum of a long-channel current line with electron traps: Slave-boson mean field theory

  T Tanamoto; R Ohba; K Uchida; S Fujita

  JOURNAL OF APPLIED PHYSICS AMER INST PHYSICS 94 (6) 3979 - 3983 0021-8979 2003/09 [Refereed]
  
• Ultra Small Random Number Generating Circuits With A Novel Noise Source Device

  Shinichi Yasuda; Hideki Satake; Hanae Nozaki; Tetsufumi Tanamoto; Ryuji Ohba; Ken Uchida; Atsuhiro Kinoshita; Shinobu Fujita

  Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials The Japan Society of Applied Physics 2003
• Ultra-small physical random number generators based on Si NanoDevices for security systems and comparison to other large physical random number generators

  S Yasuda; K Uchida; T Tanamoto; R Ohba; S Fujita

  2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS IEEE 531 - 534 2003 [Refereed]
  
• Narrow-channel-MOSFET having Si-dots for high-rate generation of random numbers

  R Ohba; S Yasuda; T Tanamoto; K Uchida; S Fujita

  2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST IEEE 745 - 748 2003 [Refereed]
  
• Novel random number generators based on Si nanodevices for mobile communication security systems

  S Fujita; K Uchida; S Yasuda; R Ohba; T Tanamoto

  NANOTECH 2003, VOL 3 COMPUTATIONAL PUBLICATIONS 309 - 312 2003 [Refereed]
  
• Qubit system in capacitively coupled semiconductor quantum dots

  T Tanamoto

  SUPERLATTICES AND MICROSTRUCTURES ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD 31 (2-4) 151 - 157 0749-6036 2002/02 [Refereed]
  
• Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications

  K Uchida; T Tanamoto; R Ohba; S Yasuda; S Fujita

  INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST IEEE 177 - 180 2002 [Refereed]
  
• One- and two-dimensional N-qubit systems in capacitively coupled quantum dots

  T Tanamoto

  PHYSICAL REVIEW A AMERICAN PHYSICAL SOC 64 (6) 1050-2947 2001/12 [Refereed]
  
• Coulomb blockade effects in coupled quantum dots: Theory based on the Keldysh Green's function method

  T Tanamoto

  PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II SPRINGER-VERLAG BERLIN 87 1105 - 1106 0930-8989 2001 [Refereed]
  
• Quantum gates by coupled asymmetric quantum dots and controlled-NOT-gate operation

  T Tanamoto

  PHYSICAL REVIEW A AMERICAN PHYSICAL SOC 61 (2) 1050-2947 2000/02 [Refereed]
  
• Quantum gates by coupled quantum dots and measurement procedure in field-effect-transistor structure

  T Tanamoto

  FORTSCHRITTE DER PHYSIK-PROGRESS OF PHYSICS WILEY-V C H VERLAG GMBH 48 (9-11) 1005 - 1021 0015-8208 2000 [Refereed]
  
• Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

  T Tanamoto

  PHYSICA B ELSEVIER SCIENCE BV 272 (1-4) 45 - 48 0921-4526 1999/12 [Refereed]
  
• Effects of resonant tunneling on magnetoresistance through a quantum dot

  T Tanamoto; S Fujita

  PHYSICAL REVIEW B AMER PHYSICAL SOC 59 (7) 4985 - 4991 1098-0121 1999/02 [Refereed]
  
• Interplay between the Coulomb blockade and resonant tunneling studied by the Keldysh Green's-function method

  T Tanamoto; M Ueda

  PHYSICAL REVIEW B AMER PHYSICAL SOC 57 (23) 14638 - 14641 1098-0121 1998/06 [Refereed]
  
• Coulomb blockade and enhancement of magnetoresistance change in ultrasmall ferromagnetic tunnel junctions

  S Iwabuchi; T Tanamoto; R Kitawaki

  PHYSICA B-CONDENSED MATTER ELSEVIER SCIENCE BV 249 276 - 280 0921-4526 1998/06 [Refereed]
  
• Coulomb blockade and higher order tunneling effect on magnetoresistance in ultrasmall ferromagnetic tunnel junctions

  S Iwabuchi; T Tanamoto; R Kitawaki

  SECOND INTERNATIONAL WORKSHOP ON PHYSICS AND MODELING OF DEVICES BASED ON LOW-DIMENSIONAL STRUCTURES, PROCEEDINGS IEEE COMPUTER SOC 78 - 82 1998 [Refereed]
  
• A percolation approach to dielectric breakdown statistics

  T Tanamoto; A Toriumi

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS JAPAN J APPLIED PHYSICS 36 (3B) 1439 - 1442 0021-4922 1997/03 [Refereed]
  
• Spin dynamics in high- Tc cuprates

  H. Fukuyama; H. Kohno; B. Normand; T. Tanamoto

  Physica B: Physics of Condensed Matter 213-214 (C) 6 - 10 0921-4526 1995/08
• FUNDAMENTAL-STUDIES ON QUANTUM INTERCONNECTIONS BETWEEN BALLISTIC ELECTRONS AND CELLULAR ARCHITECTURE

  Y NARUSE; R KATOH; T TANAMOTO; M SABA; S TAKAHASHI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS JAPAN J APPLIED PHYSICS 33 (12B) L1766 - L1768 0021-4922 1994/12 [Refereed]
  
• A Novel Quantum Cellular Automata Logic with Loop Structures

  Tanamoto Tetsufumi; Katoh Riichi; Naruse Yujiro

  Jpn J Appl Phys The Japan Society of Applied Physics 33 (10) L1502 - L1505 0021-4922 1994/10
• VALLEY CURRENT OF 3-DIMENSIONAL RESONANT-TUNNELING DIODE STUDIED BY THE IMPROVED OPTICAL-MODEL

  Y ZOHTA; T TANAMOTO

  JOURNAL OF APPLIED PHYSICS AMER INST PHYSICS 76 (4) 2343 - 2346 0021-8979 1994/08 [Refereed]
  
• MAGNETIC-PROPERTIES OF EXTENDED T-J MODEL .2. DYNAMICAL PROPERTIES

  T TANAMOTO; H KOHNO; H FUKUYAMA

  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN PHYSICAL SOC JAPAN 63 (7) 2739 - 2759 0031-9015 1994/07 [Refereed]
  
• MAGNETIC-PROPERTIES OF EXTENDED T-J MODEL .1. STATIC PROPERTIES

  T TANAMOTO; H KOHNO; H FUKUYAMA

  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN PHYSICAL SOC JAPAN 62 (2) 717 - 730 0031-9015 1993/02 [Refereed]
  
• MAGNETIC-PROPERTIES OF T-J MODEL

  T TANAMOTO; K KUBOKI; H FUKUYAMA

  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN PHYSICAL SOC JAPAN 60 (9) 3072 - 3092 0031-9015 1991/09 [Refereed]
  

MISC

• Spin qubits using FinFETs

  棚本哲史; 大野圭司  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  82nd-  2021
• Application of Random Telegraph Noise to Individual Authentication Technology Using Physical Unclonable Function (PUF)

  陳 杰智; 棚本 哲史; 三谷 祐一郎  東芝レビュー = Toshiba review  71-  (2)  23  -26  2016/02
• Invited Talk : Normally-Off Computing with Perpendicular STT-MRAM

  NOGUCHI Hiroki; IKEGAMI Kazutaka; SHIMOMURA Naoharu; TANAMOTO Tetsufumi; ITO Junichi; FUJITA Shinobu  IEICE technical report. Computer systems  114-  (346)  107  -112  2014/12
• Invited Talk : Normally-Off Computing with Perpendicular STT-MRAM

  NOGUCHI Hiroki; IKEGAMI Kazutaka; SHIMOMURA Naoharu; TANAMOTO Tetsufumi; ITO Junichi; FUJITA Shinobu  Technical report of IEICE. ICD  114-  (345)  107  -112  2014/12
• 8pAV-6 ESR spectrum and spin-orbit interaction in short-channel MOSFET

  Ono K; Tanamoto T; Ooguro T; Giavaras G; Nori F  Meeting Abstracts of the Physical Society of Japan  69-  (0)  479  -479  2014
• 29pAU-4 Creation of stress-voltage-induced defect and quantum-dot-like transport in short-channel MOSFET

  Ono K; Tanamoto T; Ooguro T  Meeting Abstracts of the Physical Society of Japan  69-  (0)  718  -718  2014
• 29aXQ-6 Quantum dot transport of MOSFET with partially nitrided oxide

  Ono K; Tanamoto T; Ooguro T  Meeting Abstracts of the Physical Society of Japan  68-  (0)  784  -784  2013
• Physical Random Number Generation Technology Supporting Security Network [IV] : Physical Random Number Generator Using Advanced Semiconductor Devices

  TANAMOTO Tetsufumi; SHIMOMURA Naoharu; MATSUMOTO Mari; OOBA Ryuji; YASUDA Shinichi; IKEGAWA Sumio; FUJITA Shinobu; YODA Hiroaki  The Journal of the Institute of Electronics, Information, and Communication Engineers  95-  (2)  137  -141  2012/02
• Spin-MOSFET Technologies for Realization of Advanced Memories and Logic ICs

  井口 智明; 棚本 哲史; 斉藤 好昭  東芝レビュー  66-  (11)  40  -43  2011/11
• 23pTM-10 Steady-state solution for dark states using a three-level system in coupled quantum dots

  Tanamoto T; Ono K; Nori Franco  Meeting Abstracts of the Physical Society of Japan  66-  (0)  697  -697  2011
• Application of Spin MOSFET to Nonvolatile and Reconfigurable LSIs

  INOKUCHI Tomoaki; MARUKAME Takao; TANAMOTO Tetsufumi; SUGIYAMA Hideyuki; ISHIKAWA Mizue; SAITO Yoshiaki  IEICE technical report  110-  (182)  125  -129  2010/08
• Application of Spin MOSFET to Nonvolatile and Reconfigurable LSIs

  INOKUCHI Tomoaki; MARUKAME Takao; TANAMOTO Tetsufumi; SUGIYAMA Hideyuki; ISHIKAWA Mizue; SAITO Yoshiaki  IEICE technical report  110-  (183)  125  -129  2010/08
• Metamaterials

  目良 裕; 近藤 公伯; 田中 英行; 棚本 哲史  應用物理  78-  (6)  502  -502  2009/06
• Evolving superconductive electronics applications : Toward a future quantum computer

  鵜澤 佳徳; 小林 慶裕; 棚本 哲史; 和田 健司  應用物理  78-  (1)  2  -2  2009/01
• 27aVE-5 Efficient purification protocols using iSWAP gates in solid-state qubits

  Tanamoto T; Hu X; Liu Y. X; Nori F  Meeting Abstracts of the Physical Society of Japan  64-  (0)  681  -681  2009
• Applied physics and evolution theory

  和田 健司; 植村 哲也; 重川 秀実; 棚本 哲史; 原 一広  應用物理  77-  (8)  902  -902  2008/08
• C-12-43 Physical Random Number Generator Consisting of a SiN MOSFET and Logic Gates

  Ikegami Kazutaka; Yasuda Shin'ichi; Matsumoto Mari; Ohba Ryuji; Tanamoto Tetsufumi; Fujita Shinobu  Proceedings of the IEICE General Conference  2008-  (2)  133  -133  2008/03
• 22pYF-5 Efficient one-way quantum computing in superconducting qubits

  Tanamoto T; Hu X; Liu Y; Nori F  Meeting Abstracts of the Physical Society of Japan  63-  (0)  614  -614  2008
• Fano-Kondo effect in three quantum dots aiming at charge qubit measurement

  TANAMOTO Tetsufumi; NISHI Yoshifumi; FUJITA Shinobu  Extended abstracts of the ... Conference on Solid State Devices and Materials  2007-  1124  -1125  2007/09
• 24pTH-7 Effect of local structure and non-uniformity on cluster states of charge qubits

  Tanamoto T; Hu X; Liu Y; Nori F  Meeting Abstracts of the Physical Society of Japan  62-  (0)  716  -716  2007
• 20pRC-9 Fano-Kondo effect in charge qubit based on quantum dots

  棚本 哲史; 西 義史  Meeting Abstracts of the Physical Society of Japan  62-  (0)  684  -684  2007
• The effect of side-traps on ballistic transistor in Kondo regime

  TANAMOTO Tetsufumi; UCHIDA Ken; FUJITA Shinobu  Extended abstracts of the ... Conference on Solid State Devices and Materials  2006-  354  -355  2006/09
• Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET

  MATSUMOTO Mari; OHBA Ryuji; YASUDA Shinichi; UCHIDA Ken; TANAMOTO Tetsufumi; FUJITA Shinobu  Extended abstracts of the ... Conference on Solid State Devices and Materials  2006-  280  -281  2006/09
• 超小型乱数発生素子 (特集 イノベーションを支えるナノエレクトロニクス)

  棚本 哲史; 大場 竜二; 藤田 忍  東芝レビュー  61-  (2)  15  -18  2006/02
• 24aXJ-3 Producing cluster states in charge qubits and flux qubits

  Tanamoto T; Fujita S; Hu X; Liu Y; Nori F; Li Yu-Xi  Meeting Abstracts of the Physical Society of Japan  61-  (0)  534  -534  2006
• Ultra Small Random Number Generator for Information Security

  YASUDA Shinichi; TANAMOTO Tetsufumi; OHBA Ryuji; ABE Keiko; NOZAKI Hanae; FUJITA Shinobu  IEICE technical report  105-  (476)  1  -5  2005/12
• 19pWF-2 The Effect of Non-uniformity on Decoherence-Free States for Charge Qubits

  Tanamoto T; Fujita S  Meeting Abstracts of the Physical Society of Japan  60-  (0)  521  -521  2005
• Measurement of Two-Qubit States using a Two-Island Single Electron Transistor

  TANAMOTO Tetsufumi; FUJITA Shinobu; HU Xuedong  Extended abstracts of the ... Conference on Solid State Devices and Materials  2004-  112  -113  2004/09
• Si Nanodevices for Random Number Generating Circuits for Cryptographic Security

  FUJITA Shinobu; UCHIDA Ken; YASUDA Shin-ichi; OHBA Ryuji; NOZAKI Hanae; TANAMOTO Tetsufumi  Technical report of IEICE. ICD  104-  (67)  47  -52  2004/05
• 12pYC-9 The effect of side-coupled quantum dots on the tranport properties of quantum wire

  Tanamoto T; Ohba R; Yasuda S; Abe K; Fujita S  Meeting Abstracts of the Physical Society of Japan  59-  (0)  591  -591  2004
• 29pYA-14 Measurement of Two-Qubit States by a Two-Island Single Electron Transistor

  Tanamoto Tetsufumi  Meeting Abstracts of the Physical Society of Japan  59-  (0)  698  -698  2004
• Single-Electron Devices for Ubiquitous Computing Era

  UCHIDA Ken; TANAMOTO Tetsufumi; KOGA Junji; OHBA Ryuji; YASUDA Shin-ichi; FUJITA Shinobu  IEICE technical report. Electron devices  102-  (638)  1  -6  2003/02
• Single-Electron Devices for Ubiquitous Computing Era

  UCHIDA Ken; TANAMOTO Tetsufumi; KOGA Junji; OHBA Ryuji; YASUDA Shin-ichi; FUJITA Shinobu  Technical report of IEICE. SDM  102-  (640)  1  -6  2003/02
• Measurement of Two-Qubit States on Quantum Point Contacts

  Tanamoto Tetsufumi  Meeting Abstracts of the Physical Society of Japan  58-  (0)  591  -591  2003
• Quantum gate by coupled quantum dots and measurement procedure by field-effects

  Tanamoto Tetsufumi  Meeting Abstracts of the Physical Society of Japan  56-  (0)  89  -89  2001
• 28a-F-12 The Effects of Resonant Tunneling on Magnetoresistance through a Quantum Dot

  Tanamoto Tetsufumi; Fujita Shinobu  Meeting Abstracts of the Physical Society of Japan  54-  (0)  377  -377  1999
• The Possibility of Higher Temperature Operation in Quantum Cellular Automata (QCA)

  TANAMOTO Tetsufumi; KATOH Riichi  IEICE transactions on electronics  79-  (11)  1550  -1556  1996/11
• By View of Neutron Scattering Study, i. e. magnetic Excitation (Is the Electron Pairing in High T_c Superconductors of s- or d- Types?)

  Fukuyama Hidetoshi; Kohno Hiroshi; Tanamoto Tetsufumi  日本物理學會誌  49-  (7)  574  -575  1994/07
• Fundamental Considerations on the Expanded Concept of Quantum Interconnections

  Naruse Yujiro; Katoh Riich; Tanamoto Tetsufumi; Saba Minoru; Takahashi Shigeki; Zohto Yasuhito  IEICE technical report. Electron devices  94-  (22)  15  -22  1994/04
• Fundamental Investigation of Quantum Interconnections with Cellular Architecture

  Katoh Riichi; Tanamoto Tetsufumi; Naruse Yujiro  IEICE technical report. Electron devices  94-  (22)  23  -29  1994/04
• Is the Electron Pairing in High Tc Superconductors of s- or d-Types? By View of Neutron Scattering Study, i.e. magnetic Excitation.

  Fukuyama Hidetoshi; Kohno Hiroshi; Tanamoto Tetsufumi  Butsuri  49-  (7)  574  -575  1994
• 4p-J-1 Improved optical model for resonant tunneling diode II

  ZOHTA Y; TANAMOTO T  Meeting Abstracts of the Physical Society of Japan  1994-  (0)  138  -138  1994
• 4a-J-1 Improved optical model for resonant tunneling diode II

  ZOHTA y; TANAMOTO T  Meeting Abstracts of the Physical Society of Japan  1994-  (0)  343  -343  1994
• IMPROVED OPTICAL-MODEL FOR RESONANT-TUNNELING DIODE

  Y ZOHTA; T TANAMOTO  JOURNAL OF APPLIED PHYSICS  74-  (11)  6996  -6998  1993/12
• SPIN EXCITATIONS OF THE EXTENDED T-J MODEL - NEUTRON-SCATTERING

  T TANAMOTO; H KOHNO; H FUKUYAMA  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN  62-  (5)  1455  -1458  1993/05
• 12a-K-6 Improved optical model for resonant tunneling diode

  ZOHTA Y; TANAMOTO T  Meeting Abstracts of the Physical Society of Japan  1993-  (0)  128  -128  1993
• 12a-K-6 Improved optical model for resonant tunneling diode

  ZOHTA Y; TANAMOTO T  Meeting Abstracts of the Physical Society of Japan  1993-  (0)  1993
• 30p-N-7 Effect of inelastic scattering on the valley current of resonant tunneling diode II

  Zohta Y; Tanamoto T; Nozu T; Tsuda K; Obara M  Meeting Abstracts of the Physical Society of Japan  48-  (0)  153  -153  1993
• 30a-J-11 Magnetic Excitation of Extended t-J Model : II

  Tanamoto T; Kohno H; Fukuyama H  Meeting Abstracts of the Physical Society of Japan  48-  (0)  258  -258  1993
• 30p-PSA-10 Neutron Scattering in the t-J Model II

  Tanamoto T; Kohno H; Fukuyama H  Meeting Abstracts of the Physical Society of Japan  48-  (0)  292  -292  1993
• FERMI-SURFACE AND SPIN FLUCTUATIONS IN EXTENDED T-J MODEL

  T TANAMOTO; H KOHNO; H FUKUYAMA  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN  61-  (6)  1886  -1890  1992/06
• 26a-ZG-8 Effect of inelastic scattering on the valley current of resonant tunneling diode

  Zohta Y; Tanamoto T; Nozu T; Tsuda K; Obara M  Meeting Abstracts of the Physical Society of Japan  1992-  (0)  129  -129  1992
• 26a-R-2 Magnetic Excitations in the Extended t-J Model

  TANAMOTO Tetsufumi; KOHNO Hiroshi; FUKUYAMA Hidetoshi  Meeting Abstracts of the Physical Society of Japan  1992-  (0)  293  -293  1992
• 26p-PSB-2 Magnetic Spectrum in the t-J Model

  Kohno H; Tanamoto T; Fujuyama H  Meeting Abstracts of the Physical Society of Japan  1992-  (0)  325  -325  1992
• 25p-Y-2 Gauge Fields and Spin Excitatios

  Kuboki K; Tanamoto T; Fukuyama H  Meeting Abstracts of the Physical Society of Japan  1991-  (0)  166  -166  1991
• 29p-ZC-1 Magnetic Properties of t-J Model

  Fukuyama H; Kuboki K; Tanamoto T  Meeting Abstracts of the Physical Society of Japan  46-  (0)  174  -174  1991
• Spin Liquid in a Orthorhombic Systems

  Tanamoto T; Fukuyama H  Meeting Abstracts of the Physical Society of Japan  1990-  (0)  385  -385  1990

Research Grants & Projects

• Generation and extraction of device fingerprints (quantum fingerprints) based on physics of spin qubits

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2022/04 -2026/03 

  Author : 棚本 哲史; 大野 圭司; 平本 俊郎